-
- Configuration
- Current Rating (Amps)
- Transistor Type
- Technology
- Operating Temperature
- Supplier Device Package
- Input Type
- FET Type
- IGBT Type
- Resistor - Base (R1)
- Vce Saturation (Max) @ Ib, Ic
- Power - Output
- Current - Collector Cutoff (Max)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Frequency - Transition
- Gain
- Noise Figure
- Vce(on) (Max) @ Vge, Ic
- Input Capacitance (Cies) @ Vce
- Input
- Resistor - Emitter Base (R2)
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Test Condition
- Voltage - Test
- Current - Test
- Current - Collector Pulsed (Icm)
- Noise Figure (dB Typ @ f)
- Reverse Recovery Time (trr)
- NTC Thermistor
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Switching Energy
- Gate Charge
- Td (on/off) @ 25°C
- Voltage - Breakdown (V(BR)GSS)
- Current - Drain (Idss) @ Vds (Vgs=0)
- Voltage - Cutoff (VGS off) @ Id
- Resistance - RDS(On)
- Current Drain (Id) - Max
- Series
Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Collector (Ic) (Max)
|
Voltage - Collector Emitter Breakdown (Max)
|
Power - Max
|
Mounting Type
|
Frequency
|
Voltage - Rated
|
Configuration
|
Current Rating (Amps)
|
Transistor Type
|
Technology
|
Operating Temperature
|
Supplier Device Package
|
Input Type
|
FET Type
|
IGBT Type
|
Resistor - Base (R1)
|
Vce Saturation (Max) @ Ib, Ic
|
Power - Output
|
Current - Collector Cutoff (Max)
|
DC Current Gain (hFE) (Min) @ Ic, Vce
|
Frequency - Transition
|
Gain
|
Noise Figure
|
Vce(on) (Max) @ Vge, Ic
|
Input Capacitance (Cies) @ Vce
|
Input
|
Resistor - Emitter Base (R2)
|
Power Dissipation (Max)
|
Drain to Source Voltage (Vdss)
|
Test Condition
|
Voltage - Test
|
Current - Test
|
Current - Collector Pulsed (Icm)
|
Noise Figure (dB Typ @ f)
|
Reverse Recovery Time (trr)
|
NTC Thermistor
|
Current - Continuous Drain (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Vgs (Max)
|
Switching Energy
|
Gate Charge
|
Td (on/off) @ 25°C
|
Voltage - Breakdown (V(BR)GSS)
|
Current - Drain (Idss) @ Vds (Vgs=0)
|
Voltage - Cutoff (VGS off) @ Id
|
Resistance - RDS(On)
|
Current Drain (Id) - Max
|
Series
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
BLC9G20LS-470AVTZ | RF FET LDMOS 65V 15.7DB SOT12583 | Ampleon USA Inc. | SOT-1258-3 | 1.81GHz ~ 1.88GHz | 65V | LDMOS (Dual), Common Source | DFM6 | 470W | 15.7dB | 28V | 400mA | |||||||||||||||||||||||||||||||||||||||||||||
CP216-2N4392-CM | JFET N-CH SWITCH CHOPPER | Central Semiconductor Corp | Die | Surface Mount | -65°C ~ 175°C (TJ) | Die | N-Channel | 14pF @ 20V | 40V | 2V @ 1A | 60 Ohms | |||||||||||||||||||||||||||||||||||||||||||||
BCX52TA | TRANS PNP 60V 1A SOT89-3 | Diodes Incorporated | TO-243AA | 1A | 60V | 1W | Surface Mount | PNP | -65°C ~ 150°C (TJ) | SOT-89-3 | 500mV @ 50mA, 500mA | 100nA (ICBO) | 40 @ 150mA, 2V | 150MHz | ||||||||||||||||||||||||||||||||||||||||||
ZXTP2012A | TRANS PNP 60V 3.5A TO92-3 | Diodes Incorporated | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC849CWH6327XTSA1 | TRANS NPN 30V 0.1A SOT323 | Infineon Technologies | SC-70, SOT-323 | 100mA | 30V | 250mW | Surface Mount | NPN | 150°C (TJ) | PG-SOT323 | 600mV @ 5mA, 100mA | 15nA (ICBO) | 420 @ 2mA, 5V | 250MHz | ||||||||||||||||||||||||||||||||||||||||||
IRL1404ZSPBF | MOSFET N-CH 40V 75A D2PAK | Infineon Technologies | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Surface Mount | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | D2PAK | N-Channel | 230W (Tc) | 40V | 75A (Tc) | 3.1mOhm @ 75A, 10V | 4.5V, 10V | 2.7V @ 250µA | 110nC @ 5V | 5080pF @ 25V | ±16V | HEXFET® | ||||||||||||||||||||||||||||||||||||||
IRGP50B60PDPBF | IGBT 600V 75A 370W TO247AC | Infineon Technologies | TO-247-3 | 75A | 600V | 370W | Through Hole | -55°C ~ 150°C (TJ) | TO-247AC | Standard | NPT | 2.6V @ 15V, 50A | 390V, 33A, 3.3Ohm, 15V | 150A | 50ns | 360µJ (on), 380µJ (off) | 240nC | 34ns/130ns | ||||||||||||||||||||||||||||||||||||||
IXGK82N120B3 | IGBT 1200V 230A 1250W TO264 | IXYS | TO-264-3, TO-264AA | 230A | 1200V | 1250W | Through Hole | -55°C ~ 150°C (TJ) | TO-264 (IXGK) | Standard | PT | 3.2V @ 15V, 82A | 600V, 80A, 2Ohm, 15V | 500A | 5mJ (on), 3.3mJ (off) | 350nC | 30ns/210ns | GenX3™ | ||||||||||||||||||||||||||||||||||||||
IXSN50N60BD2 | IGBT MOD 600V 75A 250W SOT227B | IXYS | SOT-227-4, miniBLOC | 75A | 600V | 250W | Chassis Mount | Single | -40°C ~ 150°C (TJ) | SOT-227B | 350µA | 2.5V @ 15V, 50A | 3.85nF @ 25V | Standard | No | |||||||||||||||||||||||||||||||||||||||||
JAN2N5662 | TRANS NPN 200V 2A TO5 | Microchip Technology | TO-205AA, TO-5-3 Metal Can | 2A | 200V | 1W | Through Hole | NPN | -65°C ~ 200°C (TJ) | TO-5 | 800mV @ 400mA, 2A | 200nA | 40 @ 500mA, 5V | Military, MIL-PRF-19500/454 | ||||||||||||||||||||||||||||||||||||||||||
APTGF180DU60TG | IGBT MODULE 600V 220A 833W SP4 | Microsemi Corporation | SP4 | 220A | 600V | 833W | Chassis Mount | Dual, Common Source | SP4 | NPT | 300µA | 2.5V @ 15V, 180A | 8.6nF @ 25V | Standard | Yes | |||||||||||||||||||||||||||||||||||||||||
NDS355AN_G | MOSFET N-CH 30V 1.7A SSOT3 | onsemi | TO-236-3, SC-59, SOT-23-3 | Surface Mount | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | SuperSOT-3 | N-Channel | 500mW (Ta) | 30V | 1.7A (Ta) | 85mOhm @ 1.9A, 10V | 4.5V, 10V | 2V @ 250µA | 5nC @ 5V | 195pF @ 15V | ±20V | |||||||||||||||||||||||||||||||||||||||
NVGS4141NT1G | MOSFET N-CH 30V 3.5A 6TSOP | onsemi | SOT-23-6 | Surface Mount | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | 6-TSOP | N-Channel | 500mW (Ta) | 30V | 3.5A (Ta) | 25mOhm @ 7A, 10V | 4.5V, 10V | 3V @ 250µA | 12nC @ 10V | 560pF @ 24V | ±20V | |||||||||||||||||||||||||||||||||||||||
UPA503T-T1-A | SMALL SIGNAL P-CHANNEL MOSFET | Renesas Electronics America Inc | TO-236-3, SC-59, SOT-23-3 | 300mW | Surface Mount | SC-59-5, Mini Mold | 2 P-Channel (Dual) | 50V | 100mA | Standard | 60Ohm @ 10mA, 10V | 2.5V @ 1µA | 17pF @ 5V | |||||||||||||||||||||||||||||||||||||||||||
BC847BU3HZGT106 | TRANS NPN 45V 0.1A UMT3 | Rohm Semiconductor | SC-70, SOT-323 | 100mA | 45V | 200mW | Surface Mount | NPN | 150°C (TJ) | UMT3 | 600mV @ 5mA, 100mA | 15nA (ICBO) | 200 @ 2mA, 5V | 200MHz | Automotive, AEC-Q101 |
- 10
- 15
- 50
- 100