• Configuration
    • Current Rating (Amps)
    • Transistor Type
    • Technology
    • Operating Temperature
    • Supplier Device Package
    • Input Type
    • FET Type
    • IGBT Type
    • Resistor - Base (R1)
    • Vce Saturation (Max) @ Ib, Ic
    • Power - Output
    • Current - Collector Cutoff (Max)
    • DC Current Gain (hFE) (Min) @ Ic, Vce
    • Frequency - Transition
    • Gain
    • Noise Figure
    • Vce(on) (Max) @ Vge, Ic
    • Input Capacitance (Cies) @ Vce
    • Input
    • Resistor - Emitter Base (R2)
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Test Condition
    • Voltage - Test
    • Current - Test
    • Current - Collector Pulsed (Icm)
    • Noise Figure (dB Typ @ f)
    • Reverse Recovery Time (trr)
    • NTC Thermistor
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Switching Energy
    • Gate Charge
    • Td (on/off) @ 25°C
    • Voltage - Breakdown (V(BR)GSS)
    • Current - Drain (Idss) @ Vds (Vgs=0)
    • Voltage - Cutoff (VGS off) @ Id
    • Resistance - RDS(On)
    • Current Drain (Id) - Max
    • Series
  • 10
  • 15
  • 50
  • 100
List Table
Found: 94756
Partnumber Description Manufacturer
Package / Case
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Power - Max
Mounting Type
Frequency
Voltage - Rated
Configuration
Current Rating (Amps)
Transistor Type
Technology
Operating Temperature
Supplier Device Package
Input Type
FET Type
IGBT Type
Resistor - Base (R1)
Vce Saturation (Max) @ Ib, Ic
Power - Output
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency - Transition
Gain
Noise Figure
Vce(on) (Max) @ Vge, Ic
Input Capacitance (Cies) @ Vce
Input
Resistor - Emitter Base (R2)
Power Dissipation (Max)
Drain to Source Voltage (Vdss)
Test Condition
Voltage - Test
Current - Test
Current - Collector Pulsed (Icm)
Noise Figure (dB Typ @ f)
Reverse Recovery Time (trr)
NTC Thermistor
Current - Continuous Drain (Id) @ 25°C
FET Feature
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
Switching Energy
Gate Charge
Td (on/off) @ 25°C
Voltage - Breakdown (V(BR)GSS)
Current - Drain (Idss) @ Vds (Vgs=0)
Voltage - Cutoff (VGS off) @ Id
Resistance - RDS(On)
Current Drain (Id) - Max
Series
IRF3805PBF MOSFET N-CH 55V 75A TO-220AB Infineon Technologies TO-220-3 Through Hole MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) TO-220AB N-Channel 300W (Tc) 55V 75A (Tc) 3.3mOhm @ 75A, 10V 10V 4V @ 250µA 290nC @ 10V 7960pF @ 25V ±20V HEXFET®
FS10R12VT3BOMA1 IGBT MODULE 1200V 16A 64W Infineon Technologies Module 16A 1200V 64W Chassis Mount Three Phase Inverter -40°C ~ 125°C Module 1mA 2.45V @ 15V, 10A 700pF @ 25V Standard No
BUZ73HXKSA1 MOSFET N-CH 200V 7A TO220-3 Infineon Technologies TO-220-3 Through Hole MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) PG-TO220-3 N-Channel 40W (Tc) 200V 7A (Tc) 400mOhm @ 4.5A, 10V 10V 4V @ 1mA 530pF @ 25V ±20V SIPMOS®
IXTX3N250L MOSFET DISCRETE TO-247P IXYS TO-247-3 Through Hole MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) PLUS247™-3 N-Channel 417W (Tc) 2500V 3A (Tc) 10Ohm @ 1.5A, 10V 10V 5V @ 1mA 230nC @ 10V 5400pF @ 25V ±20V
JANSR2N4449 RH SMALL-SIGNAL BJT Microchip Technology
DTA124ECA-TP TRANS PREBIAS PNP 200MW SOT23 Micro Commercial Co TO-236-3, SC-59, SOT-23-3 100mA 50V 200mW Surface Mount PNP - Pre-Biased SOT-23 22kOhms 300mV @ 500µA, 10mA 500nA 56 @ 5mA, 5V 250MHz 22kOhms
BSS123-TP N-CHANNELMOSFETSOT-23 Micro Commercial Co TO-236-3, SC-59, SOT-23-3 Surface Mount MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) SOT-23 N-Channel 350mW 100V 170mA 6Ohm @ 170mA, 10V 4.5V, 10V 2.8V @ 250µA 2nC @ 10V 60pF @ 25V ±20V
IRF620B_FP001 MOSFET N-CH 200V 5A TO-220 onsemi TO-220-3 Through Hole MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) TO-220-3 N-Channel 47W (Tc) 200V 5A (Tc) 800mOhm @ 2.5A, 10V 10V 4V @ 250µA 16nC @ 10V 390pF @ 25V ±30V
NSBA124EDXV6T5 SMALL SIGNAL BIPOLAR TRANSISTOR onsemi
PN3569_D26Z TRANS NPN 40V 0.5A TO92-3 onsemi TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 500mA 40V 625mW Through Hole NPN -55°C ~ 150°C (TJ) TO-92-3 250mV @ 15mA, 150mA 50nA (ICBO) 100 @ 150mA, 1V
RGS30TSX2GC11 10US SHORT-CIRCUIT TOLERANCE, 12 Rohm Semiconductor TO-247-3 30A 1200V 267W Through Hole -40°C ~ 175°C (TJ) TO-247N Standard Trench Field Stop 2.1V @ 15V, 15A 600V, 15A, 10Ohm, 15V 45A 740µJ (on), 600µJ (off) 41nC 30ns/70ns
RF4C100BCTCR PCH -20V -10A MIDDLE POWER MOSFE Rohm Semiconductor 8-PowerUDFN Surface Mount MOSFET (Metal Oxide) 150°C (TJ) HUML2020L8 P-Channel 2W (Ta) 20V 10A (Ta) 15.6mOhm @ 10A, 4.5V 1.8V, 4.5V 1.2V @ 1mA 23.5nC @ 4.5V 1660pF @ 10V ±8V
EMH2FHAT2R NPN+NPN DIGITAL TRANSISTOR (CORR Rohm Semiconductor SOT-563, SOT-666 100mA 50V 150mW Surface Mount 2 NPN - Pre-Biased (Dual) EMT6 47kOhms 300mV @ 500µA, 10mA 500nA 68 @ 5mA, 5V 250MHz 47kOhms Automotive, AEC-Q101
IRLZ24STRR MOSFET N-CH 60V 17A D2PAK Vishay Siliconix TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Surface Mount MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) D2PAK N-Channel 3.7W (Ta), 60W (Tc) 60V 17A (Tc) 100mOhm @ 10A, 5V 4V, 5V 2V @ 250µA 18nC @ 5V 870pF @ 25V ±10V
SI2303BDS-T1-E3 MOSFET P-CH 30V 1.49A SOT23-3 Vishay Siliconix TO-236-3, SC-59, SOT-23-3 Surface Mount MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) SOT-23-3 (TO-236) P-Channel 700mW (Ta) 30V 1.49A (Ta) 200mOhm @ 1.7A, 10V 4.5V, 10V 3V @ 250µA 10nC @ 10V 180pF @ 15V ±20V
  • 10
  • 15
  • 50
  • 100