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- Конфигурация
- Технология
- Рабочая температура
- Скорость
- Мощность - Макс.
- Напряжение стабилизации
- Имеданс (Макс) (Zzt)
- Ток утечки
- Ток, макс.
- Емкость @ Vr, F
- Прямое напряжение
- Рассеиваемая мощность (Макс)
- Сопротивление @ If, F
- Коэфициент емкости
- Обратное постоянное напряжение (Vr) (Max)
- Время обратного восстановления (trr)
- Рабочая температура перехода
- Конфигурация диода
- Параметры коэфициента емкости
- Добротность @ Vr, F
- Средний выпрямленный ток (Io) на диод
- Серия
| Наименование | Описание | Производитель
|
Package / Case
|
Тип диода
|
Вид монтажа
|
Тип корпуса
|
Скорость
|
Ток утечки
|
Прямое напряжение
|
Обратное постоянное напряжение (Vr) (Max)
|
Время обратного восстановления (trr)
|
Рабочая температура перехода
|
Конфигурация диода
|
Средний выпрямленный ток (Io) на диод
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MBRTA800100R | DIODE SCHOTTKY 100V 400A 3TOWER | GeneSiC Semiconductor | Three Tower | Schottky | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 100V | 840mV @ 400A | 100V | -55°C ~ 150°C | 1 Pair Common Anode | 400A | |
| MBRTA600100R | DIODE SCHOTTKY 100V 300A 3TOWER | GeneSiC Semiconductor | Three Tower | Schottky | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 100V | 840mV @ 300A | 100V | -55°C ~ 150°C | 1 Pair Common Anode | 300A | |
| MURT20060 | DIODE MODULE 600V 100A 3TOWER | GeneSiC Semiconductor | Three Tower | Standard | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 50V | 1.7V @ 100A | 600V | 160ns | -55°C ~ 150°C | 1 Pair Common Cathode | 100A |
| MBRT20020 | DIODE MODULE 20V 100A 3TOWER | GeneSiC Semiconductor | Three Tower | Schottky | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 20V | 750mV @ 100A | 20V | -55°C ~ 150°C | 1 Pair Common Cathode | 100A | |
| MBRT50060 | DIODE MODULE 60V 250A 3TOWER | GeneSiC Semiconductor | Three Tower | Schottky | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 20V | 800mV @ 250A | 60V | -55°C ~ 150°C | 1 Pair Common Cathode | 250A | |
| MBRT60030RL | DIODE SCHOTTKY 30V 300A 3 TOWER | GeneSiC Semiconductor | Three Tower | Schottky | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 3mA @ 30V | 580mV @ 300A | 30V | -55°C ~ 150°C | 1 Pair Common Anode | 300A | |
| MBRTA40035L | DIODE SCHOTTKY 35V 200A 3TOWER | GeneSiC Semiconductor | Three Tower | Schottky | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 3mA @ 35V | 600mV @ 200A | 35V | -55°C ~ 150°C | 1 Pair Common Cathode | 200A | |
| MSRT10080(A)D | DIODE GEN PURP 800V 100A 3 TOWER | GeneSiC Semiconductor | Three Tower | Standard | Chassis Mount | Three Tower | Standard Recovery >500ns, > 200mA (Io) | 10µA @ 800V | 1.1V @ 100A | 800V | -55°C ~ 150°C | 1 Pair Series Connection | 100A | |
| MBRT200200R | DIODE SCHOTTKY 200V 100A 3 TOWER | GeneSiC Semiconductor | Three Tower | Schottky | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 200V | 920mV @ 100A | 200V | -55°C ~ 150°C | 1 Pair Common Anode | 100A | |
| MSRT150100(A)D | DIODE GEN 1KV 150A 3 TOWER | GeneSiC Semiconductor | Three Tower | Standard | Chassis Mount | Three Tower | Standard Recovery >500ns, > 200mA (Io) | 10µA @ 1000V | 1.1V @ 150A | 1000V | -55°C ~ 150°C | 1 Pair Series Connection | 150A | |
| MBRT30020R | DIODE MODULE 20V 150A 3TOWER | GeneSiC Semiconductor | Three Tower | Schottky | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 20V | 750mV @ 150A | 20V | -55°C ~ 150°C | 1 Pair Common Anode | 150A | |
| MBRTA40045L | DIODE SCHOTTKY 45V 200A 3TOWER | GeneSiC Semiconductor | Three Tower | Schottky | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 5mA @ 45V | 600mV @ 200A | 45V | -55°C ~ 150°C | 1 Pair Common Cathode | 200A | |
| MBRT30035RL | DIODE SCHOTTKY 35V 150A 3 TOWER | GeneSiC Semiconductor | Three Tower | Schottky | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 3mA @ 35V | 600mV @ 150A | 35V | -55°C ~ 150°C | 1 Pair Common Anode | 150A | |
| MURTA40040 | DIODE GEN PURP 400V 200A 3 TOWER | GeneSiC Semiconductor | Three Tower | Standard | Chassis Mount | Three Tower | Standard Recovery >500ns, > 200mA (Io) | 25µA @ 400V | 1.3V @ 200A | 400V | -55°C ~ 150°C | 1 Pair Common Cathode | 200A | |
| MURTA20060R | DIODE GEN PURP 600V 100A 3 TOWER | GeneSiC Semiconductor | Three Tower | Standard | Chassis Mount | Three Tower | Standard Recovery >500ns, > 200mA (Io) | 25µA @ 600V | 1.7V @ 100A | 600V | -55°C ~ 150°C | 1 Pair Common Anode | 100A |
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