-
- Конфигурация
- Технология
- Рабочая температура
- Скорость
- Мощность - Макс.
- Напряжение стабилизации
- Имеданс (Макс) (Zzt)
- Ток утечки
- Ток, макс.
- Емкость @ Vr, F
- Прямое напряжение
- Рассеиваемая мощность (Макс)
- Сопротивление @ If, F
- Коэфициент емкости
- Обратное постоянное напряжение (Vr) (Max)
- Время обратного восстановления (trr)
- Рабочая температура перехода
- Конфигурация диода
- Параметры коэфициента емкости
- Добротность @ Vr, F
- Средний выпрямленный ток (Io) на диод
- Серия
| Наименование | Описание | Производитель
|
Package / Case
|
Средний выпрямленный ток (Io)
|
Тип диода
|
Вид монтажа
|
Допуск
|
Тип корпуса
|
Рабочая температура
|
Скорость
|
Мощность - Макс.
|
Напряжение стабилизации
|
Имеданс (Макс) (Zzt)
|
Ток утечки
|
Емкость @ Vr, F
|
Прямое напряжение
|
Обратное постоянное напряжение (Vr) (Max)
|
Время обратного восстановления (trr)
|
Рабочая температура перехода
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| UES1102E3/TR | RECTIFIER UFR,FRR | Microchip Technology | Axial | 2.5A | Standard | Through Hole | A, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 2µA @ 100V | 975mV @ 2A | 100V | 25ns | 175°C | |||||||
| JANTXV1N6074/TR | RECTIFIER UFR,FRR | Microchip Technology | A, Axial | 850mA | Standard | Through Hole | A, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 100V | 2.04V @ 9.4A | 100V | 30ns | -65°C ~ 155°C | Military, MIL-PRF-19500/503 | ||||||
| UES1101 | RECTIFIER | Microchip Technology | A, Axial | 2A | Standard | Through Hole | A, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 975mV @ 2A | 50V | 25ns | -55°C ~ 175°C | ||||||||
| UES1103E3/TR | RECTIFIER UFR,FRR | Microchip Technology | Axial | 2.5A | Standard | Through Hole | A, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 2µA @ 150V | 975mV @ 2A | 150V | 25ns | 175°C | |||||||
| JANTXV1N6074 | DIODE GEN PURP 100V 850MA AXIAL | Microchip Technology | A, Axial | 850mA | Standard | Through Hole | A, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 100V | 2.04V @ 9.4A | 100V | 30ns | -65°C ~ 155°C | Military, MIL-PRF-19500/503 | ||||||
| JANS1N5620/TR | RECTIFIER UFR,FRR | Microchip Technology | A, Axial | 1A | Standard | Through Hole | A, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 500µA @ 400V | 1.6V @ 3A | 800V | -65°C ~ 200°C | Military, MIL-PRF-19500/429 | |||||||
| UES1104HR2/TR | RECTIFIER UFR,FRR | Microchip Technology | A, Axial | 2A | Standard | Through Hole | A, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 1.25V @ 1A | 200V | 50ns | |||||||||
| 1N6622E3 | ZENER DIODE | Microchip Technology | A, Axial | Through Hole | A, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 1.6V @ 2A | 30ns | ||||||||||||
| JANS1N5802URS | RECTIFIER DIODE | Microchip Technology | A, Axial | 2A | Standard | Through Hole | A, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 25pF @ 10V, 1MHz | 975mV @ 2.5A | 50V | 25ns | -65°C ~ 175°C | Military, MIL-PRF-19500/477 | ||||||
| 1N5806E3/TR | UFR,FRR | Microchip Technology | A, Axial | 2.5A | Standard | Through Hole | A, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 150V | 25pF @ 10V, 1MHz | 975mV @ 2.5A | 150V | 25ns | -65°C ~ 175°C | ||||||
| 1N5615E3/TR | RECTIFIER UFR,FRR | Microchip Technology | Axial | 1A | Standard | Through Hole | A, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 200V | 45pF @ 12V, 1MHz | 1.6V @ 3A | 200V | 150ns | -65°C ~ 175°C | ||||||
| UES1101SME3/TR | RECTIFIER UFR,FRR | Microchip Technology | Axial | 2.5A | Standard | Through Hole | A, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 2µA @ 50V | 975mV @ 2A | 50V | 25ns | 175°C | |||||||
| JAN1N5616/TR | STD RECTIFIER | Microchip Technology | A, Axial | 1A | Standard | Through Hole | A, Axial | Standard Recovery >500ns, > 200mA (Io) | 500nA @ 400V | 1.3V @ 3A | 400V | 2µs | -65°C ~ 200°C | Military, MIL-PRF-19500/427 | ||||||
| JANS1N5622 | RECTIFIER DIODE | Microchip Technology | A, Axial | 1A | Standard | Through Hole | A, Axial | Standard Recovery >500ns, > 200mA (Io) | 500nA @ 1000V | 1.3V @ 3A | 2µs | -65°C ~ 200°C | Military, MIL-PRF-19500/427 | |||||||
| JANS1N5619 | RECTIFIER DIODE | Microchip Technology | A, Axial | 1A | Standard | Through Hole | A, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 1.6V @ 3A | 600V | 250ns | -65°C ~ 200°C | Military, MIL-PRF-19500/429 |
- 10
- 15
- 50
- 100