• Configuration
    • Current Rating (Amps)
    • Transistor Type
    • Technology
    • Operating Temperature
    • Supplier Device Package
    • Input Type
    • FET Type
    • IGBT Type
    • Resistor - Base (R1)
    • Vce Saturation (Max) @ Ib, Ic
    • Power - Output
    • Current - Collector Cutoff (Max)
    • DC Current Gain (hFE) (Min) @ Ic, Vce
    • Frequency - Transition
    • Gain
    • Noise Figure
    • Vce(on) (Max) @ Vge, Ic
    • Input Capacitance (Cies) @ Vce
    • Input
    • Resistor - Emitter Base (R2)
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Test Condition
    • Voltage - Test
    • Current - Test
    • Current - Collector Pulsed (Icm)
    • Noise Figure (dB Typ @ f)
    • Reverse Recovery Time (trr)
    • NTC Thermistor
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Switching Energy
    • Gate Charge
    • Td (on/off) @ 25°C
    • Voltage - Breakdown (V(BR)GSS)
    • Current - Drain (Idss) @ Vds (Vgs=0)
    • Voltage - Cutoff (VGS off) @ Id
    • Resistance - RDS(On)
    • Current Drain (Id) - Max
    • Series
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List Table
Found: 94756
Partnumber Description Manufacturer
Package / Case
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Power - Max
Mounting Type
Frequency
Voltage - Rated
Configuration
Current Rating (Amps)
Transistor Type
Technology
Operating Temperature
Supplier Device Package
Input Type
FET Type
IGBT Type
Resistor - Base (R1)
Vce Saturation (Max) @ Ib, Ic
Power - Output
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency - Transition
Gain
Noise Figure
Vce(on) (Max) @ Vge, Ic
Input Capacitance (Cies) @ Vce
Input
Resistor - Emitter Base (R2)
Power Dissipation (Max)
Drain to Source Voltage (Vdss)
Test Condition
Voltage - Test
Current - Test
Current - Collector Pulsed (Icm)
Noise Figure (dB Typ @ f)
Reverse Recovery Time (trr)
NTC Thermistor
Current - Continuous Drain (Id) @ 25°C
FET Feature
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
Switching Energy
Gate Charge
Td (on/off) @ 25°C
Voltage - Breakdown (V(BR)GSS)
Current - Drain (Idss) @ Vds (Vgs=0)
Voltage - Cutoff (VGS off) @ Id
Resistance - RDS(On)
Current Drain (Id) - Max
Series
BD645-S TRANS NPN DARL 60V 8A TO220 Bourns Inc. TO-220-3 8A 60V 2W Through Hole NPN - Darlington -65°C ~ 150°C (TJ) TO-220 2.5V @ 50mA, 5A 500µA 750 @ 3A, 3V
KSC5305DFTTU-FS POWER BIPOLAR TRANSISTOR Fairchild Semiconductor TO-220-3 Full Pack 5A 400V 75W Through Hole NPN 150°C (TJ) TO-220F-3 500mV @ 400mA, 2A 10µA (ICBO) 22 @ 800mA, 1V
BC848A TRANS NPN 30V 0.1A SOT23-3 Fairchild Semiconductor TO-236-3, SC-59, SOT-23-3 100mA 30V 200mW Surface Mount NPN -65°C ~ 150°C (TJ) SOT-23 500mV @ 5mA, 100mA 100nA (ICBO) 110 @ 2mA, 5V 100MHz SOT-23
IPB80N04S403ATMA1 MOSFET N-CH 40V 80A TO263-3-2 Infineon Technologies TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Surface Mount MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) PG-TO263-3-2 N-Channel 94W (Tc) 40V 80A (Tc) 3.3mOhm @ 80A, 10V 10V 4V @ 53µA 66nC @ 10V 5260pF @ 25V ±20V OptiMOS™
IRG4BC30K-S IGBT 600V 28A 100W D2PAK Infineon Technologies TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 28A 600V 100W Surface Mount -55°C ~ 150°C (TJ) D2PAK Standard 2.7V @ 15V, 16A 480V, 16A, 23Ohm, 15V 58A 360µJ (on), 510µJ (off) 67nC 26ns/130ns
IXTH12N100 MOSFET N-CH 1000V 12A TO-247 IXYS TO-247-3 Through Hole MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) TO-247 (IXTH) N-Channel 300W (Tc) 1000V 12A (Tc) 1.05Ohm @ 6A, 10V 10V 4.5V @ 250µA 170nC @ 10V 4000pF @ 25V ±20V MegaMOS™
IXSH30N60CD1 IGBT 600V 55A 200W TO247AD IXYS TO-247-3 55A 600V 200W Through Hole -55°C ~ 150°C (TJ) TO-247AD Standard 2.5V @ 15V, 30A 480V, 30A, 4.7Ohm, 15V 110A 50ns 700µJ (off) 100nC 30ns/90ns
VRF154FL MOSFET RF PWR N-CH 50V 600W T2 Microchip Technology T2 80MHz 170V 4mA N-Channel T2 600W 17dB 50V 800mA
APT85GR120L IGBT 1200V 170A 962W TO264 Microchip Technology TO-264-3, TO-264AA 170A 1200V 962W Through Hole -55°C ~ 150°C (TJ) TO-264 Standard NPT 3.2V @ 15V, 85A 600V, 85A, 4.3Ohm, 15V 340A 6mJ (on), 3.8mJ (off) 660nC 43ns/300ns
JANTXV2N6760 MOSFET N-CH Microsemi Corporation TO-204AA, TO-3 Through Hole MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) TO-204AA (TO-3) N-Channel 4W (Ta), 75W (Tc) 400V 5.5A (Tc) 1.22Ohm @ 5.5A, 10V 10V 4V @ 250µA 39nC @ 10V ±20V Military, MIL-PRF-19500/542
FDWS9508L-F085 PMOS PWR56 40V 4.9 MOHM onsemi 8-PowerTDFN Surface Mount MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) 8-PQFN (5x6) P-Channel 214W (Tj) 40V 80A (Tc) 4.9mOhm @ 80A, 10V 4.5V, 10V 3V @ 250µA 107nC @ 10V 4840pF @ 20V ±16V Automotive, AEC-Q101, PowerTrench®
TIS97_D74Z TRANS NPN 40V 0.5A TO92-3 onsemi TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 500mA 40V 625mW Through Hole NPN -55°C ~ 150°C (TJ) TO-92-3 10nA (ICBO) 250 @ 100µA, 5V
2N5961_D27Z TRANS NPN 60V 0.1A TO92-3 onsemi TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 100mA 60V 625mW Through Hole NPN -55°C ~ 150°C (TJ) TO-92-3 200mV @ 500µA, 10mA 2nA (ICBO) 150 @ 10mA, 5V
HFA3128B96 HIGH FREQUENCY TRANSISTOR ARRAY Rochester Electronics, LLC
STW69N65M5 MOSFET N-CH 650V 58A TO-247 STMicroelectronics TO-247-3 Through Hole MOSFET (Metal Oxide) 150°C (TJ) TO-247 N-Channel 330W (Tc) 650V 58A (Tc) 45mOhm @ 29A, 10V 10V 5V @ 250µA 143nC @ 10V 6420pF @ 100V ±25V MDmesh™ V
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