-
- Configuration
- Current Rating (Amps)
- Transistor Type
- Technology
- Operating Temperature
- Supplier Device Package
- Input Type
- FET Type
- IGBT Type
- Resistor - Base (R1)
- Vce Saturation (Max) @ Ib, Ic
- Power - Output
- Current - Collector Cutoff (Max)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Frequency - Transition
- Gain
- Noise Figure
- Vce(on) (Max) @ Vge, Ic
- Input Capacitance (Cies) @ Vce
- Input
- Resistor - Emitter Base (R2)
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Test Condition
- Voltage - Test
- Current - Test
- Current - Collector Pulsed (Icm)
- Noise Figure (dB Typ @ f)
- Reverse Recovery Time (trr)
- NTC Thermistor
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Switching Energy
- Gate Charge
- Td (on/off) @ 25°C
- Voltage - Breakdown (V(BR)GSS)
- Current - Drain (Idss) @ Vds (Vgs=0)
- Voltage - Cutoff (VGS off) @ Id
- Resistance - RDS(On)
- Current Drain (Id) - Max
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Collector (Ic) (Max)
|
Voltage - Collector Emitter Breakdown (Max)
|
Power - Max
|
Mounting Type
|
Frequency
|
Voltage - Rated
|
Configuration
|
Current Rating (Amps)
|
Transistor Type
|
Technology
|
Operating Temperature
|
Supplier Device Package
|
Input Type
|
FET Type
|
IGBT Type
|
Resistor - Base (R1)
|
Vce Saturation (Max) @ Ib, Ic
|
Power - Output
|
Current - Collector Cutoff (Max)
|
DC Current Gain (hFE) (Min) @ Ic, Vce
|
Frequency - Transition
|
Gain
|
Noise Figure
|
Vce(on) (Max) @ Vge, Ic
|
Input Capacitance (Cies) @ Vce
|
Input
|
Resistor - Emitter Base (R2)
|
Power Dissipation (Max)
|
Drain to Source Voltage (Vdss)
|
Test Condition
|
Voltage - Test
|
Current - Test
|
Current - Collector Pulsed (Icm)
|
Noise Figure (dB Typ @ f)
|
Reverse Recovery Time (trr)
|
NTC Thermistor
|
Current - Continuous Drain (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Vgs (Max)
|
Switching Energy
|
Gate Charge
|
Td (on/off) @ 25°C
|
Voltage - Breakdown (V(BR)GSS)
|
Current - Drain (Idss) @ Vds (Vgs=0)
|
Voltage - Cutoff (VGS off) @ Id
|
Resistance - RDS(On)
|
Current Drain (Id) - Max
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PTVA092407NF-V1-R5 | IC RF LDMOS FET 4HBSOF | Cree/Wolfspeed | HBSOF-4-1 | 869MHz ~ 960MHz | 105V | 10µA | LDMOS | PG-HBSOF-4-1 | 240W | 22.5dB | 48V | 900mA | ||||||||||||||||||||||||||||||||||||||||||||
| SPN02N60S5 | MOSFET N-CH 600V 0.4A SOT-223 | Infineon Technologies | TO-261-4, TO-261AA | Surface Mount | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | PG-SOT223-4 | N-Channel | 1.8W (Ta) | 600V | 400mA (Ta) | 3Ohm @ 1.1A, 10V | 10V | 5.5V @ 80µA | 7.4nC @ 10V | 250pF @ 25V | ±20V | CoolMOS™ | ||||||||||||||||||||||||||||||||||||||
| IXYH20N120C3D1 | IGBT 1200V 36A 230W TO-247AD | IXYS | TO-247-3 | 36A | 1200V | 230W | Through Hole | -55°C ~ 150°C (TJ) | TO-247 (IXTH) | Standard | 3.4V @ 15V, 20A | 600V, 20A, 10Ohm, 15V | 88A | 195ns | 1.3mJ (on), 500µJ (off) | 53nC | 20ns/90ns | GenX3™, XPT™ | ||||||||||||||||||||||||||||||||||||||
| JANKCA2N2919 | TRANSISTOR DUAL SMALL-SIGNAL BJT | Microchip Technology | TO-78-6 Metal Can | 50mA | 60V | 350mW | Through Hole | 2 PNP (Dual) | -65°C ~ 200°C (TJ) | TO-78-6 | 300mV @ 100µA, 1mA | 10µA (ICBO) | 150 @ 1mA, 5V | Military, MIL-PRF-19500/355 | ||||||||||||||||||||||||||||||||||||||||||
| PMBT4401,215 | TRANS NPN 40V 0.6A TO236AB | Nexperia USA Inc. | TO-236-3, SC-59, SOT-23-3 | 600mA | 40V | 250mW | Surface Mount | NPN | 150°C (TJ) | TO-236AB | 750mV @ 50mA, 500mA | 50nA (ICBO) | 100 @ 150mA, 1V | 250MHz | ||||||||||||||||||||||||||||||||||||||||||
| NTE2382 | MOSFET-PWR N-CH HI SPEED | NTE Electronics, Inc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PHP78NQ03LT,127 | MOSFET N-CH 25V 75A TO220AB | NXP USA Inc. | TO-220-3 | Through Hole | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | TO-220AB | N-Channel | 93W (Tc) | 25V | 75A (Tc) | 9mOhm @ 25A, 10V | 5V, 10V | 2V @ 1mA | 13nC @ 5V | 1074pF @ 25V | ±20V | TrenchMOS™ | ||||||||||||||||||||||||||||||||||||||
| NSVMMUN2131LT1G | TRANS PREBIAS PNP 50V SOT23-3 | onsemi | TO-236-3, SC-59, SOT-23-3 | 100mA | 50V | 246mW | Surface Mount | PNP - Pre-Biased | SOT-23-3 (TO-236) | 2.2kOhms | 250mV @ 5mA, 10mA | 500nA | 8 @ 5mA, 10V | 2.2kOhms | ||||||||||||||||||||||||||||||||||||||||||
| FCP4N60 | MOSFET N-CH 600V 3.9A TO-220 | onsemi | TO-220-3 | Through Hole | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | TO-220-3 | N-Channel | 50W (Tc) | 600V | 3.9A (Tc) | 1.2Ohm @ 2A, 10V | 10V | 5V @ 250µA | 16.6nC @ 10V | 540pF @ 25V | ±30V | SuperFET™ | ||||||||||||||||||||||||||||||||||||||
| NSS60100DMTTBG | TRANS 2PNP 60V 1A | onsemi | 6-WDFN Exposed Pad | 1A | 60V | 2.27W | Surface Mount | 2 PNP (Dual) | -55°C ~ 150°C (TJ) | 6-WDFN (2x2) | 300mV @ 100mA, 1A | 100nA (ICBO) | 120 @ 500mA, 2V | 155MHz | ||||||||||||||||||||||||||||||||||||||||||
| XP0650100L | TRANS 2NPN 50V 0.1A SMINI6 | Panasonic Electronic Components | 6-TSSOP, SC-88, SOT-363 | 100mA | 50V | 150mW | Surface Mount | 2 NPN (Dual) | 150°C (TJ) | SMINI6-G1 | 300mV @ 10mA, 100mA | 100µA | 160 @ 2mA, 10V | 150MHz | ||||||||||||||||||||||||||||||||||||||||||
| IPW65R190E6FKSA1 | N-CHANNEL POWER MOSFET | Rochester Electronics, LLC | TO-247-3 | Through Hole | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | PG-TO247-3 | N-Channel | 151W (Tc) | 650V | 20.2A (Tc) | 190mOhm @ 7.3A, 10V | 10V | 3.5V @ 730µA | 73nC @ 10V | 1.62pF @ 100V | ±20V | CoolMOS™ | ||||||||||||||||||||||||||||||||||||||
| IRFD214 | MOSFET N-CH 250V 450MA 4-DIP | Vishay Siliconix | 4-DIP (0.300", 7.62mm) | Through Hole | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | 4-DIP, Hexdip, HVMDIP | N-Channel | 1W (Ta) | 250V | 450mA (Ta) | 2Ohm @ 270mA, 10V | 10V | 4V @ 250µA | 8.2nC @ 10V | 140pF @ 25V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SI4634DY-T1-E3 | MOSFET N-CH 30V 24.5A 8-SOIC | Vishay Siliconix | 8-SOIC (0.154", 3.90mm Width) | Surface Mount | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | 8-SO | N-Channel | 2.5W (Ta), 5.7W (Tc) | 30V | 24.5A (Tc) | 5.2mOhm @ 15A, 10V | 4.5V, 10V | 2.6V @ 250µA | 68nC @ 10V | 3150pF @ 15V | ±20V | TrenchFET® | ||||||||||||||||||||||||||||||||||||||
| IRF9640STRRPBF | MOSFET P-CH 200V 11A D2PAK | Vishay Siliconix | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Surface Mount | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | D2PAK | P-Channel | 125W (Tc) | 200V | 11A (Tc) | 500mOhm @ 6.6A, 10V | 10V | 4V @ 250µA | 44nC @ 10V | 1200pF @ 25V | ±20V |
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