• Рабочая температура
    • Ток утечки
    • Прямое напряжение
    • Серия
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Списком Таблицей
Найдено: 14
Наименование Описание Производитель
Package / Case
Обратное пиковое напряжение
Средний выпрямленный ток (Io)
Тип диода
Вид монтажа
Тип корпуса
Технология
Рабочая температура
Ток утечки
Прямое напряжение
W02M BRIDGE RECT 1PHASE 200V 1.5A WOM GeneSiC Semiconductor 4-Circular, WOM 200V 1.5A Single Phase Through Hole WOM Standard -65°C ~ 125°C (TJ) 10µA @ 200V 1V @ 1A
DB154G BRIDGE RECT 1PHASE 400V 1.5A DB GeneSiC Semiconductor 4-EDIP (0.321", 8.15mm) 400V 1.5A Single Phase Through Hole DB Standard -55°C ~ 150°C (TJ) 5µA @ 400V 1.1V @ 1.5A
DB156G BRIDGE RECT 1PHASE 800V 1.5A DB GeneSiC Semiconductor 4-EDIP (0.321", 8.15mm) 800V 1.5A Single Phase Through Hole DB Standard -55°C ~ 150°C (TJ) 5µA @ 800V 1.1V @ 1.5A
DB153G BRIDGE RECT 1PHASE 200V 1.5A DB GeneSiC Semiconductor 4-EDIP (0.321", 8.15mm) 200V 1.5A Single Phase Through Hole DB Standard -55°C ~ 150°C (TJ) 5µA @ 200V 1.1V @ 1.5A
W005M BRIDGE RECT 1PHASE 50V 1.5A WOM GeneSiC Semiconductor 4-Circular, WOM 50V 1.5A Single Phase Through Hole WOM Standard -65°C ~ 125°C (TJ) 10µA @ 50V 1V @ 1A
W04M BRIDGE RECT 1PHASE 400V 1.5A WOM GeneSiC Semiconductor 4-Circular, WOM 400V 1.5A Single Phase Through Hole WOM Standard -65°C ~ 125°C (TJ) 10µA @ 400V 1V @ 1A
DB157G BRIDGE RECT 1PHASE 1KV 1.5A DB GeneSiC Semiconductor 4-EDIP (0.321", 8.15mm) 1kV 1.5A Single Phase Through Hole DB Standard -55°C ~ 150°C (TJ) 5µA @ 1000V 1.1V @ 1.5A
W08M BRIDGE RECT 1PHASE 800V 1.5A WOM GeneSiC Semiconductor 4-Circular, WOM 800V 1.5A Single Phase Through Hole WOM Standard -65°C ~ 125°C (TJ) 5µA @ 800V 1V @ 1A
W01M BRIDGE RECT 1PHASE 100V 1.5A WOM GeneSiC Semiconductor 4-Circular, WOM 100V 1.5A Single Phase Through Hole WOM Standard -65°C ~ 125°C (TJ) 10µA @ 100V 1V @ 1A
DB151G BRIDGE RECT 1PHASE 50V 1.5A DB GeneSiC Semiconductor 4-EDIP (0.321", 8.15mm) 50V 1.5A Single Phase Through Hole DB Standard -55°C ~ 150°C (TJ) 5µA @ 50V 1.1V @ 1.5A
DB152G BRIDGE RECT 1PHASE 100V 1.5A DB GeneSiC Semiconductor 4-EDIP (0.321", 8.15mm) 100V 1.5A Single Phase Through Hole DB Standard -55°C ~ 150°C (TJ) 5µA @ 100V 1.1V @ 1.5A
DB155G BRIDGE RECT 1PHASE 600V 1.5A DB GeneSiC Semiconductor 4-EDIP (0.321", 8.15mm) 600V 1.5A Single Phase Through Hole DB Standard -55°C ~ 150°C (TJ) 5µA @ 600V 1.1V @ 1.5A
W06M BRIDGE RECT 1PHASE 600V 1.5A WOM GeneSiC Semiconductor 4-Circular, WOM 600V 1.5A Single Phase Through Hole WOM Standard -65°C ~ 125°C (TJ) 10µA @ 600V 1V @ 1A
W10M BRIDGE RECT 1PHASE 1KV 1.5A WOM GeneSiC Semiconductor 4-Circular, WOM 1kV 1.5A Single Phase Through Hole WOM Standard -65°C ~ 125°C (TJ) 10µA @ 1000V 1V @ 1A
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