- Производитель
- Тип диода
- Тип корпуса
-
- Конфигурация
- Технология
- Рабочая температура
- Скорость
- Мощность - Макс.
- Напряжение стабилизации
- Имеданс (Макс) (Zzt)
- Ток утечки
- Ток, макс.
- Емкость @ Vr, F
- Прямое напряжение
- Рассеиваемая мощность (Макс)
- Сопротивление @ If, F
- Коэфициент емкости
- Обратное постоянное напряжение (Vr) (Max)
- Время обратного восстановления (trr)
- Рабочая температура перехода
- Конфигурация диода
- Параметры коэфициента емкости
- Добротность @ Vr, F
- Средний выпрямленный ток (Io) на диод
- Серия
| Наименование | Описание | Производитель
|
Package / Case
|
Средний выпрямленный ток (Io)
|
Тип диода
|
Вид монтажа
|
Тип корпуса
|
Скорость
|
Ток утечки
|
Емкость @ Vr, F
|
Прямое напряжение
|
Обратное постоянное напряжение (Vr) (Max)
|
Время обратного восстановления (trr)
|
Рабочая температура перехода
|
Конфигурация диода
|
Средний выпрямленный ток (Io) на диод
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| G3S06502H | SIC SCHOTTKY DIODE 650V 2A 2-PIN | Global Power Technology Co. Ltd | TO-220-2 Full Pack | 9A (DC) | Silicon Carbide Schottky | Through Hole | TO-220F | No Recovery Time > 500mA (Io) | 50µA @ 650V | 123pF @ 0V, 1MHz | 1.7V @ 2A | 650V | 0ns | -55°C ~ 175°C | ||
| G4S06510QT | SIC SCHOTTKY DIODE 650V 10A DFN8 | Global Power Technology Co. Ltd | 4-PowerTSFN | 44.9A (DC) | Silicon Carbide Schottky | Surface Mount | 4-DFN (8x8) | No Recovery Time > 500mA (Io) | 50µA @ 650V | 550pF @ 0V, 1MHz | 1.7V @ 10A | 650V | 0ns | -55°C ~ 175°C | ||
| G3S12005A | SIC SCHOTTKY DIODE 1200V 5A 2-PI | Global Power Technology Co. Ltd | TO-220-2 | 22A (DC) | Silicon Carbide Schottky | Through Hole | TO-220AC | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 475pF @ 0V, 1MHz | 1.7V @ 5A | 1200V | 0ns | -55°C ~ 175°C | ||
| G3S06510D | SIC SCHOTTKY DIODE 650V 10A 2-PI | Global Power Technology Co. Ltd | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 34A (DC) | Silicon Carbide Schottky | Surface Mount | TO-263 | No Recovery Time > 500mA (Io) | 50µA @ 650V | 690pF @ 0V, 1MHz | 1.7V @ 10A | 650V | 0ns | -55°C ~ 175°C | ||
| G5S12015L | SIC SCHOTTKY DIODE 1200V 15A 3-P | Global Power Technology Co. Ltd | TO-247-3 | 55A (DC) | Silicon Carbide Schottky | Through Hole | TO-247AB | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 1370pF @ 0V, 1MHz | 1.7V @ 15A | 1200V | 0ns | -55°C ~ 175°C | ||
| G3S17005P | SIC SCHOTTKY DIODE 1700V 5A 2-PI | Global Power Technology Co. Ltd | TO-247-2 | 29.5A (DC) | Silicon Carbide Schottky | Through Hole | TO-247AC | No Recovery Time > 500mA (Io) | 50µA @ 1700V | 780pF @ 0V, 1MHz | 1.7V @ 5A | 1700V | 0ns | -55°C ~ 175°C | ||
| G3S12005C | SIC SCHOTTKY DIODE 1200V 5A 2-PI | Global Power Technology Co. Ltd | TO-252-3, DPak (2 Leads + Tab), SC-63 | 34A (DC) | Silicon Carbide Schottky | Surface Mount | TO-252 | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 475pF @ 0V, 1MHz | 1.7V @ 5A | 1200V | 0ns | -55°C ~ 175°C | ||
| G5S12040BM | SIC SCHOTTKY DIODE 1200V 40A 3-P | Global Power Technology Co. Ltd | TO-247-3 | Silicon Carbide Schottky | Through Hole | TO-247AB | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 1.7V @ 20A | 1200V | 0ns | -55°C ~ 175°C | 1 Pair Common Cathode | 62A (DC) | ||
| G4S06540PT | SIC SCHOTTKY DIODE 650V 40A 2-PI | Global Power Technology Co. Ltd | TO-247-2 | 81.8A (DC) | Silicon Carbide Schottky | Through Hole | TO-247AC | No Recovery Time > 500mA (Io) | 50µA @ 650V | 1860pF @ 0V, 1MHz | 1.7V @ 40A | 650V | 0ns | -55°C ~ 175°C | ||
| G3S06506H | SIC SCHOTTKY DIODE 650V 6A 2-PIN | Global Power Technology Co. Ltd | TO-220-2 Full Pack | 15.4A (DC) | Silicon Carbide Schottky | Through Hole | TO-220F | No Recovery Time > 500mA (Io) | 50µA @ 650V | 424pF @ 0V, 1MHz | 1.7V @ 6A | 650V | 0ns | -55°C ~ 175°C | ||
| GAS06520L | SIC SCHOTTKY DIODE 650V 20A 3-PI | Global Power Technology Co. Ltd | TO-247-3 | 66.5A (DC) | Silicon Carbide Schottky | Through Hole | TO-247AB | No Recovery Time > 500mA (Io) | 50µA @ 650V | 1390pF @ 0V, 1MHz | 1.7V @ 20A | 650V | 0ns | -55°C ~ 175°C | ||
| G5S12008H | SIC SCHOTTKY DIODE 1200V 8A 2-PI | Global Power Technology Co. Ltd | TO-220-2 Full Pack | 16A (DC) | Silicon Carbide Schottky | Through Hole | TO-220F | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 550pF @ 0V, 1MHz | 1.7V @ 8A | 1200V | 0ns | -55°C ~ 175°C | ||
| G5S06510DT | SIC SCHOTTKY DIODE 650V 10A 2-PI | Global Power Technology Co. Ltd | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 38A (DC) | Silicon Carbide Schottky | Surface Mount | TO-263 | No Recovery Time > 500mA (Io) | 50µA @ 650V | 645pF @ 0V, 1MHz | 1.5V @ 10A | 650V | 0ns | -55°C ~ 175°C | ||
| G5S12008C | SIC SCHOTTKY DIODE 1200V 8A 2-PI | Global Power Technology Co. Ltd | TO-252-3, DPak (2 Leads + Tab), SC-63 | 28.9A (DC) | Silicon Carbide Schottky | Surface Mount | TO-252 | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 550pF @ 0V, 1MHz | 1.7V @ 8A | 1200V | 0ns | -55°C ~ 175°C | ||
| G3S12004B | SIC SCHOTTKY DIODE 1200V 4A 3-PI | Global Power Technology Co. Ltd | TO-247-3 | Silicon Carbide Schottky | Through Hole | TO-247AB | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 1.7V @ 2A | 1200V | 0ns | -55°C ~ 175°C | 1 Pair Common Cathode | 8.5A (DC) |
- 10
- 15
- 50
- 100