• Тип диода
  • Производитель
  • Тип корпуса
Найдено: 2069
Наименование Описание Производитель
Package / Case
Средний выпрямленный ток (Io)
Тип диода
Вид монтажа
Тип корпуса
Скорость
Ток утечки
Емкость @ Vr, F
Прямое напряжение
Обратное постоянное напряжение (Vr) (Max)
Время обратного восстановления (trr)
Рабочая температура перехода
Конфигурация диода
Средний выпрямленный ток (Io) на диод
Серия
CDBJFSC3650-G DIODE, SIC STKY 3A 650V TO-220F Comchip Technology TO-220-2 Full Pack 3A (DC) Silicon Carbide Schottky Through Hole TO-220F No Recovery Time > 500mA (Io) 100µA @ 650V 190pF @ 0V, 1MHz 1.7V @ 3A 650V 0ns -55°C ~ 175°C
GD10MPS12A 1200V 10A TO-220-2 SIC SCHOTTKY GeneSiC Semiconductor TO-220-2 25A (DC) Silicon Carbide Schottky Through Hole TO-220-2 No Recovery Time > 500mA (Io) 5µA @ 1200V 367pF @ 1V, 1MHz 1.8V @ 10A 1200V 0ns -55°C ~ 175°C SiC Schottky MPS™
G5S06510DT SIC SCHOTTKY DIODE 650V 10A 2-PI Global Power Technology Co. Ltd TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 38A (DC) Silicon Carbide Schottky Surface Mount TO-263 No Recovery Time > 500mA (Io) 50µA @ 650V 645pF @ 0V, 1MHz 1.5V @ 10A 650V 0ns -55°C ~ 175°C
G4S06540PT SIC SCHOTTKY DIODE 650V 40A 2-PI Global Power Technology-GPT TO-247-2 81.8A (DC) Silicon Carbide Schottky Through Hole TO-247AC No Recovery Time > 500mA (Io) 50µA @ 650V 1860pF @ 0V, 1MHz 1.7V @ 40A 650V 0ns -55°C ~ 175°C
G5S12020B SIC SCHOTTKY DIODE 1200V 20A 3-P Global Power Technology-GPT TO-247-3 Silicon Carbide Schottky Through Hole TO-247AB No Recovery Time > 500mA (Io) 50µA @ 1200V 1.7V @ 10A 1200V 0ns -55°C ~ 175°C 1 Pair Common Cathode 33A (DC)
JAN1N6940UTK3AS/TR DIODE POWER SCHOTTKY Microchip Technology ThinKey™3 150A Silicon Carbide Schottky Surface Mount ThinKey™3 Fast Recovery =< 500ns, > 200mA (Io) 5mA @ 15V 500 mV @ 150 A 15V -65°C ~ 175°C
FFSP1665A DIODE SCHOTTKY 650V 16A TO220-2 onsemi TO-220-2 16A (DC) Silicon Carbide Schottky Through Hole TO-220-2 No Recovery Time > 500mA (Io) 200µA @ 650V 887pF @ 1V, 100kHz 1.75V @ 16A 650V 0ns -55°C ~ 175°C
PCDP2065G1_T0_00001 TO-220AC, SIC Panjit International Inc. TO-220-2 20A (DC) Silicon Carbide Schottky Through Hole TO-220AC No Recovery Time > 500mA (Io) 120µA @ 650V 747pF @ 1V, 1MHz 1.7V @ 20A 650V 0ns -55°C ~ 175°C
IDW10S120FKSA1 RECTIFIER DIODE Rochester Electronics, LLC TO-247-3 10A (DC) Silicon Carbide Schottky Through Hole PG-TO247-3-41 No Recovery Time > 500mA (Io) 240µA @ 1.2V 580pF @ 1V, 1MHz 1.8V @ 10A 1.2V 0ns -55°C ~ 175°C CoolSiC™+
SCS206AJTLL DIODE SCHOTTKY 650V 6A TO263AB Rohm Semiconductor TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 6A (DC) Silicon Carbide Schottky Surface Mount TO-263AB No Recovery Time > 500mA (Io) 120µA @ 600V 219pF @ 1V, 1MHz 1.55V @ 6A 650V 0ns 175°C (Max)
GP2D010A120U DIODE ARRAY SCHOTTKY 1200V TO247 SemiQ TO-247-3 Silicon Carbide Schottky Through Hole TO-247-3 No Recovery Time > 500mA (Io) 10µA @ 1200V 1.8V @ 5A 1200V -55°C ~ 175°C 1 Pair Common Cathode 17A (DC) AMP
GP2D008A120A DIODE SCHOTTKY 1.2KV 24A TO220-2 SemiQ TO-220-2 24A (DC) Silicon Carbide Schottky Through Hole TO-220-2 No Recovery Time > 500mA (Io) 20µA @ 1200V 508pF @ 1V, 1MHz 1.8V @ 8A 1200V 0ns -50°C ~ 175°C AMP
GDP15S120A DIODE SCHOTTKY 1.2KV 15A TO220-2 SemiQ TO-220-2 15A (DC) Silicon Carbide Schottky Through Hole TO-220-2 No Recovery Time > 500mA (Io) 100µA @ 1200V 895pF @ 1V, 1MHz 1.7V @ 15A 1200V 0ns -55°C ~ 135°C AMP
STPSC10H12G2Y-TR AUTOMOTIVE GRADE 1200V, 10A, SIL STMicroelectronics TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 10A Silicon Carbide Schottky Surface Mount D2PAK HV No Recovery Time > 500mA (Io) 60µA @ 1200V 725pF @ 0V, 1MHz 1.5V @ 10A 1200V 0ns -40°C ~ 175°C Automotive, AEC-Q101, ECOPACK®2
C6D04065E GEN 6 650V 4 A SBD Wolfspeed, Inc. TO-252-3, DPak (2 Leads + Tab), SC-63 16A (DC) Silicon Carbide Schottky Surface Mount TO-252-2 No Recovery Time > 500mA (Io) 20µA @ 650V 256pF @ 0V, 1MHz 1.5V @ 4A 650V 0ns -55°C ~ 175°C Z-Rec®