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- Конфигурация
- Технология
- Рабочая температура
- Скорость
- Мощность - Макс.
- Напряжение стабилизации
- Имеданс (Макс) (Zzt)
- Ток утечки
- Ток, макс.
- Емкость @ Vr, F
- Прямое напряжение
- Рассеиваемая мощность (Макс)
- Сопротивление @ If, F
- Коэфициент емкости
- Обратное постоянное напряжение (Vr) (Max)
- Время обратного восстановления (trr)
- Рабочая температура перехода
- Конфигурация диода
- Параметры коэфициента емкости
- Добротность @ Vr, F
- Средний выпрямленный ток (Io) на диод
- Серия
| Наименование | Описание | Производитель
|
Package / Case
|
Обратное пиковое напряжение
|
Средний выпрямленный ток (Io)
|
Тип диода
|
Вид монтажа
|
Тип корпуса
|
Технология
|
Рабочая температура
|
Ток утечки
|
Прямое напряжение
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GBU15M | BRIDGE RECT 1PHASE 1KV 15A GBU | GeneSiC Semiconductor | 4-SIP, GBU | 1kV | 15A | Single Phase | Through Hole | GBU | Standard | -55°C ~ 150°C (TJ) | 5µA @ 1000V | 1.1V @ 15A |
| GBU8G | BRIDGE RECT 1PHASE 400V 8A GBU | GeneSiC Semiconductor | 4-SIP, GBU | 400V | 8A | Single Phase | Through Hole | GBU | Standard | -55°C ~ 150°C (TJ) | 5µA @ 400V | 1.1V @ 8A |
| GBU10J | BRIDGE RECT 1PHASE 600V 10A GBU | GeneSiC Semiconductor | 4-SIP, GBU | 600V | 10A | Single Phase | Through Hole | GBU | Standard | -55°C ~ 150°C (TJ) | 5µA @ 600V | 1.1V @ 5A |
| GBU8J | BRIDGE RECT 1PHASE 600V 8A GBU | GeneSiC Semiconductor | 4-SIP, GBU | 600V | 8A | Single Phase | Through Hole | GBU | Standard | -55°C ~ 150°C (TJ) | 5µA @ 600V | 1.1V @ 8A |
| GBU8B | BRIDGE RECT 1PHASE 100V 8A GBU | GeneSiC Semiconductor | 4-SIP, GBU | 100V | 8A | Single Phase | Through Hole | GBU | Standard | -55°C ~ 150°C (TJ) | 5µA @ 100V | 1.1V @ 8A |
| GBU10G | BRIDGE RECT 1PHASE 400V 10A GBU | GeneSiC Semiconductor | 4-SIP, GBU | 400V | 10A | Single Phase | Through Hole | GBU | Standard | -55°C ~ 150°C (TJ) | 5µA @ 400V | 1.1V @ 10A |
| GBU6A | BRIDGE RECT 1PHASE 50V 6A GBU | GeneSiC Semiconductor | 4-SIP, GBU | 50V | 6A | Single Phase | Through Hole | GBU | Standard | -55°C ~ 150°C (TJ) | 5µA @ 50V | 1.1V @ 6A |
| GBU6K | BRIDGE RECT 1PHASE 800V 6A GBU | GeneSiC Semiconductor | 4-SIP, GBU | 800V | 6A | Single Phase | Through Hole | GBU | Standard | -55°C ~ 150°C (TJ) | 5µA @ 800V | 1.1V @ 6A |
| GBU6D | BRIDGE RECT 1PHASE 200V 6A GBU | GeneSiC Semiconductor | 4-SIP, GBU | 200V | 6A | Single Phase | Through Hole | GBU | Standard | -55°C ~ 150°C (TJ) | 5µA @ 200V | 1.1V @ 6A |
| GBU10M | BRIDGE RECT 1PHASE 1KV 10A GBU | GeneSiC Semiconductor | 4-SIP, GBU | 1kV | 10A | Single Phase | Through Hole | GBU | Standard | -55°C ~ 150°C (TJ) | 5µA @ 1000V | 1.1V @ 10A |
| GBU10D | BRIDGE RECT 1PHASE 200V 10A GBU | GeneSiC Semiconductor | 4-SIP, GBU | 200V | 10A | Single Phase | Through Hole | GBU | Standard | -55°C ~ 150°C (TJ) | 5µA @ 200V | 1.1V @ 10A |
| GBU4G | BRIDGE RECT 1PHASE 400V 4A GBU | GeneSiC Semiconductor | 4-SIP, GBU | 400V | 4A | Single Phase | Through Hole | GBU | Standard | -55°C ~ 150°C (TJ) | 5µA @ 400V | 1.1V @ 4A |
| GBU4B | BRIDGE RECT 1PHASE 100V 4A GBU | GeneSiC Semiconductor | 4-SIP, GBU | 100V | 4A | Single Phase | Through Hole | GBU | Standard | -55°C ~ 150°C (TJ) | 5µA @ 100V | 1.1V @ 4A |
| GBU6B | BRIDGE RECT 1PHASE 100V 6A GBU | GeneSiC Semiconductor | 4-SIP, GBU | 100V | 6A | Single Phase | Through Hole | GBU | Standard | -55°C ~ 150°C (TJ) | 5µA @ 100V | 1.1V @ 6A |
| GBU8D | BRIDGE RECT 1PHASE 200V 8A GBU | GeneSiC Semiconductor | 4-SIP, GBU | 200V | 8A | Single Phase | Through Hole | GBU | Standard | -55°C ~ 150°C (TJ) | 5µA @ 200V | 1.1V @ 8A |
- 10
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- 50
- 100