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- Конфигурация
- Технология
- Рабочая температура
- Скорость
- Мощность - Макс.
- Напряжение стабилизации
- Имеданс (Макс) (Zzt)
- Ток утечки
- Ток, макс.
- Емкость @ Vr, F
- Прямое напряжение
- Рассеиваемая мощность (Макс)
- Сопротивление @ If, F
- Коэфициент емкости
- Обратное постоянное напряжение (Vr) (Max)
- Время обратного восстановления (trr)
- Рабочая температура перехода
- Конфигурация диода
- Параметры коэфициента емкости
- Добротность @ Vr, F
- Средний выпрямленный ток (Io) на диод
- Серия
Наименование | Описание | Производитель
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Package / Case
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Обратное пиковое напряжение
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Средний выпрямленный ток (Io)
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Тип диода
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Вид монтажа
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Тип корпуса
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Технология
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Рабочая температура
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Ток утечки
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Прямое напряжение
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GBPC1510W | BRIDGE RECT 1P 1KV 15A GBPC-W | GeneSiC Semiconductor | 4-Square, GBPC-W | 1kV | 15A | Single Phase | Through Hole | GBPC-W | Standard | -55°C ~ 150°C (TJ) | 5µA @ 1000V | 1.1V @ 7.5A |
GBPC2508W | BRIDGE RECT 1P 800V 25A GBPC-W | GeneSiC Semiconductor | 4-Square, GBPC-W | 800V | 25A | Single Phase | Through Hole | GBPC-W | Standard | -55°C ~ 150°C (TJ) | 5µA @ 800V | 1.1V @ 1.2A |
GBPC5002W | BRIDGE RECT 1P 200V 50A GBPC-W | GeneSiC Semiconductor | 4-Square, GBPC-W | 200V | 50A | Single Phase | Through Hole | GBPC-W | Standard | -55°C ~ 150°C (TJ) | 5µA @ 200V | 1.2V @ 25A |
GBPC3506W | BRIDGE RECT 1P 600V 35A GBPC-W | GeneSiC Semiconductor | 4-Square, GBPC-W | 600V | 35A | Single Phase | Through Hole | GBPC-W | Standard | -55°C ~ 150°C (TJ) | 5µA @ 600V | 1.1V @ 17.5A |
GBPC1508W | BRIDGE RECT 1P 800V 15A GBPC-W | GeneSiC Semiconductor | 4-Square, GBPC-W | 800V | 15A | Single Phase | Through Hole | GBPC-W | Standard | -55°C ~ 150°C (TJ) | 5µA @ 800V | 1.1V @ 7.5A |
GBPC5001W | BRIDGE RECT 1P 100V 50A GBPC-W | GeneSiC Semiconductor | 4-Square, GBPC-W | 100V | 50A | Single Phase | Through Hole | GBPC-W | Standard | -55°C ~ 150°C (TJ) | 5µA @ 100V | 1.2V @ 25A |
GBPC3501W | BRIDGE RECT 1P 100V 35A GBPC-W | GeneSiC Semiconductor | 4-Square, GBPC-W | 100V | 35A | Single Phase | Through Hole | GBPC-W | Standard | -55°C ~ 150°C (TJ) | 5µA @ 100V | 1.1V @ 17.5A |
GBPC5010W | BRIDGE RECT 1P 1KV 50A GBPC-W | GeneSiC Semiconductor | 4-Square, GBPC-W | 1kV | 50A | Single Phase | Through Hole | GBPC-W | Standard | -55°C ~ 150°C (TJ) | 5µA @ 1000V | 1.2V @ 25A |
GBPC25005W | BRIDGE RECT 1P 50V 25A GBPC-W | GeneSiC Semiconductor | 4-Square, GBPC-W | 50V | 25A | Single Phase | Through Hole | GBPC-W | Standard | -55°C ~ 150°C (TJ) | 5µA @ 50V | 1.1V @ 7.5A |
GBPC3504W | BRIDGE RECT 1P 400V 35A GBPC-W | GeneSiC Semiconductor | 4-Square, GBPC-W | 400V | 35A | Single Phase | Through Hole | GBPC-W | Standard | -55°C ~ 150°C (TJ) | 5µA @ 400V | 1.1V @ 17.5A |
GBPC2502W | BRIDGE RECT 1P 200V 25A GBPC-W | GeneSiC Semiconductor | 4-Square, GBPC-W | 200V | 25A | Single Phase | Through Hole | GBPC-W | Standard | -55°C ~ 150°C (TJ) | 5µA @ 200V | 1.1V @ 12.5A |
GBPC1504W | BRIDGE RECT 1P 400V 15A GBPC-W | GeneSiC Semiconductor | 4-Square, GBPC-W | 400V | 15A | Single Phase | Through Hole | GBPC-W | Standard | -55°C ~ 150°C (TJ) | 5µA @ 400V | 1.1V @ 7.5A |
GBPC2510W | BRIDGE RECT 1P 1KV 25A GBPC-W | GeneSiC Semiconductor | 4-Square, GBPC-W | 1kV | 25A | Single Phase | Through Hole | GBPC-W | Standard | -55°C ~ 150°C (TJ) | 5µA @ 1000V | 1.1V @ 12.5A |
GBPC2504W | BRIDGE RECT 1P 400V 25A GBPC-W | GeneSiC Semiconductor | 4-Square, GBPC-W | 400V | 25A | Single Phase | Through Hole | GBPC-W | Standard | -55°C ~ 150°C (TJ) | 5µA @ 400V | 1.1V @ 12.5A |
GBPC3510W | BRIDGE RECT 1P 1KV 35A GBPC-W | GeneSiC Semiconductor | 4-Square, GBPC-W | 1kV | 35A | Single Phase | Through Hole | GBPC-W | Standard | -55°C ~ 150°C (TJ) | 5µA @ 1000V | 1.1V @ 17.5A |
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