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- Конфигурация
- Технология
- Рабочая температура
- Скорость
- Мощность - Макс.
- Напряжение стабилизации
- Имеданс (Макс) (Zzt)
- Ток утечки
- Ток, макс.
- Емкость @ Vr, F
- Прямое напряжение
- Рассеиваемая мощность (Макс)
- Сопротивление @ If, F
- Коэфициент емкости
- Обратное постоянное напряжение (Vr) (Max)
- Время обратного восстановления (trr)
- Рабочая температура перехода
- Конфигурация диода
- Параметры коэфициента емкости
- Добротность @ Vr, F
- Средний выпрямленный ток (Io) на диод
- Серия
| Наименование | Описание | Производитель
|
Package / Case
|
Средний выпрямленный ток (Io)
|
Тип диода
|
Вид монтажа
|
Тип корпуса
|
Скорость
|
Ток утечки
|
Прямое напряжение
|
Обратное постоянное напряжение (Vr) (Max)
|
Время обратного восстановления (trr)
|
Рабочая температура перехода
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MURH7010 | DIODE GEN PURP 100V 70A D-67 | GeneSiC Semiconductor | D-67 | 70A | Standard | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 100V | 1V @ 70A | 100V | 75ns | -55°C ~ 150°C |
| MBRH120150 | DIODE SCHOTTKY 150V 120A D-67 | GeneSiC Semiconductor | D-67 | 120A | Schottky | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 150V | 880mV @ 120A | 150V | -55°C ~ 150°C | |
| MBRH240100 | DIODE SCHOTTKY 100V 240A D67 | GeneSiC Semiconductor | D-67 | 240A | Schottky | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 100V | 840mV @ 240A | 100V | -55°C ~ 150°C | |
| MBRH20040 | DIODE SCHOTTKY 40V 200A D-67 | GeneSiC Semiconductor | D-67 | 200A | Schottky | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 5mA @ 20V | 650mV @ 200A | 40V | ||
| MURH10020 | DIODE GEN PURP 200V 100A D-67 | GeneSiC Semiconductor | D-67 | 100A | Standard | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 50V | 1.3V @ 100A | 200V | 75ns | |
| MBRH20020RL | DIODE SCHOTTKY 20V 200A D-67 | GeneSiC Semiconductor | D-67 | 200A | Schottky, Reverse Polarity | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 3mA @ 20V | 580mV @ 200mA | 20V | ||
| MURH10020R | DIODE GEN PURP 200V 100A D-67 | GeneSiC Semiconductor | D-67 | 100A | Standard, Reverse Polarity | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 50V | 1.3V @ 100A | 200V | 75ns | |
| MBRH20045L | DIODE SCHOTTKY 45V 200A D-67 | GeneSiC Semiconductor | D-67 | 200A | Schottky | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 5mA @ 45V | 600mV @ 200A | 45V | -55°C ~ 150°C | |
| MBRH30040RL | DIODE SCHOTTKY 40V 300A D67 | GeneSiC Semiconductor | D-67 | 300A | Schottky | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 5mA @ 40V | 600mV @ 300A | 40V | -55°C ~ 150°C | |
| MBRH12045 | DIODE SCHOTTKY 45V 120A D-67 | GeneSiC Semiconductor | D-67 | 120A | Schottky | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 4mA @ 20V | 650mV @ 120A | 45V | ||
| MBRH120200 | DIODE SCHOTTKY 200V 120A D-67 | GeneSiC Semiconductor | D-67 | 120A | Schottky | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 200V | 920mV @ 120A | 200V | ||
| MBRH12060R | DIODE SCHOTTKY 60V 120A D-67 | GeneSiC Semiconductor | D-67 | 120A | Schottky, Reverse Polarity | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 4mA @ 20V | 750mV @ 120A | 60V | ||
| MBRH240150R | DIODE SCHOTTKY 150V 240A D67 | GeneSiC Semiconductor | D-67 | 240A | Schottky | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 150V | 880mV @ 240A | 150V | -55°C ~ 150°C | |
| MBRH200150R | DIODE SCHOTTKY 200V 200A D-67 | GeneSiC Semiconductor | D-67 | 200A | Schottky, Reverse Polarity | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 200V | 920mV @ 200A | 200V | -55°C ~ 150°C | |
| MBRH15030L | DIODE SCHOTTKY 30V 150A D-67 | GeneSiC Semiconductor | D-67 | 150A | Schottky | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 3mA @ 30V | 580mV @ 150A | 30V | -55°C ~ 150°C |
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