• Тип диода
  • Производитель
  • Тип корпуса
Найдено: 886
Наименование Описание Производитель
Package / Case
Средний выпрямленный ток (Io)
Тип диода
Вид монтажа
Тип корпуса
Скорость
Ток утечки
Емкость @ Vr, F
Прямое напряжение
Обратное постоянное напряжение (Vr) (Max)
Время обратного восстановления (trr)
Рабочая температура перехода
Конфигурация диода
Средний выпрямленный ток (Io) на диод
Серия
BYG10J-AQ ST Rect, 600V, 1.5A Diotec Semiconductor DO-214AC, SMA 1.5A Avalanche Surface Mount DO-214AC (SMA) Standard Recovery >500ns, > 200mA (Io) 5µA @ 600V 1.15V @ 1.5A 600V 1.5µs -50°C ~ 150°C
RURU50120 RECTIFIER DIODE Harris Corporation TO-218-1 50A Avalanche Chassis Mount TO-218 Fast Recovery =< 500ns, > 200mA (Io) 500µA @ 1200V 2.1V @ 50A 1200V 200ns -65°C ~ 175°C
DAA10EM1800PZ-TUB POWER DIODE DISCRETES-RECTIFIER IXYS TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 10A Avalanche Surface Mount TO-263HV Standard Recovery >500ns, > 200mA (Io) 10µA @ 1800V 4pF @ 400V, 1MHz 1.21V @ 10A 1800V -55°C ~ 175°C
DSA9-16F DIODE AVALANCHE 1.6KV 11A DO203 IXYS DO-203AA, DO-4, Stud 11A Avalanche Chassis, Stud Mount DO-203AA Standard Recovery >500ns, > 200mA (Io) 3mA @ 1600V 1.4V @ 36A 1600V -40°C ~ 180°C
1N5622C.TR DIODE GEN PURP 1KV 1A AXIAL Semtech Corporation Axial 2A Avalanche Through Hole Axial Standard Recovery >500ns, > 200mA (Io) 500nA @ 1000V 23pF @ 5V, 1MHz 1.1V @ 1A 1000V 2µs -65°C ~ 175°C
BYT78-TAP DIODE AVALANCHE 1KV 3A SOD64 Vishay General Semiconductor - Diodes Division SOD-64, Axial 3A Avalanche Through Hole SOD-64 Fast Recovery =< 500ns, > 200mA (Io) 5µA @ 1000V 1.2V @ 3A 1000V 250ns -55°C ~ 175°C
AS3PJHM3/87A DIODE AVALANCHE 600V 2.1A TO277A Vishay General Semiconductor - Diodes Division TO-277, 3-PowerDFN 2.1A (DC) Avalanche Surface Mount TO-277A (SMPC) Standard Recovery >500ns, > 200mA (Io) 10µA @ 600V 37pF @ 4V, 1MHz 920mV @ 1.5A 600V 1.2µs -55°C ~ 175°C eSMP®
AU1PG-M3/85A DIODE AVALANCHE 400V 1A DO220AA Vishay General Semiconductor - Diodes Division DO-220AA 1A Avalanche Surface Mount DO-220AA (SMP) Fast Recovery =< 500ns, > 200mA (Io) 1µA @ 400V 11pF @ 4V, 1MHz 1.5V @ 1A 400V 75ns -55°C ~ 175°C eSMP®
BYG21K-M3/TR DIODE AVALANCHE 800V 1.5A Vishay General Semiconductor - Diodes Division DO-214AC, SMA 1.5A Avalanche Surface Mount DO-214AC (SMA) Fast Recovery =< 500ns, > 200mA (Io) 1µA @ 800V 1.6V @ 1.5A 800V 120ns -55°C ~ 150°C
BYG23MHM3_A/I DIODE AVALANCHE 1KV 1.5A DO214AC Vishay General Semiconductor - Diodes Division DO-214AC, SMA 1.5A Avalanche Surface Mount DO-214AC (SMA) Fast Recovery =< 500ns, > 200mA (Io) 5µA @ 1000V 1.7V @ 1A 1000V 75ns -55°C ~ 150°C Automotive, AEC-Q101
BYT53F-TAP DIODE AVALANCHE 300V 1.9A SOD57 Vishay General Semiconductor - Diodes Division SOD-57, Axial 1.9A Avalanche Through Hole SOD-57 Fast Recovery =< 500ns, > 200mA (Io) 5µA @ 300V 1.1V @ 1A 300V 50ns -55°C ~ 175°C
AGP15-400-E3/54 DIODE AVALANCHE 400V 1.5A DO204 Vishay General Semiconductor - Diodes Division DO-204AC, DO-15, Axial 1.5A Avalanche Through Hole DO-204AC (DO-15) Standard Recovery >500ns, > 200mA (Io) 5µA @ 400V 1.1V @ 1.5A 400V 2µs -65°C ~ 175°C SUPERECTIFIER®
BYG10J-M3/TR3 DIODE AVALANCHE 600V 1.5A Vishay General Semiconductor - Diodes Division DO-214AC, SMA 1.5A Avalanche Surface Mount DO-214AC (SMA) Standard Recovery >500ns, > 200mA (Io) 1µA @ 600V 1.15V @ 1.5A 600V 4µs -55°C ~ 150°C
BYG10G-M3/TR DIODE AVALANCHE 400V 1.5A Vishay General Semiconductor - Diodes Division DO-214AC, SMA 1.5A Avalanche Surface Mount DO-214AC (SMA) Standard Recovery >500ns, > 200mA (Io) 1µA @ 400V 1.15V @ 1.5A 400V 4µs -55°C ~ 150°C
AS1PJHM3/84A DIODE AVALANCHE 600V 1.5A DO220 Vishay General Semiconductor - Diodes Division DO-220AA 1.5A (DC) Avalanche Surface Mount DO-220AA (SMP) Standard Recovery >500ns, > 200mA (Io) 5µA @ 600V 10.4pF @ 4V, 1MHz 1.15V @ 1.5A 600V 1.5µs -55°C ~ 175°C Automotive, AEC-Q101, eSMP®