• Рабочая температура
    • Ток утечки
    • Прямое напряжение
    • Серия
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Списком Таблицей
Найдено: 7
Наименование Описание Производитель
Package / Case
Обратное пиковое напряжение
Средний выпрямленный ток (Io)
Тип диода
Вид монтажа
Тип корпуса
Технология
Рабочая температура
Ток утечки
Прямое напряжение
DB104-G BRIDGE RECT 1PHASE 400V 1A DB Comchip Technology 4-EDIP (0.321", 8.15mm) 400V 1A Single Phase Through Hole DB Standard -55°C ~ 150°C (TJ) 10µA @ 400V 1.1V @ 1A
DB102-G BRIDGE RECT 1PHASE 100V 1A DB Comchip Technology 4-EDIP (0.321", 8.15mm) 100V 1A Single Phase Through Hole DB Standard -55°C ~ 150°C (TJ) 10µA @ 100V 1.1V @ 1A
DB103-G BRIDGE RECT 1PHASE 200V 1A DB Comchip Technology 4-EDIP (0.321", 8.15mm) 200V 1A Single Phase Through Hole DB Standard -55°C ~ 150°C (TJ) 10µA @ 200V 1.1V @ 1A
DB105-G BRIDGE RECT 1PHASE 600V 1A DB Comchip Technology 4-EDIP (0.321", 8.15mm) 600V 1A Single Phase Through Hole DB Standard -55°C ~ 150°C (TJ) 10µA @ 600V 1.1V @ 1A
DB101-G BRIDGE RECT 1PHASE 50V 1A DB Comchip Technology 4-EDIP (0.321", 8.15mm) 50V 1A Single Phase Through Hole DB Standard -55°C ~ 150°C (TJ) 10µA @ 50V 1.1V @ 1A
DB107-G BRIDGE RECT 1PHASE 1KV 1A DB Comchip Technology 4-EDIP (0.321", 8.15mm) 1kV 1A Single Phase Through Hole DB Standard -55°C ~ 150°C (TJ) 10µA @ 1000V 1.1V @ 1A
DB106-G BRIDGE RECT 1PHASE 800V 1A DB Comchip Technology 4-EDIP (0.321", 8.15mm) 800V 1A Single Phase Through Hole DB Standard -55°C ~ 150°C (TJ) 10µA @ 800V 1.1V @ 1A
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