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- Конфигурация
- Технология
- Рабочая температура
- Скорость
- Мощность - Макс.
- Напряжение стабилизации
- Имеданс (Макс) (Zzt)
- Ток утечки
- Ток, макс.
- Емкость @ Vr, F
- Прямое напряжение
- Рассеиваемая мощность (Макс)
- Сопротивление @ If, F
- Коэфициент емкости
- Обратное постоянное напряжение (Vr) (Max)
- Время обратного восстановления (trr)
- Рабочая температура перехода
- Конфигурация диода
- Параметры коэфициента емкости
- Добротность @ Vr, F
- Средний выпрямленный ток (Io) на диод
- Серия
Наименование | Описание | Производитель
|
Package / Case
|
Средний выпрямленный ток (Io)
|
Тип диода
|
Вид монтажа
|
Тип корпуса
|
Скорость
|
Ток утечки
|
Прямое напряжение
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Обратное постоянное напряжение (Vr) (Max)
|
Время обратного восстановления (trr)
|
Рабочая температура перехода
|
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MURH10040R | DIODE GEN PURP 400V 100A D-67 | GeneSiC Semiconductor | D-67 | 100A | Standard, Reverse Polarity | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 50V | 1.3V @ 100A | 400V | 90ns | |
MBRH12080R | DIODE SCHOTTKY 80V 120A D-67 | GeneSiC Semiconductor | D-67 | 120A | Schottky, Reverse Polarity | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 4mA @ 20V | 840mV @ 120A | 80V | ||
MBRH15035L | DIODE SCHOTTKY 35V 150A D-67 | GeneSiC Semiconductor | D-67 | 150A | Schottky | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 3mA @ 35V | 600mV @ 150A | 35V | ||
MBRH24080R | DIODE SCHOTTKY 80V 240A D67 | GeneSiC Semiconductor | D-67 | 240A | Schottky | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 80V | 840mV @ 240A | 80V | -55°C ~ 150°C | |
MURH7060R | DIODE GEN PURP 600V 70A D-67 | GeneSiC Semiconductor | D-67 | 70A | Standard | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 600V | 1.7V @ 70A | 600V | 110ns | -55°C ~ 150°C |
MBRH12045R | DIODE SCHOTTKY 45V 120A D-67 | GeneSiC Semiconductor | D-67 HALF-PAK | 120A | Schottky, Reverse Polarity | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 45V | 700mV @ 120A | 45V | -55°C ~ 150°C | |
MURH10060R | DIODE GEN PURP 600V 100A D-67 | GeneSiC Semiconductor | D-67 | 100A | Standard, Reverse Polarity | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 600V | 1.7V @ 100A | 600V | 110ns | |
MBRH12020R | DIODE SCHOTTKY 20V 120A D-67 | GeneSiC Semiconductor | D-67 | 120A | Schottky, Reverse Polarity | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 4mA @ 20V | 650mV @ 120A | 20V | ||
MBRH12030R | DIODE SCHOTTKY 30V 120A D-67 | GeneSiC Semiconductor | D-67 | 120A | Schottky, Reverse Polarity | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 4mA @ 20V | 650mV @ 120A | 30V | ||
MURH7040R | DIODE GEN PURP 400V 70A D-67 | GeneSiC Semiconductor | D-67 | 70A | Standard | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 400V | 1.3V @ 70A | 400V | 90ns | -55°C ~ 155°C |
MURH10010 | DIODE GEN PURP 100V 100A D-67 | GeneSiC Semiconductor | D-67 | 100A | Standard | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 50V | 1.3V @ 100A | 100V | 75ns | |
MBRH200150 | DIODE SCHOTTKY 150V 200A D-67 | GeneSiC Semiconductor | D-67 | 200A | Schottky | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 150V | 880mV @ 200A | 150V | -55°C ~ 150°C | |
MBRH200200 | DIODE SCHOTTKY 200V 200A D-67 | GeneSiC Semiconductor | D-67 | 200A | Schottky | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 200V | 920mV @ 200A | 200V | -55°C ~ 150°C | |
MBRH30030RL | DIODE SCHOTTKY 30V 300A D67 | GeneSiC Semiconductor | D-67 | 300A | Schottky | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 3mA @ 30V | 580mV @ 300A | 30V | -55°C ~ 150°C | |
MBRH15030RL | DIODE SCHOTTKY 30V 150A D-67 | GeneSiC Semiconductor | D-67 | 150A | Schottky, Reverse Polarity | Chassis Mount | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | 3mA @ 30V | 30V |
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