- Производитель
- Тип диода
- Тип корпуса
-
- Конфигурация
- Технология
- Рабочая температура
- Скорость
- Мощность - Макс.
- Напряжение стабилизации
- Имеданс (Макс) (Zzt)
- Ток утечки
- Ток, макс.
- Емкость @ Vr, F
- Прямое напряжение
- Рассеиваемая мощность (Макс)
- Сопротивление @ If, F
- Коэфициент емкости
- Обратное постоянное напряжение (Vr) (Max)
- Время обратного восстановления (trr)
- Рабочая температура перехода
- Конфигурация диода
- Параметры коэфициента емкости
- Добротность @ Vr, F
- Средний выпрямленный ток (Io) на диод
- Серия
| Наименование | Описание | Производитель
|
Package / Case
|
Средний выпрямленный ток (Io)
|
Тип диода
|
Вид монтажа
|
Тип корпуса
|
Скорость
|
Ток утечки
|
Емкость @ Vr, F
|
Прямое напряжение
|
Обратное постоянное напряжение (Vr) (Max)
|
Время обратного восстановления (trr)
|
Рабочая температура перехода
|
Конфигурация диода
|
Средний выпрямленный ток (Io) на диод
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| G3S06520B | SIC SCHOTTKY DIODE 650V 20A 3-PI | Global Power Technology Co. Ltd | TO-247-3 | 40A (DC) | Silicon Carbide Schottky | Through Hole | TO-247AB | No Recovery Time > 500mA (Io) | 50µA @ 650V | 690pF @ 0V, 1MHz | 1.7V @ 10A | 650V | 0ns | -55°C ~ 175°C | ||
| G3S12003H | SIC SCHOTTKY DIODE 1200V 3A 2-PI | Global Power Technology Co. Ltd | TO-220-2 Full Pack | 9A (DC) | Silicon Carbide Schottky | Through Hole | TO-220F | No Recovery Time > 500mA (Io) | 100µA @ 1200V | 260pF @ 0V, 1MHz | 1.7V @ 3A | 1200V | 0ns | -55°C ~ 175°C | ||
| G4S06515QT | SIC SCHOTTKY DIODE 650V 15A DFN8 | Global Power Technology Co. Ltd | 4-PowerTSFN | 53A (DC) | Silicon Carbide Schottky | Surface Mount | 4-DFN (8x8) | No Recovery Time > 500mA (Io) | 50µA @ 650V | 645pF @ 0V, 1MHz | 1.7V @ 15A | 650V | 0ns | -55°C ~ 175°C | ||
| G3S06510P | SIC SCHOTTKY DIODE 650V 10A 2-PI | Global Power Technology Co. Ltd | TO-247-2 | 32.8A (DC) | Silicon Carbide Schottky | Through Hole | TO-247AC | No Recovery Time > 500mA (Io) | 50µA @ 650V | 690pF @ 0V, 1MHz | 1.7V @ 10A | 650V | 0ns | -55°C ~ 175°C | ||
| G3S06006J | SIC SCHOTTKY DIODE 600V 6A 2-PIN | Global Power Technology Co. Ltd | TO-220-2 Isolated Tab | 21.5A (DC) | Silicon Carbide Schottky | Through Hole | TO-220ISO | No Recovery Time > 500mA (Io) | 50µA @ 600V | 424pF @ 0V, 1MHz | 1.7V @ 6A | 600V | 0ns | -55°C ~ 175°C | ||
| G3S06508H | SIC SCHOTTKY DIODE 650V 8A 2-PIN | Global Power Technology Co. Ltd | TO-220-2 Full Pack | 14A (DC) | Silicon Carbide Schottky | Through Hole | TO-220F | No Recovery Time > 500mA (Io) | 50µA @ 650V | 550pF @ 0V, 1MHz | 1.7V @ 8A | 650V | 0ns | -55°C ~ 175°C | ||
| G5S06506AT | SIC SCHOTTKY DIODE 650V 6A 2-PIN | Global Power Technology Co. Ltd | TO-220-2 | 24.5A (DC) | Silicon Carbide Schottky | Through Hole | TO-220AC | No Recovery Time > 500mA (Io) | 50µA @ 650V | 395pF @ 0V, 1MHz | 1.5V @ 6A | 650V | 0ns | -55°C ~ 175°C | ||
| G5S12015A | SIC SCHOTTKY DIODE 1200V 15A 2-P | Global Power Technology Co. Ltd | TO-220-2 | 53A (DC) | Silicon Carbide Schottky | Through Hole | TO-220AC | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 1370pF @ 0V, 1MHz | 1.7V @ 15A | 1200V | 0ns | -55°C ~ 175°C | ||
| G4S06510AT | SIC SCHOTTKY DIODE 650V 10A 2-PI | Global Power Technology Co. Ltd | TO-220-2 | 30.5A (DC) | Silicon Carbide Schottky | Through Hole | TO-220AC | No Recovery Time > 500mA (Io) | 50µA @ 650V | 550pF @ 0V, 1MHz | 1.7V @ 10A | 650V | 0ns | -55°C ~ 175°C | ||
| G4S06515CT | SIC SCHOTTKY DIODE 650V 15A 2-PI | Global Power Technology Co. Ltd | TO-252-3, DPak (2 Leads + Tab), SC-63 | 35.8A (DC) | Silicon Carbide Schottky | Surface Mount | TO-252 | No Recovery Time > 500mA (Io) | 50µA @ 650V | 645pF @ 0V, 1MHz | 1.7V @ 15A | 650V | 0ns | -55°C ~ 175°C | ||
| G3S12015P | SIC SCHOTTKY DIODE 1200V 15A 2-P | Global Power Technology Co. Ltd | TO-247-2 | 42A (DC) | Silicon Carbide Schottky | Through Hole | TO-247AC | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 1379pF @ 0V, 1MHz | 1.7V @ 15A | 1200V | 0ns | -55°C ~ 175°C | ||
| G3S06530A | SIC SCHOTTKY DIODE 650V 30A 2-PI | Global Power Technology Co. Ltd | TO-220-2 | 110A (DC) | Silicon Carbide Schottky | Through Hole | TO-220AC | No Recovery Time > 500mA (Io) | 50µA @ 650V | 2150pF @ 0V, 1MHz | 1.7V @ 30A | 650V | 0ns | -55°C ~ 175°C | ||
| G3S12015H | SIC SCHOTTKY DIODE 1200V 15A 2-P | Global Power Technology Co. Ltd | TO-220-2 Full Pack | 21A (DC) | Silicon Carbide Schottky | Through Hole | TO-220F | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 1700pF @ 0V, 1MHz | 1.7V @ 15A | 1200V | 0ns | -55°C ~ 175°C | ||
| G3S06508J | SIC SCHOTTKY DIODE 650V 8A 2-PIN | Global Power Technology Co. Ltd | TO-220-2 Isolated Tab | 23A (DC) | Silicon Carbide Schottky | Through Hole | TO-220ISO | No Recovery Time > 500mA (Io) | 50µA @ 650V | 550pF @ 0V, 1MHz | 1.7V @ 8A | 650V | 0ns | -55°C ~ 175°C | ||
| G5S06502AT | SIC SCHOTTKY DIODE 650V 2A 2-PIN | Global Power Technology Co. Ltd | TO-220-2 | 9.6A (DC) | Silicon Carbide Schottky | Through Hole | TO-220AC | No Recovery Time > 500mA (Io) | 50µA @ 650V | 124pF @ 0V, 1MHz | 1.5V @ 2A | 650V | 0ns | -55°C ~ 175°C |
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