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- Конфигурация
- Технология
- Рабочая температура
- Скорость
- Мощность - Макс.
- Напряжение стабилизации
- Имеданс (Макс) (Zzt)
- Ток утечки
- Ток, макс.
- Емкость @ Vr, F
- Прямое напряжение
- Рассеиваемая мощность (Макс)
- Сопротивление @ If, F
- Коэфициент емкости
- Обратное постоянное напряжение (Vr) (Max)
- Время обратного восстановления (trr)
- Рабочая температура перехода
- Конфигурация диода
- Параметры коэфициента емкости
- Добротность @ Vr, F
- Средний выпрямленный ток (Io) на диод
- Серия
| Наименование | Описание | Производитель
|
Package / Case
|
Средний выпрямленный ток (Io)
|
Тип диода
|
Вид монтажа
|
Тип корпуса
|
Скорость
|
Ток утечки
|
Емкость @ Vr, F
|
Прямое напряжение
|
Обратное постоянное напряжение (Vr) (Max)
|
Время обратного восстановления (trr)
|
Рабочая температура перехода
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1N6628 | DIODE GEN PURP 600V 1.75A AXIAL | Microchip Technology | A, Axial | 1.75A | Standard | Through Hole | A-PAK | Fast Recovery =< 500ns, > 200mA (Io) | 2µA @ 600V | 1.35V @ 2A | 600V | 45ns | -65°C ~ 150°C | ||
| JANTXV1N6623/TR | RECTIFIER UFR,FRR | Microchip Technology | A, Axial | 1A | Standard | Through Hole | A-PAK | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 880V | 1.55V @ 1A | 880V | 50ns | -65°C ~ 150°C | Military, MIL-PRF-19500/585 | |
| JANTXV1N6623 | DIODE GEN PURP 880V 1A D5A | Microchip Technology | A, Axial | 1A | Standard | Through Hole | A-PAK | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 880V | 1.55V @ 1A | 880V | 50ns | -65°C ~ 150°C | Military, MIL-PRF-19500/585 | |
| 1N6622/TR | RECTIFIER UFR,FRR | Microchip Technology | A, Axial | 1.2A | Standard | Through Hole | A-PAK | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 600V | 1.4V @ 1.2A | 600V | 45ns | -65°C ~ 150°C | ||
| JAN1N6075/TR | RECTIFIER UFR,FRR | Microchip Technology | A, Axial | 3A | Standard | Through Hole | A-PAK | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 150V | 2.04V @ 9.4A | 150V | 30ns | -65°C ~ 155°C | Military, MIL-PRF-19500/503 | |
| JANTX1N6075 | DIODE GEN PURP 150V 850MA AXIAL | Microchip Technology | A, Axial | 850mA | Standard | Through Hole | A-PAK | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 150V | 2.04V @ 9.4A | 150V | 30ns | -65°C ~ 155°C | Military, MIL-PRF-19500/503 | |
| JAN1N6074 | DIODE GEN PURP 100V 3A AXIAL | Microchip Technology | A, Axial | 3A | Standard | Through Hole | A-PAK | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 100V | 2.04V @ 9.4A | 100V | 30ns | -65°C ~ 155°C | Military, MIL-PRF-19500/503 | |
| JANTX1N6074 | DIODE GEN PURP 100V 850MA AXIAL | Microchip Technology | A, Axial | 850mA | Standard | Through Hole | A-PAK | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 100V | 2.04V @ 9.4A | 100V | 30ns | -65°C ~ 155°C | Military, MIL-PRF-19500/503 | |
| JAN1N6623/TR | RECTIFIER UFR,FRR | Microchip Technology | A, Axial | 1A | Standard | Through Hole | A-PAK | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 800V | 1.55V @ 1A | 800V | 30ns | -65°C ~ 150°C | Military, MIL-PRF-19500/585 | |
| JANTX1N6081/TR | RECTIFIER UFR,FRR | Microchip Technology | A, Axial | 2A | Standard | Through Hole | A-PAK | Fast Recovery =< 500ns, > 200mA (Io) | 5µA @ 150V | 1.5V @ 37.7A | 150V | 30ns | -65°C ~ 155°C | Military, MIL-PRF-19500/503 | |
| 1N6622 | DIODE GEN PURP 600V 1.2A AXIAL | Microchip Technology | A, Axial | 1.2A | Standard | Through Hole | A-PAK | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 600V | 1.4V @ 1.2A | 600V | 45ns | -65°C ~ 150°C | ||
| JANTX1N6073 | DIODE GEN PURP 50V 850MA AXIAL | Microchip Technology | A, Axial | 850mA | Standard | Through Hole | A-PAK | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 50V | 2.04V @ 9.4A | 50V | 30ns | -65°C ~ 155°C | Military, MIL-PRF-19500/503 | |
| JANTXV1N6075 | DIODE GEN PURP 150V 850MA AXIAL | Microchip Technology | A, Axial | 850mA | Standard | Through Hole | A-PAK | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 150V | 2.04V @ 9.4A | 150V | 30ns | -65°C ~ 155°C | Military, MIL-PRF-19500/503 | |
| 1N6624 | DIODE GEN PURP 990V 1A A-PAK | Microchip Technology | A, Axial | 1A | Standard | Through Hole | A-PAK | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 900V | 10pF @ 10V, 1MHz | 18V @ 500mA | 990V | 60ns | -65°C ~ 150°C | |
| JANTX1N6076 | DIODE GEN PURP 50V 1.3A AXIAL | Microchip Technology | A, Axial | 1.3A | Standard | Through Hole | A-PAK | Fast Recovery =< 500ns, > 200mA (Io) | 5µA @ 50V | 1.76V @ 18.8A | 50V | 30ns | -65°C ~ 155°C | Military, MIL-PRF-19500/503 |
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