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- Конфигурация
- Технология
- Рабочая температура
- Скорость
- Мощность - Макс.
- Напряжение стабилизации
- Имеданс (Макс) (Zzt)
- Ток утечки
- Ток, макс.
- Емкость @ Vr, F
- Прямое напряжение
- Рассеиваемая мощность (Макс)
- Сопротивление @ If, F
- Коэфициент емкости
- Обратное постоянное напряжение (Vr) (Max)
- Время обратного восстановления (trr)
- Рабочая температура перехода
- Конфигурация диода
- Параметры коэфициента емкости
- Добротность @ Vr, F
- Средний выпрямленный ток (Io) на диод
- Серия
| Наименование | Описание | Производитель
|
Package / Case
|
Тип диода
|
Вид монтажа
|
Тип корпуса
|
Скорость
|
Ток утечки
|
Прямое напряжение
|
Обратное постоянное напряжение (Vr) (Max)
|
Время обратного восстановления (trr)
|
Рабочая температура перехода
|
Конфигурация диода
|
Средний выпрямленный ток (Io) на диод
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MBRT600150R | DIODE SCHOTTKY 150V 300A 3 TOWER | GeneSiC Semiconductor | Three Tower | Schottky | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 150V | 880mV @ 300A | 150V | -55°C ~ 150°C | 1 Pair Common Anode | 300A | |
| MBRT50060R | DIODE MODULE 60V 250A 3TOWER | GeneSiC Semiconductor | Three Tower | Schottky | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 20V | 800mV @ 250A | 60V | -55°C ~ 150°C | 1 Pair Common Anode | 250A | |
| MURT20005 | DIODE MODULE 50V 100A 3TOWER | GeneSiC Semiconductor | Three Tower | Standard | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 50V | 1.3V @ 100A | 50V | 75ns | -55°C ~ 150°C | 1 Pair Common Cathode | 100A |
| MBRT40040L | DIODE SCHOTTKY 40V 200A 3 TOWER | GeneSiC Semiconductor | Three Tower | Schottky | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 3mA @ 40V | 600mV @ 200A | 40V | -55°C ~ 150°C | 1 Pair Common Cathode | 200A | |
| MURTA60020R | DIODE MODULE 200V 300A 3TOWER | GeneSiC Semiconductor | Three Tower | Standard | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 50V | 1.3V @ 300A | 200V | 200ns | -55°C ~ 150°C | 1 Pair Common Anode | 300A |
| MBRT200200 | DIODE SCHOTTKY 200V 100A 3 TOWER | GeneSiC Semiconductor | Three Tower | Schottky | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 200V | 920mV @ 100A | 200V | -55°C ~ 150°C | 1 Pair Common Cathode | 100A | |
| MBRT60035L | DIODE SCHOTTKY 35V 300A 3 TOWER | GeneSiC Semiconductor | Three Tower | Schottky | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 3mA @ 35V | 600mV @ 300A | 35V | -55°C ~ 150°C | 1 Pair Common Cathode | 300A | |
| MSRTA40060(A) | DIODE MODULE 600V 400A 3TOWER | GeneSiC Semiconductor | Three Tower | Standard | Chassis Mount | Three Tower | Standard Recovery >500ns, > 200mA (Io) | 25µA @ 600V | 1.2V @ 400A | 600V | -55°C ~ 150°C | 1 Pair Common Cathode | 400A (DC) | |
| MBRT400200 | DIODE SCHOTTKY 200V 200A 3 TOWER | GeneSiC Semiconductor | Three Tower | Schottky | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 200V | 920mV @ 200A | 200V | -55°C ~ 150°C | 1 Pair Common Cathode | 200A | |
| MSRTA50080(A) | DIODE MODULE 800V 500A 3TOWER | GeneSiC Semiconductor | Three Tower | Standard | Chassis Mount | Three Tower | Standard Recovery >500ns, > 200mA (Io) | 25µA @ 600V | 1.2V @ 500A | 800V | -55°C ~ 150°C | 1 Pair Common Cathode | 500A (DC) | |
| MBRT50035R | DIODE MODULE 35V 250A 3TOWER | GeneSiC Semiconductor | Three Tower | Schottky | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 20V | 750mV @ 250A | 35V | -55°C ~ 150°C | 1 Pair Common Anode | 250A | |
| MURTA40040R | DIODE GEN PURP 400V 200A 3 TOWER | GeneSiC Semiconductor | Three Tower | Standard | Chassis Mount | Three Tower | Standard Recovery >500ns, > 200mA (Io) | 25µA @ 400V | 1.3V @ 200A | 400V | -55°C ~ 150°C | 1 Pair Common Anode | 200A | |
| MURT40040R | DIODE MODULE 400V 200A 3TOWER | GeneSiC Semiconductor | Three Tower | Standard, Reverse Polarity | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 50V | 1.35V @ 200A | 400V | 180ns | -55°C ~ 150°C | 1 Pair Common Anode | 200A |
| MBRT20080R | DIODE MODULE 80V 100A 3TOWER | GeneSiC Semiconductor | Three Tower | Schottky | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 20V | 880mV @ 100A | 80V | -55°C ~ 150°C | 1 Pair Common Anode | 100A | |
| MBRTA60080R | DIODE SCHOTTKY 80V 300A 3TOWER | GeneSiC Semiconductor | Three Tower | Schottky | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 80V | 840mV @ 300A | 80V | -55°C ~ 150°C | 1 Pair Common Anode | 300A |
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