Diodes - Bridge Rectifiers Microsemi Corporation | Diodes

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Found: 177

APTDF100H120G

BRIDGE RECT 1P 1.2KV 120A SP4

Microsemi Corporation
- Manufacturer: Microsemi Corporation
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 175°C (TJ)
- Package / Case: SP4
- Supplier Device Package: SP4
- Diode Type: Single Phase
- Current - Average Rectified (Io): 120A
- Voltage - Forward (Vf) (Max) @ If: 3V @ 100A
- Current - Reverse Leakage @ Vr: 100µA @ 1200V
- Technology: Standard
- Voltage - Peak Reverse (Max): 1.2kV
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MSDM100-18

BRIDGE RECT 3P 1.8KV 100A M2-1

Microsemi Corporation
- Manufacturer: Microsemi Corporation
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: Module
- Supplier Device Package: M2-1
- Diode Type: Three Phase
- Current - Average Rectified (Io): 100A
- Voltage - Forward (Vf) (Max) @ If: 1.9V @ 300A
- Current - Reverse Leakage @ Vr: 500µA @ 1800V
- Technology: Standard
- Voltage - Peak Reverse (Max): 1.8kV
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MSD100-08

BRIDGE RECT 3PHASE 800V 100A M3

Microsemi Corporation
- Manufacturer: Microsemi Corporation
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: SM3-20H
- Supplier Device Package: M3
- Diode Type: Three Phase
- Current - Average Rectified (Io): 100A
- Voltage - Forward (Vf) (Max) @ If: 1.9V @ 300A
- Current - Reverse Leakage @ Vr: 300µA @ 800V
- Technology: Standard
- Voltage - Peak Reverse (Max): 800V
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APTDF100H20G

BRIDGE RECT 1PHASE 200V 145A SP4

Microsemi Corporation
- Manufacturer: Microsemi Corporation
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: SP4
- Supplier Device Package: SP4
- Diode Type: Single Phase
- Current - Average Rectified (Io): 145A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100A
- Current - Reverse Leakage @ Vr: 250µA @ 200V
- Technology: Standard
- Voltage - Peak Reverse (Max): 200V
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APTDF100H60G

BRIDGE RECT 1PHASE 600V 135A SP4

Microsemi Corporation
- Manufacturer: Microsemi Corporation
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 175°C (TJ)
- Package / Case: SP4
- Supplier Device Package: SP4
- Diode Type: Single Phase
- Current - Average Rectified (Io): 135A
- Voltage - Forward (Vf) (Max) @ If: 2V @ 100A
- Current - Reverse Leakage @ Vr: 250µA @ 600V
- Technology: Standard
- Voltage - Peak Reverse (Max): 600V
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MT800

BRIDGE RECT 1PHASE 800V 25A

Microsemi Corporation
- Manufacturer: Microsemi Corporation
- Mounting Type: Chassis Mount
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: Module
- Diode Type: Single Phase
- Current - Average Rectified (Io): 25A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 25A
- Current - Reverse Leakage @ Vr: 10µA @ 800V
- Technology: Standard
- Voltage - Peak Reverse (Max): 800V
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APT40DC60HJ

BRIDGE RECT 1P 600V 40A SOT227

Microsemi Corporation
- Manufacturer: Microsemi Corporation
- Mounting Type: Chassis Mount
- Operating Temperature: -55°C ~ 175°C (TJ)
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
- Diode Type: Single Phase
- Current - Average Rectified (Io): 40A
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 40A
- Current - Reverse Leakage @ Vr: 800µA @ 600V
- Technology: Silicon Carbide Schottky
- Voltage - Peak Reverse (Max): 600V
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681-3D, 3N, 3P

BRIDGE RECTIFIER

Microsemi Corporation
- Manufacturer: Microsemi Corporation
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APT30DS20HJ

BRIDGE RECT 1P 200V 45A SOT227

Microsemi Corporation
- Manufacturer: Microsemi Corporation
- Mounting Type: Chassis Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
- Diode Type: Single Phase
- Current - Average Rectified (Io): 45A
- Voltage - Forward (Vf) (Max) @ If: 850mV @ 30A
- Current - Reverse Leakage @ Vr: 500µA @ 200V
- Technology: Standard
- Voltage - Peak Reverse (Max): 200V
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APTDC40H1201G

BRIDGE RECT 1PHASE 1.2KV 40A SP1

Microsemi Corporation
- Manufacturer: Microsemi Corporation
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 175°C (TJ)
- Package / Case: SP1
- Supplier Device Package: SP1
- Diode Type: Single Phase
- Current - Average Rectified (Io): 40A
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 40A
- Current - Reverse Leakage @ Vr: 800µA @ 1200V
- Technology: Silicon Carbide Schottky
- Voltage - Peak Reverse (Max): 1.2kV
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681-6D, 6N, 6P

BRIDGE RECTIFIER

Microsemi Corporation
- Manufacturer: Microsemi Corporation
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APTDF100H1201G

BRIDGE RECT 1P 1.2KV 120A SP1

Microsemi Corporation
- Manufacturer: Microsemi Corporation
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 175°C (TJ)
- Package / Case: SP1
- Supplier Device Package: SP1
- Diode Type: Single Phase
- Current - Average Rectified (Io): 120A
- Voltage - Forward (Vf) (Max) @ If: 3V @ 100A
- Current - Reverse Leakage @ Vr: 100µA @ 1200V
- Technology: Standard
- Voltage - Peak Reverse (Max): 1.2kV
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682-3

BRIDGE RECTIFIER

Microsemi Corporation
- Manufacturer: Microsemi Corporation
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APTDF100H100G

BRIDGE RECT 1PHASE 1KV 130A SP4

Microsemi Corporation
- Manufacturer: Microsemi Corporation
- Mounting Type: Chassis Mount
- Operating Temperature: -40°C ~ 175°C (TJ)
- Package / Case: SP4
- Supplier Device Package: SP4
- Diode Type: Single Phase
- Current - Average Rectified (Io): 130A
- Voltage - Forward (Vf) (Max) @ If: 2.7V @ 100A
- Current - Reverse Leakage @ Vr: 100µA @ 1000V
- Technology: Standard
- Voltage - Peak Reverse (Max): 1kV
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MSD30-18

BRIDGE RECT 3PHASE 1.8KV 30A

Microsemi Corporation
- Manufacturer: Microsemi Corporation
- Mounting Type: QC Terminal
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: M1
- Diode Type: Three Phase
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 1.6V @ 100A
- Current - Reverse Leakage @ Vr: 200µA @ 1800V
- Technology: Standard
- Voltage - Peak Reverse (Max): 1.8kV
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