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- Конфигурация
- Технология
- Рабочая температура
- Скорость
- Мощность - Макс.
- Напряжение стабилизации
- Имеданс (Макс) (Zzt)
- Ток утечки
- Ток, макс.
- Емкость @ Vr, F
- Прямое напряжение
- Рассеиваемая мощность (Макс)
- Сопротивление @ If, F
- Коэфициент емкости
- Обратное постоянное напряжение (Vr) (Max)
- Время обратного восстановления (trr)
- Рабочая температура перехода
- Конфигурация диода
- Параметры коэфициента емкости
- Добротность @ Vr, F
- Средний выпрямленный ток (Io) на диод
- Серия
Наименование | Описание | Производитель
|
Package / Case
|
Средний выпрямленный ток (Io)
|
Тип диода
|
Вид монтажа
|
Тип корпуса
|
Скорость
|
Ток утечки
|
Прямое напряжение
|
Обратное постоянное напряжение (Vr) (Max)
|
Время обратного восстановления (trr)
|
Рабочая температура перехода
|
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1N3673AR | DIODE GEN PURP REV 1KV 12A DO4 | GeneSiC Semiconductor | DO-203AA, DO-4, Stud | 12A | Standard, Reverse Polarity | Chassis, Stud Mount | DO-4 | Standard Recovery >500ns, > 200mA (Io) | 10µA @ 50V | 1.1V @ 12A | 1000V | -65°C ~ 200°C | |
FR12GR05 | DIODE GEN PURP REV 400V 12A DO4 | GeneSiC Semiconductor | DO-203AA, DO-4, Stud | 12A | Standard, Reverse Polarity | Chassis, Stud Mount | DO-4 | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 100V | 800mV @ 12A | 400V | 500ns | -65°C ~ 150°C |
1N3891R | DIODE GEN PURP REV 200V 12A DO4 | GeneSiC Semiconductor | DO-203AA, DO-4, Stud | 12A | Standard, Reverse Polarity | Chassis, Stud Mount | DO-4 | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 50V | 1.4V @ 12A | 200V | 200ns | -65°C ~ 150°C |
1N3671AR | DIODE GEN PURP REV 800V 12A DO4 | GeneSiC Semiconductor | DO-203AA, DO-4, Stud | 12A | Standard, Reverse Polarity | Chassis, Stud Mount | DO-4 | Standard Recovery >500ns, > 200mA (Io) | 10µA @ 50V | 1.1V @ 12A | 800V | -65°C ~ 200°C | |
S12D | DIODE GEN PURP 200V 12A DO4 | GeneSiC Semiconductor | DO-203AA, DO-4, Stud | 12A | Standard | Chassis, Stud Mount | DO-4 | Standard Recovery >500ns, > 200mA (Io) | 10µA @ 50V | 1.1V @ 12A | 200V | -65°C ~ 175°C | |
GKN26/16 | DIODE GEN PURP 1.6KV 25A DO4 | GeneSiC Semiconductor | DO-203AA, DO-4, Stud | 25A | Standard | Chassis, Stud Mount | DO-4 | Standard Recovery >500ns, > 200mA (Io) | 4mA @ 1600V | 1.55V @ 60A | 1600V | -40°C ~ 180°C | |
FR16M05 | DIODE GEN PURP 1KV 16A DO4 | GeneSiC Semiconductor | DO-203AA, DO-4, Stud | 16A | Standard | Chassis, Stud Mount | DO-4 | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 100V | 1.1V @ 16A | 1000V | 500ns | -65°C ~ 150°C |
FR6B05 | DIODE GEN PURP 100V 16A DO4 | GeneSiC Semiconductor | DO-203AA, DO-4, Stud | 16A | Standard | Chassis, Stud Mount | DO-4 | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 50V | 1.4V @ 6A | 100V | 500ns | -65°C ~ 150°C |
MBR3520R | DIODE SCHOTTKY REV 20V DO4 | GeneSiC Semiconductor | DO-203AA, DO-4, Stud | 35A | Schottky, Reverse Polarity | Chassis, Stud Mount | DO-4 | Fast Recovery =< 500ns, > 200mA (Io) | 1.5mA @ 20V | 680mV @ 35A | 20V | -55°C ~ 150°C | |
S6JR | DIODE GEN PURP REV 600V 6A DO4 | GeneSiC Semiconductor | DO-203AA, DO-4, Stud | 6A | Standard, Reverse Polarity | Chassis, Stud Mount | DO-4 | Standard Recovery >500ns, > 200mA (Io) | 10µA @ 100V | 1.1V @ 6A | 600V | -65°C ~ 175°C | |
FR12KR05 | DIODE GEN PURP REV 800V 12A DO4 | GeneSiC Semiconductor | DO-203AA, DO-4, Stud | 12A | Standard, Reverse Polarity | Chassis, Stud Mount | DO-4 | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 100V | 800mV @ 12A | 800V | 500ns | -65°C ~ 150°C |
FR12G02 | DIODE GEN PURP 400V 12A DO4 | GeneSiC Semiconductor | DO-203AA, DO-4, Stud | 12A | Standard | Chassis, Stud Mount | DO-4 | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 100V | 800mV @ 12A | 400V | 200ns | -65°C ~ 150°C |
1N3892 | DIODE GEN PURP 400V 12A DO4 | GeneSiC Semiconductor | DO-203AA, DO-4, Stud | 12A | Standard | Chassis, Stud Mount | DO-4 | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 50V | 1.4V @ 12A | 400V | 200ns | -65°C ~ 150°C |
1N1200AR | DIODE GEN PURP REV 100V 12A DO4 | GeneSiC Semiconductor | DO-203AA, DO-4, Stud | 12A | Standard, Reverse Polarity | Chassis, Stud Mount | DO-4 | Standard Recovery >500ns, > 200mA (Io) | 10µA @ 50V | 1.1V @ 12A | 100V | -65°C ~ 200°C | |
FR6J02 | DIODE GEN PURP 600V 6A DO4 | GeneSiC Semiconductor | DO-203AA, DO-4, Stud | 6A | Standard | Chassis, Stud Mount | DO-4 | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 50V | 1.4V @ 6A | 600V | 250ns | -65°C ~ 150°C |
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