Найдено: 7
Наименование Описание Производитель
Package / Case
Обратное пиковое напряжение
Средний выпрямленный ток (Io)
Тип диода
Вид монтажа
Тип корпуса
Технология
Рабочая температура
Ток утечки
Прямое напряжение
KBL410-G BRIDGE RECT 1PHASE 1KV 4A KBL Comchip Technology 4-SIP, KBL 1kV 4A Single Phase Through Hole KBL Standard -55°C ~ 150°C (TJ) 10µA @ 1000V 1.1V @ 4A
KBL406-G BRIDGE RECT 1PHASE 600V 4A KBL Comchip Technology 4-SIP, KBL 600V 4A Single Phase Through Hole KBL Standard -55°C ~ 150°C (TJ) 10µA @ 600V 1.1V @ 4A
KBL4005-G BRIDGE RECT 1PHASE 50V 4A KBL Comchip Technology 4-SIP, KBL 50V 4A Single Phase Through Hole KBL Standard -55°C ~ 150°C (TJ) 10µA @ 50V 1.1V @ 4A
KBL402-G BRIDGE RECT 1PHASE 200V 4A KBL Comchip Technology 4-SIP, KBL 200V 4A Single Phase Through Hole KBL Standard -55°C ~ 150°C (TJ) 10µA @ 200V 1.1V @ 4A
KBL408-G BRIDGE RECT 1PHASE 800V 4A KBL Comchip Technology 4-SIP, KBL 800V 4A Single Phase Through Hole KBL Standard -55°C ~ 150°C (TJ) 10µA @ 800V 1.1V @ 4A
KBL401-G BRIDGE RECT 1PHASE 100V 4A KBL Comchip Technology 4-SIP, KBL 100V 4A Single Phase Through Hole KBL Standard -55°C ~ 150°C (TJ) 10µA @ 100V 1.1V @ 4A
KBL404-G BRIDGE RECT 1PHASE 400V 4A KBL Comchip Technology 4-SIP, KBL 400V 4A Single Phase Through Hole KBL Standard -55°C ~ 150°C (TJ) 10µA @ 400V 1.1V @ 4A