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- Рабочая температура
- Ток утечки
- Прямое напряжение
- Серия
| Наименование | Описание | Производитель
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Package / Case
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Обратное пиковое напряжение
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Средний выпрямленный ток (Io)
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Тип диода
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Вид монтажа
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Тип корпуса
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Технология
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Рабочая температура
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Ток утечки
|
Прямое напряжение
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|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MB6M-G | BRIDGE RECT 1P 600V 800MA MBM | Comchip Technology | 4-DIP (0.200", 5.08mm) | 600V | 800mA | Single Phase | Through Hole | MBM | Standard | -55°C ~ 150°C (TJ) | 5µA @ 600V | 1.1V @ 800mA |
| MB8M-G | BRIDGE DIODE GPP 0.8A 800V MPM | Comchip Technology | 4-DIP (0.200", 5.08mm) | 800V | 800mA | Single Phase | Through Hole | MBM | Standard | -55°C ~ 150°C (TJ) | 5µA @ 800V | 1.1V @ 800mA |
| MB10M-G | BRIDGE RECT 1PHASE 1KV 800MA MBM | Comchip Technology | 4-DIP (0.200", 5.08mm) | 1kV | 800mA | Single Phase | Through Hole | MBM | Standard | -55°C ~ 150°C (TJ) | 5µA @ 1000V | 1.1V @ 800mA |
| MB1M-G | BRIDGE DIODE GPP 0.8A 100V MBM | Comchip Technology | 4-DIP (0.200", 5.08mm) | 100V | 800mA | Single Phase | Through Hole | MBM | Standard | -55°C ~ 150°C (TJ) | 5µA @ 100V | 1.1V @ 800mA |
| MB2M-G | BRIDGE DIODE GPP 0.8A 200V MBM | Comchip Technology | 4-DIP (0.200", 5.08mm) | 200V | 800mA | Single Phase | Through Hole | MBM | Standard | -55°C ~ 150°C (TJ) | 5µA @ 200V | 1.1V @ 800mA |
| MB4M-G | BRIDGE RECT 1P 400V 800MA MBM | Comchip Technology | 4-DIP (0.200", 5.08mm) | 400V | 800mA | Single Phase | Through Hole | MBM | Standard | -55°C ~ 150°C (TJ) | 5µA @ 400V | 1.1V @ 800mA |
| MB05M-G | BRIDGE RECT 1PHASE 50V 800MA MBM | Comchip Technology | 4-DIP (0.200", 5.08mm) | 50V | 800mA | Single Phase | Through Hole | MBM | Standard | -55°C ~ 150°C (TJ) | 5µA @ 50V | 1.1V @ 800mA |
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