-
- Configuration
- Current Rating (Amps)
- Transistor Type
- Technology
- Operating Temperature
- Supplier Device Package
- Input Type
- FET Type
- IGBT Type
- Resistor - Base (R1)
- Vce Saturation (Max) @ Ib, Ic
- Power - Output
- Current - Collector Cutoff (Max)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Frequency - Transition
- Gain
- Noise Figure
- Vce(on) (Max) @ Vge, Ic
- Input Capacitance (Cies) @ Vce
- Input
- Resistor - Emitter Base (R2)
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Test Condition
- Voltage - Test
- Current - Test
- Current - Collector Pulsed (Icm)
- Noise Figure (dB Typ @ f)
- Reverse Recovery Time (trr)
- NTC Thermistor
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Switching Energy
- Gate Charge
- Td (on/off) @ 25°C
- Voltage - Breakdown (V(BR)GSS)
- Current - Drain (Idss) @ Vds (Vgs=0)
- Voltage - Cutoff (VGS off) @ Id
- Resistance - RDS(On)
- Current Drain (Id) - Max
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Collector (Ic) (Max)
|
Voltage - Collector Emitter Breakdown (Max)
|
Power - Max
|
Mounting Type
|
Frequency
|
Voltage - Rated
|
Configuration
|
Current Rating (Amps)
|
Transistor Type
|
Technology
|
Operating Temperature
|
Supplier Device Package
|
Input Type
|
FET Type
|
IGBT Type
|
Resistor - Base (R1)
|
Vce Saturation (Max) @ Ib, Ic
|
Power - Output
|
Current - Collector Cutoff (Max)
|
DC Current Gain (hFE) (Min) @ Ic, Vce
|
Frequency - Transition
|
Gain
|
Noise Figure
|
Vce(on) (Max) @ Vge, Ic
|
Input Capacitance (Cies) @ Vce
|
Input
|
Resistor - Emitter Base (R2)
|
Power Dissipation (Max)
|
Drain to Source Voltage (Vdss)
|
Test Condition
|
Voltage - Test
|
Current - Test
|
Current - Collector Pulsed (Icm)
|
Noise Figure (dB Typ @ f)
|
Reverse Recovery Time (trr)
|
NTC Thermistor
|
Current - Continuous Drain (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Vgs (Max)
|
Switching Energy
|
Gate Charge
|
Td (on/off) @ 25°C
|
Voltage - Breakdown (V(BR)GSS)
|
Current - Drain (Idss) @ Vds (Vgs=0)
|
Voltage - Cutoff (VGS off) @ Id
|
Resistance - RDS(On)
|
Current Drain (Id) - Max
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| CGH40006S | RF MOSFET HEMT 28V 6QFN | Cree/Wolfspeed | 6-VDFN Exposed Pad | 0Hz ~ 6GHz | 84V | HEMT | 6-QFN-EP (3x3) | 8W | 12dB | 28V | 100mA | GaN | ||||||||||||||||||||||||||||||||||||||||||||
| CGH21240F | GAN HEMT 28V 1.8-2.1GHZ | Cree/Wolfspeed | 440117 | 1.8GHz ~ 2.3GHz | 84V | HEMT | 440117 | 240W | 15dB | 28V | 1A | GaN | ||||||||||||||||||||||||||||||||||||||||||||
| PTFB182503FL-V2-R250 | IC AMP RF LDMOS | Cree/Wolfspeed | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PXAC201202FC-V2-R250 | IC AMP RF LDMOS | Cree/Wolfspeed | H-37248-4 | 2.2GHz | 65V | LDMOS | H-37248-4 | 16W | 17dB | 28V | 240mA | |||||||||||||||||||||||||||||||||||||||||||||
| PTFB192503FL-V2-R0 | IC AMP RF LDMOS H-34288-4 | Cree/Wolfspeed | 2-Flatpack, Fin Leads, Flanged | 1.99GHz | 65V | LDMOS | H-34288-4/2 | 50W | 19dB | 30V | 1.9A | |||||||||||||||||||||||||||||||||||||||||||||
| PTFA192001E1V4XWSA1 | FET RF 65V 1.99GHZ H-36260-2 | Infineon Technologies | 2-Flatpack, Fin Leads | 1.99GHz | 65V | LDMOS | H-36260-2 | 50W | 15.9dB | 30V | 1.8A | |||||||||||||||||||||||||||||||||||||||||||||
| 375-102N12A-00 | RF MOSFET N-CHANNEL DE375 | IXYS-RF | 6-SMD, Flat Lead Exposed Pad | 1000V | 12A | N-Channel | DE375 | 940W | DE | |||||||||||||||||||||||||||||||||||||||||||||||
| BF1100R,215 | MOSFET N-CH 14V 30MA SOT143 | Rochester Electronics, LLC | SOT-143R | 800MHz | 14V | 30mA | N-Channel Dual Gate | SOT-143R | 2dB | 9V | 10mA | |||||||||||||||||||||||||||||||||||||||||||||
| EC4409C-TL-H | NCH 1.8V DRIVE SERIES | Rochester Electronics, LLC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF1205,115 | FET RF 10V 800MHZ 6TSSOP | Rochester Electronics, LLC | 6-TSSOP, SC-88, SOT-363 | 800MHz | 10V | 30mA | N-Channel Dual Gate | 6-TSSOP | 26dB | 1.2dB | 5V | 12mA | ||||||||||||||||||||||||||||||||||||||||||||
| MRF8P18265HSR5 | POWER, N-CHANNEL, MOSFET | Rochester Electronics, LLC | SOT-1110B | 1.88GHz | 65V | LDMOS | NI1230S-8 | 72W | 16dB | 30V | 800mA | |||||||||||||||||||||||||||||||||||||||||||||
| FC18G-TL | NCH J-FET+BIP NPN | Rochester Electronics, LLC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MCH6406-TL-E | NCH 4V DRIVE SERIES | Rochester Electronics, LLC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK937Y5-AA | NCH J-FET | Rochester Electronics, LLC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TF009F-AC | NCH J-FET | Rochester Electronics, LLC |
- 10
- 15
- 50
- 100