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- Рабочая температура
- Ток утечки
- Прямое напряжение
- Серия
| Наименование | Описание | Производитель
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Package / Case
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Обратное пиковое напряжение
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Средний выпрямленный ток (Io)
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Тип диода
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Вид монтажа
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Тип корпуса
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Технология
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Рабочая температура
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Ток утечки
|
Прямое напряжение
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GBU8G | BRIDGE RECTIFIER DIODE, 1 PHASE, | Fairchild Semiconductor | 4-ESIP, GBU | 400V | 5.6A | Single Phase | Through Hole | GBU | Standard | -50°C ~ 150°C (TJ) | 5µA @ 400V | 1V @ 8A |
| GBU6J | BRIDGE RECTIFIER DIODE, 1 PHASE, | Fairchild Semiconductor | 4-ESIP, GBU | 600V | 4.2A | Single Phase | Through Hole | GBU | Standard | -50°C ~ 150°C (TJ) | 5µA @ 600V | 1V @ 6A |
| GBU8KS | BRIDGE RECTIFIER DIODE | Fairchild Semiconductor | 4-SIP, GBU | 800V | 8A | Single Phase | Through Hole | GBU | Standard | -55°C ~ 150°C (TJ) | 5µA @ 800V | 1V @ 8A |
| GBU8J | BRIDGE RECTIFIER DIODE, 1 PHASE, | Fairchild Semiconductor | 4-ESIP, GBU | 600V | 5.6A | Single Phase | Through Hole | GBU | Standard | -50°C ~ 150°C (TJ) | 5µA @ 600V | 1V @ 8A |
| GBU4K | BRIDGE RECTIFIER DIODE, 1 PHASE, | Fairchild Semiconductor | 4-SIP, GBU | 800V | 2.8A | Single Phase | Through Hole | GBU | Standard | -50°C ~ 150°C (TJ) | 5µA @ 800V | 1.1V @ 4A |
| GBU4J | BRIDGE RECTIFIER DIODE, 1 PHASE, | Fairchild Semiconductor | 4-ESIP, GBU | 600V | 2.8A | Single Phase | Through Hole | GBU | Standard | -50°C ~ 150°C (TJ) | 5µA @ 600V | 1V @ 4A |
| GBU8K | BRIDGE RECTIFIER DIODE, 1 PHASE, | Fairchild Semiconductor | 4-ESIP, GBU | 800V | 5.6A | Single Phase | Through Hole | GBU | Standard | -50°C ~ 150°C (TJ) | 5µA @ 800V | 1V @ 8A |
| GBU6K | BRIDGE RECTIFIER DIODE, 1 PHASE, | Fairchild Semiconductor | 4-ESIP, GBU | 800V | 4.2A | Single Phase | Through Hole | GBU | Standard | -50°C ~ 150°C (TJ) | 5µA @ 800V | 1V @ 6A |
- 10
- 15
- 50
- 100