-
- Конфигурация
- Технология
- Рабочая температура
- Скорость
- Мощность - Макс.
- Напряжение стабилизации
- Имеданс (Макс) (Zzt)
- Ток утечки
- Ток, макс.
- Емкость @ Vr, F
- Прямое напряжение
- Рассеиваемая мощность (Макс)
- Сопротивление @ If, F
- Коэфициент емкости
- Обратное постоянное напряжение (Vr) (Max)
- Время обратного восстановления (trr)
- Рабочая температура перехода
- Конфигурация диода
- Параметры коэфициента емкости
- Добротность @ Vr, F
- Средний выпрямленный ток (Io) на диод
- Серия
| Наименование | Описание | Производитель
|
Package / Case
|
Обратное пиковое напряжение
|
Средний выпрямленный ток (Io)
|
Тип диода
|
Вид монтажа
|
Тип корпуса
|
Технология
|
Рабочая температура
|
Ток утечки
|
Прямое напряжение
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GBU15A | BRIDGE RECT 1PHASE 50V 15A GBU | GeneSiC Semiconductor | 4-SIP, GBU | 50V | 15A | Single Phase | Through Hole | GBU | Standard | -55°C ~ 150°C (TJ) | 5µA @ 50V | 1.1V @ 15A |
| GBU15D | BRIDGE RECT 1PHASE 200V 15A GBU | GeneSiC Semiconductor | 4-SIP, GBU | 200V | 15A | Single Phase | Through Hole | GBU | Standard | -55°C ~ 150°C (TJ) | 5µA @ 200V | 1.1V @ 15A |
| GBU4D | BRIDGE RECT 1PHASE 200V 4A GBU | GeneSiC Semiconductor | 4-SIP, GBU | 200V | 4A | Single Phase | Through Hole | GBU | Standard | -55°C ~ 150°C (TJ) | 5µA @ 200V | 1.1V @ 4A |
| GBU4M | BRIDGE RECT 1PHASE 1KV 4A GBU | GeneSiC Semiconductor | 4-SIP, GBU | 1kV | 4A | Single Phase | Through Hole | GBU | Standard | -55°C ~ 150°C (TJ) | 5µA @ 1000V | 1.1V @ 4A |
| GBU10K | BRIDGE RECT 1PHASE 800V 10A GBU | GeneSiC Semiconductor | 4-SIP, GBU | 800V | 10A | Single Phase | Through Hole | GBU | Standard | -55°C ~ 150°C (TJ) | 5µA @ 800V | 1.1V @ 10A |
| GBU4A | BRIDGE RECT 1PHASE 50V 4A GBU | GeneSiC Semiconductor | 4-SIP, GBU | 50V | 4A | Single Phase | Through Hole | GBU | Standard | -55°C ~ 150°C (TJ) | 5µA @ 50V | 1.1V @ 4A |
| GBU15J | BRIDGE RECT 1PHASE 600V 15A GBU | GeneSiC Semiconductor | 4-SIP, GBU | 600V | 15A | Single Phase | Through Hole | GBU | Standard | -55°C ~ 150°C (TJ) | 5µA @ 600V | 1.1V @ 15A |
| GBU8M | BRIDGE RECT 1PHASE 1KV 8A GBU | GeneSiC Semiconductor | 4-SIP, GBU | 1kV | 8A | Single Phase | Through Hole | GBU | Standard | -55°C ~ 150°C (TJ) | 5µA @ 1000V | 1.1V @ 8A |
| GBU15G | BRIDGE RECT 1PHASE 400V 15A GBU | GeneSiC Semiconductor | 4-SIP, GBU | 400V | 15A | Single Phase | Through Hole | GBU | Standard | -55°C ~ 150°C (TJ) | 5µA @ 400V | 1.1V @ 15A |
| GBU6J | BRIDGE RECT 1PHASE 600V 6A GBU | GeneSiC Semiconductor | 4-SIP, GBU | 600V | 6A | Single Phase | Through Hole | GBU | Standard | -55°C ~ 150°C (TJ) | 5µA @ 600V | 1.1V @ 6A |
| GBU4K | BRIDGE RECT 1PHASE 800V 4A GBU | GeneSiC Semiconductor | 4-SIP, GBU | 800V | 4A | Single Phase | Through Hole | GBU | Standard | -55°C ~ 150°C (TJ) | 5µA @ 800V | 1.1V @ 4A |
| GBU8A | BRIDGE RECT 1PHASE 50V 8A GBU | GeneSiC Semiconductor | 4-SIP, GBU | 50V | 8A | Single Phase | Through Hole | GBU | Standard | -55°C ~ 150°C (TJ) | 5µA @ 50V | 1.1V @ 8A |
| GBU6G | BRIDGE RECT 1PHASE 400V 6A GBU | GeneSiC Semiconductor | 4-SIP, GBU | 400V | 6A | Single Phase | Through Hole | GBU | Standard | -55°C ~ 150°C (TJ) | 5µA @ 400V | 1.1V @ 6A |
| GBU8K | BRIDGE RECT 1PHASE 800V 8A GBU | GeneSiC Semiconductor | 4-SIP, GBU | 800V | 8A | Single Phase | Through Hole | GBU | Standard | -55°C ~ 150°C (TJ) | 5µA @ 800V | 1.1V @ 8A |
| GBU6M | BRIDGE RECT 1PHASE 1KV 6A GBU | GeneSiC Semiconductor | 4-SIP, GBU | 1kV | 6A | Single Phase | Through Hole | GBU | Standard | -55°C ~ 150°C (TJ) | 5µA @ 1000V | 1.1V @ 6A |
- 10
- 15
- 50
- 100