- Тип диода
- Производитель
- Тип корпуса
-
- Конфигурация
- Технология
- Рабочая температура
- Скорость
- Мощность - Макс.
- Напряжение стабилизации
- Имеданс (Макс) (Zzt)
- Ток утечки
- Ток, макс.
- Емкость @ Vr, F
- Прямое напряжение
- Рассеиваемая мощность (Макс)
- Сопротивление @ If, F
- Коэфициент емкости
- Обратное постоянное напряжение (Vr) (Max)
- Время обратного восстановления (trr)
- Рабочая температура перехода
- Конфигурация диода
- Параметры коэфициента емкости
- Добротность @ Vr, F
- Средний выпрямленный ток (Io) на диод
- Серия
| Наименование | Описание | Производитель
|
Package / Case
|
Средний выпрямленный ток (Io)
|
Тип диода
|
Вид монтажа
|
Тип корпуса
|
Скорость
|
Ток утечки
|
Емкость @ Vr, F
|
Прямое напряжение
|
Обратное постоянное напряжение (Vr) (Max)
|
Время обратного восстановления (trr)
|
Рабочая температура перехода
|
Конфигурация диода
|
Средний выпрямленный ток (Io) на диод
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RHRG7570 | RECTIFIER DIODE | Harris Corporation | TO-247-3 | 75A | Avalanche | Through Hole | TO-247 | Fast Recovery =< 500ns, > 200mA (Io) | 500 µA @ 700 V | 3V @ 75A | 700V | 100ns | -65°C ~ 175°C | ||||
| DSAI17-16A | DIODE AVALANCHE 1.6KV 25A DO203 | IXYS | DO-203AA, DO-4, Stud | 25A | Avalanche | Chassis, Stud Mount | DO-203AA | Standard Recovery >500ns, > 200mA (Io) | 4mA @ 1600V | 1.36V @ 55A | 1600V | -40°C ~ 180°C | |||||
| BYW35-TAP | DIODE AVALANCHE 500V 2A SOD57 | Vishay General Semiconductor - Diodes Division | SOD-57, Axial | 2A | Avalanche | Through Hole | SOD-57 | Fast Recovery =< 500ns, > 200mA (Io) | 5µA @ 500V | 1.1V @ 1A | 500V | 200ns | -55°C ~ 175°C | ||||
| BYG10K-M3/TR3 | DIODE AVALANCHE 800V 1.5A | Vishay General Semiconductor - Diodes Division | DO-214AC, SMA | 1.5A | Avalanche | Surface Mount | DO-214AC (SMA) | Standard Recovery >500ns, > 200mA (Io) | 1µA @ 800V | 1.15V @ 1.5A | 800V | 4µs | -55°C ~ 150°C | ||||
| BYG22D-M3/TR | DIODE AVALANCHE 200V 2A DO214AC | Vishay General Semiconductor - Diodes Division | DO-214AC, SMA | 2A | Avalanche | Surface Mount | DO-214AC (SMA) | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 200V | 1.1V @ 2A | 200V | 25ns | -55°C ~ 150°C | ||||
| BY228-13TAP | DIODE AVALANCHE 1KV 3A SOD64 | Vishay General Semiconductor - Diodes Division | SOD-64, Axial | 3A | Avalanche | Through Hole | SOD-64 | Fast Recovery =< 500ns, > 200mA (Io) | 5µA @ 1000V | 1.5V @ 5A | 1000V | 2µs | 140°C (Max) | ||||
| 1N5625-TR | DIODE AVALANCHE 400V 3A SOD64 | Vishay General Semiconductor - Diodes Division | SOD-64, Axial | 3A | Avalanche | Through Hole | SOD-64 | Standard Recovery >500ns, > 200mA (Io) | 1µA @ 400V | 60pF @ 4V, 1MHz | 1V @ 3A | 400V | 3µs | -55°C ~ 175°C | |||
| AU1PJHM3/84A | DIODE AVALANCHE 600V 1A DO220AA | Vishay General Semiconductor - Diodes Division | DO-220AA | 1A | Avalanche | Surface Mount | DO-220AA (SMP) | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 600V | 11pF @ 4V, 1MHz | 1.5V @ 1A | 600V | 75ns | -55°C ~ 175°C | Automotive, AEC-Q101, eSMP® | ||
| BYG24G-E3/TR3 | DIODE AVALANCHE 400V 1.5A | Vishay General Semiconductor - Diodes Division | DO-214AC, SMA | 1.5A | Avalanche | Surface Mount | DO-214AC (SMA) | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 400V | 1.25V @ 1.5A | 400V | 140ns | -55°C ~ 150°C | ||||
| AS4PK-M3/87A | DIODE AVALANCHE 800V 2.4A TO277A | Vishay General Semiconductor - Diodes Division | TO-277, 3-PowerDFN | 2.4A (DC) | Avalanche | Surface Mount | TO-277A (SMPC) | Standard Recovery >500ns, > 200mA (Io) | 10µA @ 800V | 60pF @ 4V, 1MHz | 962mV @ 2A | 800V | 1.8µs | -55°C ~ 175°C | eSMP® | ||
| BYG20JHM3_A/I | DIODE AVALANCHE 600V 1.5A DO214 | Vishay General Semiconductor - Diodes Division | DO-214AC, SMA | 1.5A | Avalanche | Surface Mount | DO-214AC (SMA) | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 600V | 1.4V @ 1.5A | 600V | 75ns | -55°C ~ 150°C | Automotive, AEC-Q101 | |||
| BYG20J/54 | DIODE AVALANCHE 600V 1.5A | Vishay General Semiconductor - Diodes Division | DO-214AC, SMA | 1.5A | Avalanche | Surface Mount | DO-214AC (SMA) | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 600V | 1.4V @ 1.5A | 600V | 75ns | -55°C ~ 150°C | ||||
| AR3PJHM3_A/I | DIODE AVALANCHE 600V 1.8A TO277A | Vishay General Semiconductor - Diodes Division | TO-277, 3-PowerDFN | 1.8A | Avalanche | Surface Mount | TO-277A (SMPC) | Fast Recovery =< 500ns, > 200mA (Io) | 10µA @ 600V | 44pF @ 4V, 1MHz | 1.6V @ 3A | 600V | 140ns | -55°C ~ 175°C | Automotive, AEC-Q101, eSMP® | ||
| AU1PDHM3/85A | DIODE AVALANCHE 200V 1A DO220AA | Vishay General Semiconductor - Diodes Division | DO-220AA | 1A | Avalanche | Surface Mount | DO-220AA (SMP) | Fast Recovery =< 500ns, > 200mA (Io) | 1µA @ 200V | 11pF @ 4V, 1MHz | 1.5V @ 1A | 200V | 75ns | -55°C ~ 175°C | Automotive, AEC-Q101, eSMP® | ||
| 1N5626-TR | DIODE AVALANCHE 600V 3A SOD64 | Vishay General Semiconductor - Diodes Division | SOD-64, Axial | 3A | Avalanche | Through Hole | SOD-64 | Standard Recovery >500ns, > 200mA (Io) | 1µA @ 600V | 60pF @ 4V, 1MHz | 1V @ 3A | 600V | 7.5µs | -55°C ~ 175°C |
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