- Производитель
- Тип диода
- Тип корпуса
-
- Конфигурация
- Технология
- Рабочая температура
- Скорость
- Мощность - Макс.
- Напряжение стабилизации
- Имеданс (Макс) (Zzt)
- Ток утечки
- Ток, макс.
- Емкость @ Vr, F
- Прямое напряжение
- Рассеиваемая мощность (Макс)
- Сопротивление @ If, F
- Коэфициент емкости
- Обратное постоянное напряжение (Vr) (Max)
- Время обратного восстановления (trr)
- Рабочая температура перехода
- Конфигурация диода
- Параметры коэфициента емкости
- Добротность @ Vr, F
- Средний выпрямленный ток (Io) на диод
- Серия
| Наименование | Описание | Производитель
|
Package / Case
|
Средний выпрямленный ток (Io)
|
Тип диода
|
Вид монтажа
|
Тип корпуса
|
Скорость
|
Ток утечки
|
Емкость @ Vr, F
|
Прямое напряжение
|
Обратное постоянное напряжение (Vr) (Max)
|
Время обратного восстановления (trr)
|
Рабочая температура перехода
|
Конфигурация диода
|
Средний выпрямленный ток (Io) на диод
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| G4S06515DT | SIC SCHOTTKY DIODE 650V 15A 2-PI | Global Power Technology Co. Ltd | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 38A (DC) | Silicon Carbide Schottky | Surface Mount | TO-263 | No Recovery Time > 500mA (Io) | 50µA @ 650V | 645pF @ 0V, 1MHz | 1.7V @ 15A | 650V | 0ns | -55°C ~ 175°C | ||
| G3S12040B | SIC SCHOTTKY DIODE 1200V 40A 3-P | Global Power Technology Co. Ltd | TO-247-3 | Silicon Carbide Schottky | Through Hole | TO-247AB | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 1.7V @ 15A | 1200V | 0ns | -55°C ~ 175°C | 1 Pair Common Cathode | 64.5A (DC) | ||
| G4S12010PM | SIC SCHOTTKY DIODE 1200V 10A 2-P | Global Power Technology Co. Ltd | TO-247-2 | 33.2A (DC) | Silicon Carbide Schottky | Through Hole | TO-247AC | No Recovery Time > 500mA (Io) | 1200V | 0ns | -55°C ~ 175°C | |||||
| G3S06506B | SIC SCHOTTKY DIODE 650V 6A 3-PIN | Global Power Technology Co. Ltd | TO-247-3 | Silicon Carbide Schottky | Through Hole | TO-247AB | No Recovery Time > 500mA (Io) | 50µA @ 650V | 1.7V @ 3A | 650V | 0ns | -55°C ~ 175°C | 1 Pair Common Cathode | 14A (DC) | ||
| G3S12030B | SIC SCHOTTKY DIODE 1200V 30A 3-P | Global Power Technology Co. Ltd | TO-247-3 | Silicon Carbide Schottky | Through Hole | TO-247AB | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 1.7V @ 15A | 1200V | 0ns | -55°C ~ 175°C | 1 Pair Common Cathode | 42A (DC) | ||
| G5S12010A | SIC SCHOTTKY DIODE 1200V 10A 2-P | Global Power Technology Co. Ltd | TO-220-2 | 37A (DC) | Silicon Carbide Schottky | Through Hole | TO-220AC | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 825pF @ 0V, 1MHz | 1.7V @ 10A | 1200V | 0ns | -55°C ~ 175°C | ||
| G4S12020BM | SIC SCHOTTKY DIODE 1200V 20A 3-P | Global Power Technology Co. Ltd | TO-247-3 | Silicon Carbide Schottky | Through Hole | TO-247AB | No Recovery Time > 500mA (Io) | 30µA @ 1200V | 1.6V @ 10A | 1200V | 0ns | -55°C ~ 175°C | 1 Pair Common Cathode | 33.2A (DC) | ||
| G5S12008PM | SIC SCHOTTKY DIODE 1200V 8A 2-PI | Global Power Technology Co. Ltd | TO-247-2 | 27.9A (DC) | Silicon Carbide Schottky | Through Hole | TO-247AC | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 550pF @ 0V, 1MHz | 1.7V @ 8A | 1200V | 0ns | -55°C ~ 175°C | ||
| G3S12050P | SIC SCHOTTKY DIODE 1200V 50A 2-P | Global Power Technology Co. Ltd | TO-247-2 | 117A (DC) | Silicon Carbide Schottky | Through Hole | TO-247AC | No Recovery Time > 500mA (Io) | 100µA @ 1200V | 7500pF @ 0V, 1MHz | 1.8V @ 150A | 1200V | 0ns | -55°C ~ 175°C | ||
| G5S12010BM | SIC SCHOTTKY DIODE 1200V 10A 3-P | Global Power Technology Co. Ltd | TO-247-3 | Silicon Carbide Schottky | Through Hole | TO-247AB | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 1.7V @ 5A | 1200V | 0ns | -55°C ~ 175°C | 1 Pair Common Cathode | 19.35A (DC) | ||
| G4S06508DT | SIC SCHOTTKY DIODE 650V 8A 2-PIN | Global Power Technology Co. Ltd | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 24A (DC) | Silicon Carbide Schottky | Surface Mount | TO-263 | No Recovery Time > 500mA (Io) | 50µA @ 650V | 395pF @ 0V, 1MHz | 1.7V @ 8A | 650V | 0ns | -55°C ~ 175°C | ||
| G5S06508AT | SIC SCHOTTKY DIODE 650V 8A 2-PIN | Global Power Technology Co. Ltd | TO-220-2 | 30.5A (DC) | Silicon Carbide Schottky | Through Hole | TO-220AC | No Recovery Time > 500mA (Io) | 50µA @ 650V | 550pF @ 0V, 1MHz | 1.5V @ 8A | 650V | 0ns | -55°C ~ 175°C | ||
| G5S12030BM | SIC SCHOTTKY DIODE 1200V 30A 3-P | Global Power Technology Co. Ltd | TO-247-3 | Silicon Carbide Schottky | Through Hole | TO-247AB | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 1.7V @ 15A | 1200V | 0ns | -55°C ~ 175°C | 1 Pair Common Cathode | 55A (DC) | ||
| G3S06004J | SIC SCHOTTKY DIODE 600V 4A 2-PIN | Global Power Technology Co. Ltd | TO-220-2 Isolated Tab | 11A (DC) | Silicon Carbide Schottky | Through Hole | TO-220ISO | No Recovery Time > 500mA (Io) | 50µA @ 600V | 181pF @ 0V, 1MHz | 1.7V @ 4A | 600V | 0ns | -55°C ~ 175°C | ||
| G4S06510CT | SIC SCHOTTKY DIODE 650V 10A 2-PI | Global Power Technology Co. Ltd | TO-252-3, DPak (2 Leads + Tab), SC-63 | 31A (DC) | Silicon Carbide Schottky | Surface Mount | TO-252 | No Recovery Time > 500mA (Io) | 50µA @ 650V | 550pF @ 0V, 1MHz | 1.7V @ 10A | 650V | 0ns | -55°C ~ 175°C |
- 10
- 15
- 50
- 100