-
- Конфигурация
- Технология
- Рабочая температура
- Скорость
- Мощность - Макс.
- Напряжение стабилизации
- Имеданс (Макс) (Zzt)
- Ток утечки
- Ток, макс.
- Емкость @ Vr, F
- Прямое напряжение
- Рассеиваемая мощность (Макс)
- Сопротивление @ If, F
- Коэфициент емкости
- Обратное постоянное напряжение (Vr) (Max)
- Время обратного восстановления (trr)
- Рабочая температура перехода
- Конфигурация диода
- Параметры коэфициента емкости
- Добротность @ Vr, F
- Средний выпрямленный ток (Io) на диод
- Серия
| Наименование | Описание | Производитель
|
Package / Case
|
Обратное пиковое напряжение
|
Средний выпрямленный ток (Io)
|
Тип диода
|
Вид монтажа
|
Тип корпуса
|
Технология
|
Рабочая температура
|
Ток утечки
|
Прямое напряжение
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DB102G | BRIDGE RECT 1PHASE 100V 1A DB | GeneSiC Semiconductor | 4-EDIP (0.321", 8.15mm) | 100V | 1A | Single Phase | Through Hole | DB | Standard | -55°C ~ 150°C (TJ) | 10µA @ 100V | 1.1V @ 1A |
| DB154G | BRIDGE RECT 1PHASE 400V 1.5A DB | GeneSiC Semiconductor | 4-EDIP (0.321", 8.15mm) | 400V | 1.5A | Single Phase | Through Hole | DB | Standard | -55°C ~ 150°C (TJ) | 5µA @ 400V | 1.1V @ 1.5A |
| DB156G | BRIDGE RECT 1PHASE 800V 1.5A DB | GeneSiC Semiconductor | 4-EDIP (0.321", 8.15mm) | 800V | 1.5A | Single Phase | Through Hole | DB | Standard | -55°C ~ 150°C (TJ) | 5µA @ 800V | 1.1V @ 1.5A |
| DB153G | BRIDGE RECT 1PHASE 200V 1.5A DB | GeneSiC Semiconductor | 4-EDIP (0.321", 8.15mm) | 200V | 1.5A | Single Phase | Through Hole | DB | Standard | -55°C ~ 150°C (TJ) | 5µA @ 200V | 1.1V @ 1.5A |
| DB106G | BRIDGE RECT 1PHASE 800V 1A DB | GeneSiC Semiconductor | 4-EDIP (0.321", 8.15mm) | 800V | 1A | Single Phase | Through Hole | DB | Standard | -55°C ~ 150°C (TJ) | 10µA @ 800V | 1.1V @ 1A |
| DB104G | BRIDGE RECT 1PHASE 400V 1A DB | GeneSiC Semiconductor | 4-EDIP (0.321", 8.15mm) | 400V | 1A | Single Phase | Through Hole | DB | Standard | -55°C ~ 150°C (TJ) | 10µA @ 400V | 1.1V @ 1A |
| DB157G | BRIDGE RECT 1PHASE 1KV 1.5A DB | GeneSiC Semiconductor | 4-EDIP (0.321", 8.15mm) | 1kV | 1.5A | Single Phase | Through Hole | DB | Standard | -55°C ~ 150°C (TJ) | 5µA @ 1000V | 1.1V @ 1.5A |
| DB107G | BRIDGE RECT 1PHASE 1KV 1A DB | GeneSiC Semiconductor | 4-EDIP (0.321", 8.15mm) | 1kV | 1A | Single Phase | Through Hole | DB | Standard | -55°C ~ 150°C (TJ) | 10µA @ 1000V | 1.1V @ 1A |
| DB151G | BRIDGE RECT 1PHASE 50V 1.5A DB | GeneSiC Semiconductor | 4-EDIP (0.321", 8.15mm) | 50V | 1.5A | Single Phase | Through Hole | DB | Standard | -55°C ~ 150°C (TJ) | 5µA @ 50V | 1.1V @ 1.5A |
| DB152G | BRIDGE RECT 1PHASE 100V 1.5A DB | GeneSiC Semiconductor | 4-EDIP (0.321", 8.15mm) | 100V | 1.5A | Single Phase | Through Hole | DB | Standard | -55°C ~ 150°C (TJ) | 5µA @ 100V | 1.1V @ 1.5A |
| DB155G | BRIDGE RECT 1PHASE 600V 1.5A DB | GeneSiC Semiconductor | 4-EDIP (0.321", 8.15mm) | 600V | 1.5A | Single Phase | Through Hole | DB | Standard | -55°C ~ 150°C (TJ) | 5µA @ 600V | 1.1V @ 1.5A |
| DB105G | BRIDGE RECT 1PHASE 600V 1A DB | GeneSiC Semiconductor | 4-EDIP (0.321", 8.15mm) | 600V | 1A | Single Phase | Through Hole | DB | Standard | -55°C ~ 150°C (TJ) | 10µA @ 600V | 1.1V @ 1A |
| DB101G | BRIDGE RECT 1PHASE 50V 1A DB | GeneSiC Semiconductor | 4-EDIP (0.321", 8.15mm) | 50V | 1A | Single Phase | Through Hole | DB | Standard | -55°C ~ 150°C (TJ) | 5µA @ 50V | 1.1V @ 1A |
| DB103G | BRIDGE RECT 1PHASE 200V 1A DB | GeneSiC Semiconductor | 4-EDIP (0.321", 8.15mm) | 200V | 1A | Single Phase | Through Hole | DB | Standard | -55°C ~ 150°C (TJ) | 10µA @ 200V | 1.1V @ 1A |
- 10
- 15
- 50
- 100