-
- Конфигурация
- Технология
- Рабочая температура
- Скорость
- Мощность - Макс.
- Напряжение стабилизации
- Имеданс (Макс) (Zzt)
- Ток утечки
- Ток, макс.
- Емкость @ Vr, F
- Прямое напряжение
- Рассеиваемая мощность (Макс)
- Сопротивление @ If, F
- Коэфициент емкости
- Обратное постоянное напряжение (Vr) (Max)
- Время обратного восстановления (trr)
- Рабочая температура перехода
- Конфигурация диода
- Параметры коэфициента емкости
- Добротность @ Vr, F
- Средний выпрямленный ток (Io) на диод
- Серия
| Наименование | Описание | Производитель
|
Package / Case
|
Тип диода
|
Вид монтажа
|
Тип корпуса
|
Скорость
|
Ток утечки
|
Прямое напряжение
|
Обратное постоянное напряжение (Vr) (Max)
|
Время обратного восстановления (trr)
|
Рабочая температура перехода
|
Конфигурация диода
|
Средний выпрямленный ток (Io) на диод
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MBR2X030A100 | DIODE SCHOTTKY 100V 60A SOT227 | GeneSiC Semiconductor | SOT-227-4, miniBLOC | Schottky | Chassis Mount | SOT-227 | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 100V | 840mV @ 30A | 100V | -40°C ~ 150°C | 2 Independent | 60A | ||
| MBR2X160A080 | DIODE SCHOTTKY 80V 160A SOT227 | GeneSiC Semiconductor | SOT-227-4, miniBLOC | Schottky | Chassis Mount | SOT-227 | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 80V | 840mV @ 160A | 80V | -40°C ~ 150°C | 2 Independent | 160A | ||
| GC2X100MPS06-227 | DIODE MOD SCHOT 650V 209A SOT227 | GeneSiC Semiconductor | SOT-227-4, miniBLOC | Silicon Carbide Schottky | Chassis Mount | SOT-227 | No Recovery Time > 500mA (Io) | 20µA @ 650V | 1.8V @ 50A | 650V | 0ns | -55°C ~ 175°C | 2 Independent | 209A (DC) | SiC Schottky MPS™ |
| MUR2X030A12 | DIODE GEN PURP 1200V 30A SOT227 | GeneSiC Semiconductor | SOT-227-4, miniBLOC | Standard | Chassis Mount | SOT-227 | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 1200V | 2.35V @ 30A | 1200V | 85ns | -65°C ~ 175°C | 2 Independent | 30A | |
| GD2X60MPS06N | 650V 120A SOT-227 SIC SCHOTTKY | GeneSiC Semiconductor | SOT-227-4, miniBLOC | Silicon Carbide Schottky | Chassis Mount | SOT-227 | No Recovery Time > 500mA (Io) | 10µA @ 650V | 1.8V @ 60A | 650V | 0ns | -55°C ~ 175°C | 2 Independent | 70A (DC) | SiC Schottky MPS™ |
| MBR2X050A045 | DIODE SCHOTTKY 45V 50A SOT227 | GeneSiC Semiconductor | SOT-227-4, miniBLOC | Schottky | Chassis Mount | SOT-227 | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 45V | 700mV @ 50A | 45V | -40°C ~ 150°C | 2 Independent | 50A | ||
| MUR2X060A10 | DIODE GEN PURP 1KV 60A SOT227 | GeneSiC Semiconductor | SOT-227-4, miniBLOC | Standard | Chassis Mount | SOT-227 | Standard Recovery >500ns, > 200mA (Io) | 25µA @ 1000V | 2.35V @ 60A | 1000V | -55°C ~ 175°C | 2 Independent | 60A | ||
| GD2X30MPS12N | 1200V 60A SOT-227 SIC SCHOTTKY M | GeneSiC Semiconductor | SOT-227-4, miniBLOC | Silicon Carbide Schottky | Chassis Mount | SOT-227 | No Recovery Time > 500mA (Io) | 1200V | -55°C ~ 175°C | 2 Independent | 52A (DC) | SiC Schottky MPS™ | |||
| MUR2X120A04 | DIODE GEN PURP 400V 120A SOT227 | GeneSiC Semiconductor | SOT-227-4, miniBLOC | Standard | Chassis Mount | SOT-227 | Standard Recovery >500ns, > 200mA (Io) | 25µA @ 400V | 1.3V @ 120A | 400V | -55°C ~ 175°C | 2 Independent | 120A | ||
| MBR2X120A200 | DIODE SCHOTTKY 200V 120A SOT227 | GeneSiC Semiconductor | SOT-227-4, miniBLOC | Schottky | Chassis Mount | SOT-227 | Fast Recovery =< 500ns, > 200mA (Io) | 3mA @ 200V | 920mV @ 120A | 200V | -40°C ~ 150°C | 2 Independent | 120A | ||
| MBR2X050A100 | DIODE SCHOTTKY 100V 50A SOT227 | GeneSiC Semiconductor | SOT-227-4, miniBLOC | Schottky | Chassis Mount | SOT-227 | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 100V | 840mV @ 50A | 100V | -40°C ~ 150°C | 2 Independent | 50A | ||
| MBR2X160A180 | DIODE SCHOTTKY 180V 160A SOT227 | GeneSiC Semiconductor | SOT-227-4, miniBLOC | Schottky | Chassis Mount | SOT-227 | Fast Recovery =< 500ns, > 200mA (Io) | 3mA @ 180V | 920mV @ 160A | 180V | -40°C ~ 150°C | 2 Independent | 160A | ||
| MBR2X100A200 | DIODE SCHOTTKY 200V 100A SOT227 | GeneSiC Semiconductor | SOT-227-4, miniBLOC | Schottky | Chassis Mount | SOT-227 | Fast Recovery =< 500ns, > 200mA (Io) | 3mA @ 200V | 920mV @ 100A | 200V | -40°C ~ 150°C | 2 Independent | 100A | ||
| MBR2X120A180 | DIODE SCHOTTKY 180V 120A SOT227 | GeneSiC Semiconductor | SOT-227-4, miniBLOC | Schottky | Chassis Mount | SOT-227 | Fast Recovery =< 500ns, > 200mA (Io) | 3mA @ 180V | 920mV @ 120A | 180V | -40°C ~ 150°C | 2 Independent | 120A | ||
| MBR2X100A120 | DIODE SCHOTTKY 120V 100A SOT227 | GeneSiC Semiconductor | SOT-227-4, miniBLOC | Schottky | Chassis Mount | SOT-227 | Fast Recovery =< 500ns, > 200mA (Io) | 3mA @ 120V | 880mV @ 100A | 120V | -40°C ~ 150°C | 2 Independent | 100A |
- 10
- 15
- 50
- 100