• Тип диода
  • Производитель
  • Тип корпуса
Найдено: 2069
Наименование Описание Производитель
Package / Case
Средний выпрямленный ток (Io)
Тип диода
Вид монтажа
Тип корпуса
Скорость
Ток утечки
Емкость @ Vr, F
Прямое напряжение
Обратное постоянное напряжение (Vr) (Max)
Время обратного восстановления (trr)
Рабочая температура перехода
Конфигурация диода
Средний выпрямленный ток (Io) на диод
Серия
G3S12005A SIC SCHOTTKY DIODE 1200V 5A 2-PI Global Power Technology Co. Ltd TO-220-2 22A (DC) Silicon Carbide Schottky Through Hole TO-220AC No Recovery Time > 500mA (Io) 50µA @ 1200V 475pF @ 0V, 1MHz 1.7V @ 5A 1200V 0ns -55°C ~ 175°C
G3S06510D SIC SCHOTTKY DIODE 650V 10A 2-PI Global Power Technology Co. Ltd TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 34A (DC) Silicon Carbide Schottky Surface Mount TO-263 No Recovery Time > 500mA (Io) 50µA @ 650V 690pF @ 0V, 1MHz 1.7V @ 10A 650V 0ns -55°C ~ 175°C
G3S06505H SIC SCHOTTKY DIODE 650V 5A 2-PIN Global Power Technology-GPT TO-220-2 Full Pack 15.4A (DC) Silicon Carbide Schottky Through Hole TO-220F No Recovery Time > 500mA (Io) 50µA @ 650V 424pF @ 0V, 1MHz 1.7V @ 5A 650V 0ns -55°C ~ 175°C
SDT06S60 DIODE SCHOTTKY 600V 6A TO220-2 Infineon Technologies TO-220-2 6A (DC) Silicon Carbide Schottky Through Hole PG-TO220-2-2 No Recovery Time > 500mA (Io) 200µA @ 600V 300pF @ 0V, 1MHz 1.7V @ 6A 600V 0ns -55°C ~ 175°C CoolSiC™+
IDL02G65C5XUMA1 DIODE SCHOTTKY 650V 2A VSON-4 Infineon Technologies 4-PowerTSFN 2A (DC) Silicon Carbide Schottky Surface Mount PG-VSON-4 No Recovery Time > 500mA (Io) 35µA @ 650V 70pF @ 1V, 1MHz 1.7V @ 2A 650V 0ns -55°C ~ 175°C CoolSiC™+
P3D12020K2 DIODE SCHOTTKY 1200V 50A TO247-2 PN Junction Semiconductor TO-247-2 51A (DC) Silicon Carbide Schottky TO-247-2 No Recovery Time > 500mA (Io) 60µA @ 650V 1200V 0ns -55°C ~ 175°C (TJ) P3D
P3D12005T2 DIODE SCHOTTKY 1200V 5A TO220-2 PN Junction Semiconductor TO-220-2 21A (DC) Silicon Carbide Schottky TO-220-2 No Recovery Time > 500mA (Io) 44 µA @ 650 V 1200V 0ns -55°C ~ 175°C (TJ) P3D
SCS106AGC DIODE SCHOTTKY 600V 6A TO220AC Rohm Semiconductor TO-220-2 6A Silicon Carbide Schottky Through Hole TO-220AC No Recovery Time > 500mA (Io) 120µA @ 600V 260pF @ 1V, 1MHz 1.5V @ 6A 600V 0ns 175°C (Max)
SICRB6650TR DIODE SCHOTTKY SILICON CARBIDE S SMC Diode Solutions TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 6A Silicon Carbide Schottky Surface Mount D2PAK No Recovery Time > 500mA (Io) 50µA @ 650V 150pF @ 5V, 1MHz 1.8V @ 6A 650V 0ns -55°C ~ 175°C
SICRB10650CTTR DIODE SCHOTTKY SILICON CARBIDE S SMC Diode Solutions TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 5A Silicon Carbide Schottky Surface Mount D2PAK No Recovery Time > 500mA (Io) 60µA @ 650V 1.7V @ 5A 650V 0ns -55°C ~ 175°C
S3D06065F DIODE SCHOTTKY SILICON CARBIDE S SMC Diode Solutions TO-220-2 Full Pack 6A Silicon Carbide Schottky Through Hole ITO-220AC (TO-220-2F) No Recovery Time > 500mA (Io) 8 µA @ 650 V 382pF @ 0V, 1MHz 1.7V @ 6A 650V 0ns -55°C ~ 175°C
STPSC6H065D DIODE SCHOTTKY 650V 6A TO220AC STMicroelectronics TO-220-2 6A Silicon Carbide Schottky Through Hole TO-220AC No Recovery Time > 500mA (Io) 60µA @ 650V 300pF @ 0V, 1MHz 1.75V @ 6A 650V 0ns -40°C ~ 175°C
STPSC1206D DIODE SCHOTTKY 600V 12A TO220AC STMicroelectronics TO-220-2 12A Silicon Carbide Schottky Through Hole TO-220AC No Recovery Time > 500mA (Io) 150µA @ 600V 750pF @ 0V, 1MHz 1.7V @ 12A 600V 0ns -40°C ~ 175°C
WNSC401200CWQ SILICON CARBIDE POWER DIODE WeEn Semiconductors TO-247-3 40A Silicon Carbide Schottky Through Hole TO-247-3 No Recovery Time > 500mA (Io) 200µA @ 1200V 810pF @ 1V, 1MHz 1.75V @ 20A 1200V 0ns 175°C (Max)
C3D08065I DIODE SCHOTTKY 650V 8A TO220-2 Wolfspeed, Inc. TO-220-2 Isolated Tab 16.5A (DC) Silicon Carbide Schottky Through Hole TO-220-2 Isolated Tab No Recovery Time > 500mA (Io) 60µA @ 650V 441pF @ 0V, 1MHz 1.8V @ 8A 650V 0ns -55°C ~ 175°C Z-Rec®