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- Конфигурация
- Технология
- Рабочая температура
- Скорость
- Мощность - Макс.
- Напряжение стабилизации
- Имеданс (Макс) (Zzt)
- Ток утечки
- Ток, макс.
- Емкость @ Vr, F
- Прямое напряжение
- Рассеиваемая мощность (Макс)
- Сопротивление @ If, F
- Коэфициент емкости
- Обратное постоянное напряжение (Vr) (Max)
- Время обратного восстановления (trr)
- Рабочая температура перехода
- Конфигурация диода
- Параметры коэфициента емкости
- Добротность @ Vr, F
- Средний выпрямленный ток (Io) на диод
- Серия
| Наименование | Описание | Производитель
|
Package / Case
|
Средний выпрямленный ток (Io)
|
Тип диода
|
Вид монтажа
|
Тип корпуса
|
Скорость
|
Ток утечки
|
Емкость @ Vr, F
|
Прямое напряжение
|
Обратное постоянное напряжение (Vr) (Max)
|
Время обратного восстановления (trr)
|
Рабочая температура перехода
|
Конфигурация диода
|
Средний выпрямленный ток (Io) на диод
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| G3S06530P | SIC SCHOTTKY DIODE 650V 30A 2-PI | Global Power Technology-GPT | TO-247-2 | 95A (DC) | Silicon Carbide Schottky | Through Hole | TO-247AC | No Recovery Time > 500mA (Io) | 50µA @ 650V | 2150pF @ 0V, 1MHz | 1.7V @ 30A | 650V | 0ns | -55°C ~ 175°C | ||
| G3S06510P | SIC SCHOTTKY DIODE 650V 10A 2-PI | Global Power Technology-GPT | TO-247-2 | 32.8A (DC) | Silicon Carbide Schottky | Through Hole | TO-247AC | No Recovery Time > 500mA (Io) | 50µA @ 650V | 690pF @ 0V, 1MHz | 1.7V @ 10A | 650V | 0ns | -55°C ~ 175°C | ||
| G4S06540PT | SIC SCHOTTKY DIODE 650V 40A 2-PI | Global Power Technology-GPT | TO-247-2 | 81.8A (DC) | Silicon Carbide Schottky | Through Hole | TO-247AC | No Recovery Time > 500mA (Io) | 50µA @ 650V | 1860pF @ 0V, 1MHz | 1.7V @ 40A | 650V | 0ns | -55°C ~ 175°C | ||
| G5S12040PP | SIC SCHOTTKY DIODE 1200V 40A 2-P | Global Power Technology-GPT | TO-247-2 | Silicon Carbide Schottky | Through Hole | TO-247AC | No Recovery Time > 500mA (Io) | 100µA @ 1200V | 1.7V @ 40A | 1200V | 0ns | -55°C ~ 175°C | 1 Pair Common Anode | 115A (DC) | ||
| G5S06508PT | SIC SCHOTTKY DIODE 650V 8A 2-PIN | Global Power Technology-GPT | TO-247-2 | 31.2A (DC) | Silicon Carbide Schottky | Through Hole | TO-247AC | No Recovery Time > 500mA (Io) | 50µA @ 650V | 550pF @ 0V, 1MHz | 1.5V @ 8A | 650V | 0ns | -55°C ~ 175°C | ||
| G4S06510PT | SIC SCHOTTKY DIODE 650V 10A 2-PI | Global Power Technology-GPT | TO-247-2 | 31.2A (DC) | Silicon Carbide Schottky | Through Hole | TO-247AC | No Recovery Time > 500mA (Io) | 50µA @ 650V | 550pF @ 0V, 1MHz | 1.7V @ 10A | 650V | 0ns | -55°C ~ 175°C | ||
| G3S12020B | SIC SCHOTTKY DIODE 1200V 20A 3-P | Global Power Technology-GPT | TO-247-2 | Silicon Carbide Schottky | Through Hole | TO-247AC | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 1.7V @ 10A | 1200V | 0ns | -55°C ~ 175°C | 1 Pair Common Cathode | 37A (DC) | ||
| G5S12008PM | SIC SCHOTTKY DIODE 1200V 8A 2-PI | Global Power Technology-GPT | TO-247-2 | 27.9A (DC) | Silicon Carbide Schottky | Through Hole | TO-247AC | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 550pF @ 0V, 1MHz | 1.7V @ 8A | 1200V | 0ns | -55°C ~ 175°C | ||
| G3S06550P | SIC SCHOTTKY DIODE 650V 50A 2-PI | Global Power Technology-GPT | TO-247-2 | 105A (DC) | Silicon Carbide Schottky | Through Hole | TO-247AC | No Recovery Time > 500mA (Io) | 100µA @ 650V | 4400pF @ 0V, 1MHz | 1.7V @ 50A | 650V | 0ns | -55°C ~ 175°C | ||
| G5S12010PM | SIC SCHOTTKY DIODE 1200V 10A 2-P | Global Power Technology-GPT | TO-247-2 | 33A (DC) | Silicon Carbide Schottky | Through Hole | TO-247AC | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 825pF @ 0V, 1MHz | 1.7V @ 10A | 1200V | 0ns | -55°C ~ 175°C | ||
| G3S12015P | SIC SCHOTTKY DIODE 1200V 15A 2-P | Global Power Technology-GPT | TO-247-2 | 42A (DC) | Silicon Carbide Schottky | Through Hole | TO-247AC | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 1379pF @ 0V, 1MHz | 1.7V @ 15A | 1200V | 0ns | -55°C ~ 175°C | ||
| G3S12010P | SIC SCHOTTKY DIODE 1200V 10A 2-P | Global Power Technology-GPT | TO-247-2 | 37A (DC) | Silicon Carbide Schottky | Through Hole | TO-247AC | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 765pF @ 0V, 1MHz | 1.7V @ 110A | 1200V | 0ns | -55°C ~ 175°C | ||
| G4S12010PM | SIC SCHOTTKY DIODE 1200V 10A 2-P | Global Power Technology-GPT | TO-247-2 | 33.2A (DC) | Silicon Carbide Schottky | Through Hole | TO-247AC | No Recovery Time > 500mA (Io) | 30µA @ 1700V | 1200V | 0ns | -55°C ~ 175°C | ||||
| G5S12015PM | SIC SCHOTTKY DIODE 1200V 15A 2-P | Global Power Technology-GPT | TO-247-2 | 55A (DC) | Silicon Carbide Schottky | Through Hole | TO-247AC | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 1370pF @ 0V, 1MHz | 1.7V @ 15A | 1200V | 0ns | -55°C ~ 175°C | ||
| G5S12020PM | SIC SCHOTTKY DIODE 1200V 20A 2-P | Global Power Technology-GPT | TO-247-2 | 62A (DC) | Silicon Carbide Schottky | Through Hole | TO-247AC | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 1320pF @ 0V, 1MHz | 1.7V @ 20A | 1200V | 0ns | -55°C ~ 175°C |
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