• Configuration
    • Current Rating (Amps)
    • Transistor Type
    • Technology
    • Operating Temperature
    • Supplier Device Package
    • Input Type
    • FET Type
    • IGBT Type
    • Resistor - Base (R1)
    • Vce Saturation (Max) @ Ib, Ic
    • Power - Output
    • Current - Collector Cutoff (Max)
    • DC Current Gain (hFE) (Min) @ Ic, Vce
    • Frequency - Transition
    • Gain
    • Noise Figure
    • Vce(on) (Max) @ Vge, Ic
    • Input Capacitance (Cies) @ Vce
    • Input
    • Resistor - Emitter Base (R2)
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Test Condition
    • Voltage - Test
    • Current - Test
    • Current - Collector Pulsed (Icm)
    • Noise Figure (dB Typ @ f)
    • Reverse Recovery Time (trr)
    • NTC Thermistor
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Switching Energy
    • Gate Charge
    • Td (on/off) @ 25°C
    • Voltage - Breakdown (V(BR)GSS)
    • Current - Drain (Idss) @ Vds (Vgs=0)
    • Voltage - Cutoff (VGS off) @ Id
    • Resistance - RDS(On)
    • Current Drain (Id) - Max
    • Series
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List Table
Found: 94756
Partnumber Description Manufacturer
Package / Case
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Power - Max
Mounting Type
Frequency
Voltage - Rated
Configuration
Current Rating (Amps)
Transistor Type
Technology
Operating Temperature
Supplier Device Package
Input Type
FET Type
IGBT Type
Resistor - Base (R1)
Vce Saturation (Max) @ Ib, Ic
Power - Output
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency - Transition
Gain
Noise Figure
Vce(on) (Max) @ Vge, Ic
Input Capacitance (Cies) @ Vce
Input
Resistor - Emitter Base (R2)
Power Dissipation (Max)
Drain to Source Voltage (Vdss)
Test Condition
Voltage - Test
Current - Test
Current - Collector Pulsed (Icm)
Noise Figure (dB Typ @ f)
Reverse Recovery Time (trr)
NTC Thermistor
Current - Continuous Drain (Id) @ 25°C
FET Feature
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
Switching Energy
Gate Charge
Td (on/off) @ 25°C
Voltage - Breakdown (V(BR)GSS)
Current - Drain (Idss) @ Vds (Vgs=0)
Voltage - Cutoff (VGS off) @ Id
Resistance - RDS(On)
Current Drain (Id) - Max
Series
AOD2606 MOSFET N-CH 60V 46A TO252 Alpha & Omega Semiconductor Inc. TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) TO-252, (D-Pak) N-Channel 2.5W (Ta), 150W (Tc) 60V 14A (Ta), 46A (Tc) 6.8mOhm @ 20A, 10V 10V 3.5V @ 250µA 75nC @ 10V 4050pF @ 30V ±20V
CE3512K2 RF FET 4V 12GHZ 4MICROX CEL 4-Micro-X 12GHz 4V 15mA pHEMT FET 4-Micro-X 125mW 13.7dB 0.5dB 2V 10mA
KSC1674CYBU RF SMALL SIGNAL TRANSISTOR Fairchild Semiconductor TO-226-3, TO-92-3 (TO-226AA) 20mA 20V 250mW Through Hole NPN 150°C (TJ) TO-92-3 120 @ 1mA, 6V 600MHz 3dB ~ 5dB @ 100MHz
KST5087MTF-FS TRANS PNP 50V 0.05A SOT23 Fairchild Semiconductor TO-236-3, SC-59, SOT-23-3 50mA 50V 350mW Surface Mount PNP SOT-23 300mV @ 1mA, 10mA 50nA (ICBO) 250 @ 10mA, 5V 40MHz
FJV92MTF TRANS PNP 350V 0.5A SOT23-3 Fairchild Semiconductor TO-236-3, SC-59, SOT-23-3 500mA 350V Surface Mount PNP SOT-23-3 500mV @ 2mA, 20mA 250nA (ICBO) 40 @ 10mA, 10V 50MHz
IRL3303D1STRL MOSFET N-CH 30V 38A D2PAK Infineon Technologies TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Surface Mount MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) D2PAK N-Channel 68W (Tc) 30V 38A (Tc) 26mOhm @ 20A, 10V 4.5V, 10V 1V @ 250µA 26nC @ 4.5V 870pF @ 25V ±16V HEXFET®
BC 847B B5003 TRANS NPN 45V 0.1A SOT23 Infineon Technologies TO-236-3, SC-59, SOT-23-3 100mA 45V 330mW Surface Mount NPN 150°C (TJ) PG-SOT23 600mV @ 5mA, 100mA 15nA (ICBO) 200 @ 2mA, 5V 250MHz
JAN2N2604UB/TR TRANS PNP 60V 0.03A UB Microchip Technology 4-SMD, No Lead 30mA 60V 400mW Surface Mount PNP -65°C ~ 200°C (TJ) UB 300mV @ 500µA, 10mA 10nA 60 @ 500µA, 5V Military, MIL-PRF-19500/354
APTGT150DH120G IGBT MODULE 1200V 220A 690W SP6 Microchip Technology SP6 220A 1200V 690W Chassis Mount Asymmetrical Bridge SP6 Trench Field Stop 350µA 2.1V @ 15V, 150A 10.7nF @ 25V Standard No
2SD882-R-BP TRANS NPN 30V 3A TO126 Micro Commercial Co TO-225AA, TO-126-3 3A 30V 1.25W Through Hole NPN -55°C ~ 150°C (TJ) TO-126 500mV @ 200mA, 2A 1µA 60 @ 1A, 2V 50MHz
2N3791 TO-3 Microsemi Corporation
2N6292G TRANS NPN 70V 7A TO220 onsemi TO-220-3 7A 70V 40W Through Hole NPN -65°C ~ 150°C (TJ) TO-220 3.5V @ 3A, 7A 1mA 30 @ 2A, 4V 4MHz
CPH3205-TL-E TRANS NPN 50V 3A CPH3 onsemi
FQAF11N90 N-CHANNEL POWER MOSFET Rochester Electronics, LLC TO-3P-3 Full Pack Through Hole MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) TO-3PF N-Channel 120W (Tc) 900V 7.2A (Tc) 960mOhm @ 3.6A, 10V 10V 5V @ 250µA 94nC @ 10V 3.5pF @ 25V ±30V QFET®
2SJ328-Z-AZ P-CHANNEL POWER MOSFET Rochester Electronics, LLC
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