- Производитель
- Тип диода
- Тип корпуса
-
- Конфигурация
- Технология
- Рабочая температура
- Скорость
- Мощность - Макс.
- Напряжение стабилизации
- Имеданс (Макс) (Zzt)
- Ток утечки
- Ток, макс.
- Емкость @ Vr, F
- Прямое напряжение
- Рассеиваемая мощность (Макс)
- Сопротивление @ If, F
- Коэфициент емкости
- Обратное постоянное напряжение (Vr) (Max)
- Время обратного восстановления (trr)
- Рабочая температура перехода
- Конфигурация диода
- Параметры коэфициента емкости
- Добротность @ Vr, F
- Средний выпрямленный ток (Io) на диод
- Серия
Наименование | Описание | Производитель
|
Package / Case
|
Средний выпрямленный ток (Io)
|
Тип диода
|
Вид монтажа
|
Тип корпуса
|
Скорость
|
Ток утечки
|
Емкость @ Vr, F
|
Прямое напряжение
|
Обратное постоянное напряжение (Vr) (Max)
|
Время обратного восстановления (trr)
|
Рабочая температура перехода
|
Конфигурация диода
|
Средний выпрямленный ток (Io) на диод
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
G3S06502A | SIC SCHOTTKY DIODE 650V 2A 2-PIN | Global Power Technology Co. Ltd | TO-220-2 | 9A (DC) | Silicon Carbide Schottky | Through Hole | TO-220AC | No Recovery Time > 500mA (Io) | 50µA @ 650V | 123pF @ 0V, 1MHz | 1.7V @ 2A | 650V | 0ns | -55°C ~ 175°C | ||
G4S06508JT | SIC SCHOTTKY DIODE 650V 8A 2-PIN | Global Power Technology Co. Ltd | TO-220-2 Isolated Tab | 23.5A (DC) | Silicon Carbide Schottky | Through Hole | TO-220ISO | No Recovery Time > 500mA (Io) | 50µA @ 650V | 395pF @ 0V, 1MHz | 1.7V @ 8A | 650V | 0ns | -55°C ~ 175°C | ||
G5S12040PP | SIC SCHOTTKY DIODE 1200V 40A 2-P | Global Power Technology Co. Ltd | TO-247-2 | Silicon Carbide Schottky | Through Hole | TO-247AC | No Recovery Time > 500mA (Io) | 100µA @ 1200V | 1.7V @ 40A | 1200V | 0ns | -55°C ~ 175°C | 1 Pair Common Anode | 115A (DC) | ||
G3S06505A | SIC SCHOTTKY DIODE 650V 5A 2-PIN | Global Power Technology Co. Ltd | TO-220-2 | 22.6A (DC) | Silicon Carbide Schottky | Through Hole | TO-220AC | No Recovery Time > 500mA (Io) | 50µA @ 650V | 424pF @ 0V, 1MHz | 1.7V @ 5A | 650V | 0ns | -55°C ~ 175°C | ||
G3S12015A | SIC SCHOTTKY DIODE 1200V 15A 2-P | Global Power Technology Co. Ltd | TO-220-2 | 57A (DC) | Silicon Carbide Schottky | Through Hole | TO-220AC | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 1700pF @ 0V, 1MHz | 1.7V @ 15A | 1200V | 0ns | -55°C ~ 175°C | ||
G3S06512B | SIC SCHOTTKY DIODE 650V 12A 3-PI | Global Power Technology Co. Ltd | TO-247-3 | Silicon Carbide Schottky | Through Hole | TO-247AB | No Recovery Time > 500mA (Io) | 50µA @ 650V | 1.7V @ 6A | 650V | 0ns | -55°C ~ 175°C | 1 Pair Common Cathode | 27A (DC) | ||
G3S12005H | SIC SCHOTTKY DIODE 1200V 5A 2-PI | Global Power Technology Co. Ltd | TO-220-2 Full Pack | 21A (DC) | Silicon Carbide Schottky | Through Hole | TO-220F | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 475pF @ 0V, 1MHz | 1.7V @ 5A | 1200V | 0ns | -55°C ~ 175°C | ||
G5S12016B | SIC SCHOTTKY DIODE 1200V 16A 3-P | Global Power Technology Co. Ltd | TO-247-3 | Silicon Carbide Schottky | Through Hole | TO-247AB | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 1.7V @ 8A | 1200V | 0ns | -55°C ~ 175°C | 1 Pair Common Cathode | 27.9A (DC) | ||
G3S12006B | SIC SCHOTTKY DIODE 1200V 6A 3-PI | Global Power Technology Co. Ltd | TO-247-3 | Silicon Carbide Schottky | Through Hole | TO-247AB | No Recovery Time > 500mA (Io) | 100µA @ 1200V | 1.7V @ 3A | 1200V | 0ns | -55°C ~ 175°C | 1 Pair Common Cathode | 14A (DC) | ||
G5S06508PT | SIC SCHOTTKY DIODE 650V 8A 2-PIN | Global Power Technology Co. Ltd | TO-247-2 | 31.2A (DC) | Silicon Carbide Schottky | Through Hole | TO-247AC | No Recovery Time > 500mA (Io) | 50µA @ 650V | 550pF @ 0V, 1MHz | 1.5V @ 8A | 650V | 0ns | -55°C ~ 175°C | ||
G4S06510HT | SIC SCHOTTKY DIODE 650V 10A 2-PI | Global Power Technology Co. Ltd | TO-220-2 Full Pack | 20A (DC) | Silicon Carbide Schottky | Through Hole | TO-220F | No Recovery Time > 500mA (Io) | 50µA @ 650V | 550pF @ 0V, 1MHz | 1.7V @ 10A | 650V | 0ns | -55°C ~ 175°C | ||
G3S17005C | SIC SCHOTTKY DIODE 1700V 5A 2-PI | Global Power Technology Co. Ltd | TO-252-3, DPak (2 Leads + Tab), SC-63 | 27A (DC) | Silicon Carbide Schottky | Surface Mount | TO-252 | No Recovery Time > 500mA (Io) | 50µA @ 1700V | 780pF @ 0V, 1MHz | 1.7V @ 5A | 1700V | 0ns | -55°C ~ 175°C | ||
G4S06515HT | SIC SCHOTTKY DIODE 650V 15A 2-PI | Global Power Technology Co. Ltd | TO-220-2 Full Pack | 23.8A (DC) | Silicon Carbide Schottky | Through Hole | TO-220F | No Recovery Time > 500mA (Io) | 50µA @ 650V | 645pF @ 0V, 1MHz | 1.7V @ 15A | 650V | 0ns | -55°C ~ 175°C | ||
G3S06508A | SIC SCHOTTKY DIODE 650V 8A 2-PIN | Global Power Technology Co. Ltd | TO-220-2 | 25.5A (DC) | Silicon Carbide Schottky | Through Hole | TO-220AC | No Recovery Time > 500mA (Io) | 50µA @ 650V | 550pF @ 0V, 1MHz | 1.7V @ 8A | 650V | 0ns | -55°C ~ 175°C | ||
G4S06508AT | SIC SCHOTTKY DIODE 650V 8A 2-PIN | Global Power Technology Co. Ltd | TO-220-2 | 24.5A (DC) | Silicon Carbide Schottky | Through Hole | TO-220AC | No Recovery Time > 500mA (Io) | 50µA @ 650V | 395pF @ 0V, 1MHz | 1.7V @ 8A | 650V | 0ns | -55°C ~ 175°C |
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