• Тип диода
  • Производитель
  • Тип корпуса
Найдено: 2069
Наименование Описание Производитель
Package / Case
Средний выпрямленный ток (Io)
Тип диода
Вид монтажа
Тип корпуса
Скорость
Ток утечки
Емкость @ Vr, F
Прямое напряжение
Обратное постоянное напряжение (Vr) (Max)
Время обратного восстановления (trr)
Рабочая температура перехода
Конфигурация диода
Средний выпрямленный ток (Io) на диод
Серия
C2D05120A DIODE SCHOTTKY 1.2KV 5A TO220-2 Cree/Wolfspeed TO-220-2 17.5A (DC) Silicon Carbide Schottky Through Hole TO-220-2 No Recovery Time > 500mA (Io) 200µA @ 1200V 455pF @ 0V, 1MHz 1.8V @ 5A 1200V 0ns -55°C ~ 175°C Zero Recovery™
GD15MPS17H 1700V 15A TO-247-2 SIC SCHOTTKY GeneSiC Semiconductor TO-247-2 36A (DC) Silicon Carbide Schottky Through Hole TO-247-2 No Recovery Time > 500mA (Io) 20µA @ 1700V 1.082nF @ 1V, 1MHz 1.8V @ 15A 1700V 0ns -55°C ~ 175°C SiC Schottky MPS™
GB01SLT12-252 DIODE SILICON 1.2KV 1A TO252 GeneSiC Semiconductor TO-252-3, DPak (2 Leads + Tab), SC-63 1A Silicon Carbide Schottky Surface Mount TO-252 No Recovery Time > 500mA (Io) 2µA @ 1200V 69pF @ 1V, 1MHz 1.8V @ 1A 1200V 0ns -55°C ~ 175°C SiC Schottky MPS™
G5S12008H SIC SCHOTTKY DIODE 1200V 8A 2-PI Global Power Technology Co. Ltd TO-220-2 Full Pack 16A (DC) Silicon Carbide Schottky Through Hole TO-220F No Recovery Time > 500mA (Io) 50µA @ 1200V 550pF @ 0V, 1MHz 1.7V @ 8A 1200V 0ns -55°C ~ 175°C
GAS06520L SIC SCHOTTKY DIODE 650V 20A 3-PI Global Power Technology Co. Ltd TO-247-3 66.5A (DC) Silicon Carbide Schottky Through Hole TO-247AB No Recovery Time > 500mA (Io) 50µA @ 650V 1390pF @ 0V, 1MHz 1.7V @ 20A 650V 0ns -55°C ~ 175°C
G3S12003H SIC SCHOTTKY DIODE 1200V 3A 2-PI Global Power Technology-GPT TO-220-2 Full Pack 9A (DC) Silicon Carbide Schottky Through Hole TO-220F No Recovery Time > 500mA (Io) 100µA @ 1200V 260pF @ 0V, 1MHz 1.7V @ 3A 1200V 0ns -55°C ~ 175°C
G3S06510P SIC SCHOTTKY DIODE 650V 10A 2-PI Global Power Technology-GPT TO-247-2 32.8A (DC) Silicon Carbide Schottky Through Hole TO-247AC No Recovery Time > 500mA (Io) 50µA @ 650V 690pF @ 0V, 1MHz 1.7V @ 10A 650V 0ns -55°C ~ 175°C
IDH10S120AKSA1 DIODE SCHOTTKY 1200V 10A TO220-2 Infineon Technologies TO-220-2 10A (DC) Silicon Carbide Schottky Through Hole PG-TO220-2-2 No Recovery Time > 500mA (Io) 240µA @ 1200V 500pF @ 1V, 1MHz 1.8V @ 10A 1200V 0ns -55°C ~ 175°C CoolSiC™+
FFSB0865B-F085 650V 8A SIC SBD GEN1.5 onsemi TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 10.1A (DC) Silicon Carbide Schottky Surface Mount D²PAK-2 (TO-263-2) No Recovery Time > 500mA (Io) 40µA @ 650V 336pF @ 1V, 100kHz 1.7V @ 8A 650V 0ns -55°C ~ 175°C
FFSH30120A 1200V 30A SIC SBD onsemi TO-247-2 46A (DC) Silicon Carbide Schottky Through Hole TO-247-2 No Recovery Time > 500mA (Io) 200µA @ 1200V 1740pF @ 1V, 100kHz 1200V 0ns -55°C ~ 175°C
IDH08S120AKSA1 RECTIFIER DIODE Rochester Electronics, LLC TO-220-2 7.5A (DC) Silicon Carbide Schottky Through Hole PG-TO220-2-2 No Recovery Time > 500mA (Io) 180µA @ 1.2V 380pF @ 1V, 1MHz 1.8V @ 7.5A 1.2V 0ns -55°C ~ 175°C CoolSiC™+
GDP30D120B DIODE SCHOTTKY 1200V 15A TO247-3 SemiQ TO-247-3 Silicon Carbide Schottky Through Hole TO-247-3 Fast Recovery =< 500ns, > 200mA (Io) 100µA @ 1200V 1.7V @ 15A 1200V -55°C ~ 135°C 1 Pair Common Anode 15A (DC) AMP
STPSC806D DIODE SCHOTTKY 600V 8A TO220AC STMicroelectronics TO-220-2 8A Silicon Carbide Schottky Through Hole TO-220AC No Recovery Time > 500mA (Io) 100µA @ 600V 450pF @ 0V, 1MHz 1.7V @ 8A 600V 0ns -40°C ~ 175°C
STPSC2H065B-TR 650 V, 2 A HIGH SURGE SILICON CA STMicroelectronics TO-252-3, DPak (2 Leads + Tab), SC-63 2A Silicon Carbide Schottky Surface Mount DPAK No Recovery Time > 500mA (Io) 20µA @ 650V 135pF @ 0V, 1MHz 1.55V @ 2A 650V -40°C ~ 175°C
C3D02065E DIODE SCHOTTKY 650V 2A TO252-2 Wolfspeed, Inc. TO-252-3, DPak (2 Leads + Tab), SC-63 8A (DC) Silicon Carbide Schottky Surface Mount TO-252-2 No Recovery Time > 500mA (Io) 50µA @ 650V 120pF @ 0V, 1MHz 1.8V @ 2A 650V 0ns -55°C ~ 175°C Z-Rec®