- Тип диода
- Производитель
- Тип корпуса
-
- Конфигурация
- Технология
- Рабочая температура
- Скорость
- Мощность - Макс.
- Напряжение стабилизации
- Имеданс (Макс) (Zzt)
- Ток утечки
- Ток, макс.
- Емкость @ Vr, F
- Прямое напряжение
- Рассеиваемая мощность (Макс)
- Сопротивление @ If, F
- Коэфициент емкости
- Обратное постоянное напряжение (Vr) (Max)
- Время обратного восстановления (trr)
- Рабочая температура перехода
- Конфигурация диода
- Параметры коэфициента емкости
- Добротность @ Vr, F
- Средний выпрямленный ток (Io) на диод
- Серия
| Наименование | Описание | Производитель
|
Package / Case
|
Средний выпрямленный ток (Io)
|
Тип диода
|
Вид монтажа
|
Тип корпуса
|
Скорость
|
Ток утечки
|
Емкость @ Vr, F
|
Прямое напряжение
|
Обратное постоянное напряжение (Vr) (Max)
|
Время обратного восстановления (trr)
|
Рабочая температура перехода
|
Конфигурация диода
|
Средний выпрямленный ток (Io) на диод
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| AS3BG-M3/I | DIODE AVALANCHE 400V 3A DO214AA | Vishay General Semiconductor - Diodes Division | DO-214AA, SMB | 3A (DC) | Avalanche | Surface Mount | DO-214AA (SMB) | Fast Recovery =< 500ns, > 200mA (Io) | 20µA @ 600V | 40pF @ 4V, 1MHz | 1.05V @ 3A | 400V | -55°C ~ 175°C | ||||
| AR1PG-M3/84A | DIODE AVALANCHE 400V 1A DO220AA | Vishay General Semiconductor - Diodes Division | DO-220AA | 1A | Avalanche | Surface Mount | DO-220AA (SMP) | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 400V | 12.5pF @ 4V, 1MHz | 1.25V @ 1A | 400V | 140ns | -55°C ~ 175°C | eSMP® | ||
| AR3PM-M3/86A | DIODE AVALANCHE 1KV 1.6A TO277 | Vishay General Semiconductor - Diodes Division | TO-277, 3-PowerDFN | 1.6A (DC) | Avalanche | Surface Mount | TO-277A (SMPC) | Fast Recovery =< 500ns, > 200mA (Io) | 10µA @ 1000V | 34pF @ 4V, 1MHz | 1.9V @ 3A | 1000V | 120ns | -55°C ~ 175°C | eSMP® | ||
| SF4003-TR | DIODE AVAL 1A 200V SOD-57 | Vishay General Semiconductor - Diodes Division | SOD-57, Axial | 1A | Avalanche | Through Hole | SOD-57 | Fast Recovery =< 500ns, > 200mA (Io) | 5µA @ 200V | 76pF @ 4V, 1MHz | 1V @ 1A | 200V | 50ns | -55°C ~ 175°C | |||
| AR3PD-M3/86A | DIODE AVALANCHE 200V 1.8A TO277A | Vishay General Semiconductor - Diodes Division | TO-277, 3-PowerDFN | 1.8A (DC) | Avalanche | Surface Mount | TO-277A (SMPC) | Fast Recovery =< 500ns, > 200mA (Io) | 10µA @ 200V | 44pF @ 4V, 1MHz | 1.6V @ 3A | 200V | 140ns | -55°C ~ 175°C | eSMP® | ||
| 1N5059TAP | DIODE AVALANCHE 200V 2A SOD57 | Vishay General Semiconductor - Diodes Division | SOD-57, Axial | 2A | Avalanche | Through Hole | SOD-57 | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 200V | 40pF @ 0V, 1MHz | 1.15V @ 2.5A | 200V | 4µs | -55°C ~ 175°C | |||
| AS4PM-M3/87A | DIODE AVALANCHE 1KV 2.4A TO277 | Vishay General Semiconductor - Diodes Division | TO-277, 3-PowerDFN | 2.4A (DC) | Avalanche | Surface Mount | TO-277A (SMPC) | Standard Recovery >500ns, > 200mA (Io) | 10µA @ 1000V | 60pF @ 4V, 1MHz | 962mV @ 2A | 1000V | 1.8µs | -55°C ~ 175°C | eSMP® | ||
| 1N5060TR | DIODE AVALANCHE 400V 2A SOD57 | Vishay General Semiconductor - Diodes Division | SOD-57, Axial | 2A | Avalanche | Through Hole | SOD-57 | Standard Recovery >500ns, > 200mA (Io) | 1µA @ 400V | 40pF @ 0V, 1MHz | 1.15V @ 2.5A | 400V | 4µs | -55°C ~ 175°C | |||
| AU2PDHM3_A/I | DIODE AVALANCHE 200V 1.6A TO277A | Vishay General Semiconductor - Diodes Division | TO-277, 3-PowerDFN | 1.6A | Avalanche | Surface Mount | TO-277A (SMPC) | Fast Recovery =< 500ns, > 200mA (Io) | 10µA @ 200V | 42pF @ 4V, 1MHz | 1.9V @ 2A | 200V | 75ns | -55°C ~ 175°C | Automotive, AEC-Q101, eSMP® | ||
| BYV27-200-TAP | DIODE AVALANCHE 200V 2A SOD57 | Vishay General Semiconductor - Diodes Division | SOD-57, Axial | 2A | Avalanche | Through Hole | SOD-57 | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 200V | 1.07V @ 3A | 200V | 25ns | -55°C ~ 175°C | ||||
| BYG22BHM3_A/H | DIODE AVALANCHE 100V 2A DO214AC | Vishay General Semiconductor - Diodes Division | DO-214AC, SMA | 2A | Avalanche | Surface Mount | DO-214AC (SMA) | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 100V | 1.1V @ 2A | 100V | 25ns | -55°C ~ 150°C | Automotive, AEC-Q101 | |||
| BYG20JHE3_A/H | DIODE AVALANCHE 600V 1.5A DO214 | Vishay General Semiconductor - Diodes Division | DO-214AC, SMA | 1.5A | Avalanche | Surface Mount | DO-214AC (SMA) | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 600V | 1.4V @ 1.5A | 600V | 75ns | -55°C ~ 150°C | Automotive, AEC-Q101 | |||
| BYV98-100-TAP | DIODE AVALANCHE 100V 4A SOD64 | Vishay General Semiconductor - Diodes Division | SOD-64, Axial | 4A | Avalanche | Through Hole | SOD-64 | Fast Recovery =< 500ns, > 200mA (Io) | 10µA @ 100V | 1.1V @ 5A | 100V | 35ns | -55°C ~ 175°C | ||||
| BYV12-TAP | DIODE AVALANCHE 100V 1.5A SOD57 | Vishay General Semiconductor - Diodes Division | SOD-57, Axial | 1.5A | Avalanche | Through Hole | SOD-57 | Fast Recovery =< 500ns, > 200mA (Io) | 5µA @ 100V | 1.5V @ 1A | 100V | 300ns | -55°C ~ 175°C | ||||
| BYG24GHE3_A/I | DIODE AVALANCHE 400V 1.5A DO214 | Vishay General Semiconductor - Diodes Division | DO-214AC, SMA | 1.5A | Avalanche | Surface Mount | DO-214AC (SMA) | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 400V | 1.25V @ 1.5A | 400V | 140ns | -55°C ~ 150°C | Automotive, AEC-Q101 |
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