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- Конфигурация
- Технология
- Рабочая температура
- Скорость
- Мощность - Макс.
- Напряжение стабилизации
- Имеданс (Макс) (Zzt)
- Ток утечки
- Ток, макс.
- Емкость @ Vr, F
- Прямое напряжение
- Рассеиваемая мощность (Макс)
- Сопротивление @ If, F
- Коэфициент емкости
- Обратное постоянное напряжение (Vr) (Max)
- Время обратного восстановления (trr)
- Рабочая температура перехода
- Конфигурация диода
- Параметры коэфициента емкости
- Добротность @ Vr, F
- Средний выпрямленный ток (Io) на диод
- Серия
| Наименование | Описание | Производитель
|
Package / Case
|
Средний выпрямленный ток (Io)
|
Тип диода
|
Вид монтажа
|
Тип корпуса
|
Скорость
|
Ток утечки
|
Прямое напряжение
|
Обратное постоянное напряжение (Vr) (Max)
|
Время обратного восстановления (trr)
|
Рабочая температура перехода
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MBRH24060R | DIODE SCHOTTKY 60V 240A D67 | GeneSiC Semiconductor | D-67 | 240A | Schottky | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 60V | 780mV @ 240A | 60V | -55°C ~ 150°C | |
| MBRH20080R | DIODE SCHOTTKY 80V 200A D-67 | GeneSiC Semiconductor | D-67 | 200A | Schottky, Reverse Polarity | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 5mA @ 20V | 840mV @ 200A | 80V | ||
| MURH7040 | DIODE GEN PURP 400V 70A D-67 | GeneSiC Semiconductor | D-67 | 70A | Standard | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 400V | 1.3V @ 70A | 400V | 90ns | -55°C ~ 155°C |
| MBRH20030R | DIODE SCHOTTKY 30V 200A D-67 | GeneSiC Semiconductor | D-67 | 200A | Schottky, Reverse Polarity | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 5mA @ 20V | 650mV @ 200A | 30V | ||
| MURH7020R | DIODE GEN PURP 200V 70A D-67 | GeneSiC Semiconductor | D-67 | 70A | Standard | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 200V | 1V @ 70A | 200V | 75ns | -55°C ~ 150°C |
| MBRH20020R | DIODE SCHOTTKY 20V 200A D-67 | GeneSiC Semiconductor | D-67 | 200A | Schottky, Reverse Polarity | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 5mA @ 20V | 650mV @ 200A | 20V | ||
| MBRH15035RL | DIODE SCHOTTKY 35V 150A D-67 | GeneSiC Semiconductor | D-67 | 150A | Schottky, Reverse Polarity | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 3mA @ 35V | 600mV @ 150A | 35V | ||
| MBRH12030 | DIODE SCHOTTKY 30V 120A D-67 | GeneSiC Semiconductor | D-67 | 120A | Schottky | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 4mA @ 20V | 650mV @ 120A | 30V | ||
| MBRH30020L | DIODE SCHOTTKY 20V 300A D67 | GeneSiC Semiconductor | D-67 | 300A | Schottky | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 3mA @ 20V | 580mV @ 300A | 20V | -55°C ~ 150°C | |
| MBRH20035L | DIODE SCHOTTKY 35V 200A D-67 | GeneSiC Semiconductor | D-67 | 200A | Schottky | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 3mA @ 200V | 600mV @ 200A | 35V | ||
| MBRH200200R | DIODE SCHOTTKY 200V 200A D-67 | GeneSiC Semiconductor | D-67 | 200A | Schottky, Reverse Polarity | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 200V | 920mV @ 200A | 200V | -55°C ~ 150°C | |
| MURH7020 | DIODE GEN PURP 200V 70A D-67 | GeneSiC Semiconductor | D-67 | 70A | Standard | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 200V | 1V @ 70A | 200V | 75ns | -55°C ~ 150°C |
| MBRH24080 | DIODE SCHOTTKY 80V 240A D67 | GeneSiC Semiconductor | D-67 | 240A | Schottky | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 80V | 840mV @ 240A | 80V | -55°C ~ 150°C | |
| MBRH30035L | DIODE SCHOTTKY 35V 300A D67 | GeneSiC Semiconductor | D-67 | 300A | Schottky | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 3mA @ 35V | 600mV @ 300A | 35V | -55°C ~ 150°C | |
| MBRH24060 | DIODE SCHOTTKY 60V 240A D67 | GeneSiC Semiconductor | D-67 | 240A | Schottky | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 60V | 780mV @ 240A | 60V | -55°C ~ 150°C |
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