• Configuration
    • Current Rating (Amps)
    • Transistor Type
    • Technology
    • Operating Temperature
    • Supplier Device Package
    • Input Type
    • FET Type
    • IGBT Type
    • Resistor - Base (R1)
    • Vce Saturation (Max) @ Ib, Ic
    • Power - Output
    • Current - Collector Cutoff (Max)
    • DC Current Gain (hFE) (Min) @ Ic, Vce
    • Frequency - Transition
    • Gain
    • Noise Figure
    • Vce(on) (Max) @ Vge, Ic
    • Input Capacitance (Cies) @ Vce
    • Input
    • Resistor - Emitter Base (R2)
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Test Condition
    • Voltage - Test
    • Current - Test
    • Current - Collector Pulsed (Icm)
    • Noise Figure (dB Typ @ f)
    • Reverse Recovery Time (trr)
    • NTC Thermistor
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Switching Energy
    • Gate Charge
    • Td (on/off) @ 25°C
    • Voltage - Breakdown (V(BR)GSS)
    • Current - Drain (Idss) @ Vds (Vgs=0)
    • Voltage - Cutoff (VGS off) @ Id
    • Resistance - RDS(On)
    • Current Drain (Id) - Max
    • Series
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List Table
Found: 94756
Partnumber Description Manufacturer
Package / Case
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Power - Max
Mounting Type
Frequency
Voltage - Rated
Configuration
Current Rating (Amps)
Transistor Type
Technology
Operating Temperature
Supplier Device Package
Input Type
FET Type
IGBT Type
Resistor - Base (R1)
Vce Saturation (Max) @ Ib, Ic
Power - Output
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency - Transition
Gain
Noise Figure
Vce(on) (Max) @ Vge, Ic
Input Capacitance (Cies) @ Vce
Input
Resistor - Emitter Base (R2)
Power Dissipation (Max)
Drain to Source Voltage (Vdss)
Test Condition
Voltage - Test
Current - Test
Current - Collector Pulsed (Icm)
Noise Figure (dB Typ @ f)
Reverse Recovery Time (trr)
NTC Thermistor
Current - Continuous Drain (Id) @ 25°C
FET Feature
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
Switching Energy
Gate Charge
Td (on/off) @ 25°C
Voltage - Breakdown (V(BR)GSS)
Current - Drain (Idss) @ Vds (Vgs=0)
Voltage - Cutoff (VGS off) @ Id
Resistance - RDS(On)
Current Drain (Id) - Max
Series
DMTH8012LK3Q-13 MOSFET NCH 80V 50A TO252 Diodes Incorporated TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) TO-252, (D-Pak) N-Channel 2.6W (Ta) 80V 50A (Tc) 16mOhm @ 12A, 10V 4.5V, 10V 3V @ 250µA 46.8nC @ 10V 2051pF @ 40V ±20V Automotive, AEC-Q101
PTFA190451FV4R250XTMA1 IC FET RF LDMOS 45W H-37265-2 Infineon Technologies 2-Flatpack, Fin Leads, Flanged 1.96GHz 65V 10µA LDMOS H-37265-2 11W 17.5dB 28V 450mA
BC80725E6327HTSA1 TRANS PNP 45V 0.5A SOT23 Infineon Technologies TO-236-3, SC-59, SOT-23-3 500mA 45V 330mW Surface Mount PNP 150°C (TJ) PG-SOT23 700mV @ 50mA, 500mA 100nA (ICBO) 160 @ 100mA, 1V 200MHz
JANTXV2N3506AU4 TRANS NPN 40V 1UA U4 Microchip Technology 3-SMD, No Lead 1 µA 40V 1W Surface Mount NPN -65°C ~ 200°C (TJ) U4 1.5V @ 250mA, 2.5A 1µA 50 @ 500mA, 1V Military, MIL-PRF-19500/349
APTGT20H60T3G IGBT MODULE 600V 32A 62W SP3 Microsemi Corporation SP3 32A 600V 62W Chassis Mount Full Bridge Inverter -40°C ~ 175°C (TJ) SP3 Trench Field Stop 250µA 1.9V @ 15V, 20A 1.1nF @ 25V Standard Yes
JANTXV2N3019S TRANS NPN 80V 1A Microsemi Corporation TO-205AD, TO-39-3 Metal Can 1A 80V 800mW Through Hole NPN -65°C ~ 200°C (TJ) TO-39 500mV @ 50mA, 500mA 10nA 50 @ 500mA, 10V Military, MIL-PRF-19500/391
BCP54-16,115 TRANS NPN 45V 1A SOT223 Nexperia USA Inc. TO-261-4, TO-261AA 1A 45V 960mW Surface Mount NPN 150°C (TJ) SOT-223 500mV @ 50mA, 500mA 100nA (ICBO) 100 @ 150mA, 2V 180MHz
PDTD113ZU135 PDTD113ZU - 0.5A, 50V, NPN Nexperia USA Inc.
PHP225,118-NXP SMALL SIGNAL FIELD-EFFECT TRANSI NXP USA Inc.
NGTB75N65FL2WG IGBT TRENCH/FS 650V 100A TO247 onsemi TO-247-3 100A 650V 595W Through Hole -55°C ~ 175°C (TJ) TO-247-3 Standard Trench Field Stop 2V @ 15V, 75A 400V, 75A, 10Ohm, 15V 200A 80ns 1.5mJ (on), 1mJ (off) 310nC 110ns/270ns
2SC13830S TRANS NPN 25V 1A TO92L-A1 Panasonic Electronic Components TO-226-3, TO-92-3 Long Body 1A 25V 1W Through Hole NPN 150°C (TJ) TO-92L-A1 400mV @ 50mA, 500mA 100nA (ICBO) 170 @ 500mA, 10V 200MHz
2SK304E-SPA NCH J-FET Rochester Electronics, LLC
STB40N20 MOSFET N-CH 200V 40A D2PAK STMicroelectronics TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Surface Mount MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) D2PAK N-Channel 160W (Tc) 200V 40A (Tc) 45mOhm @ 20A, 10V 10V 4V @ 250µA 75nC @ 10V 2500pF @ 25V ±20V STripFET™
RN2105CT(TPL3) TRANS PREBIAS PNP 20V 0.05A CST3 Toshiba Semiconductor and Storage SC-101, SOT-883 50mA 20V 50mW Surface Mount PNP - Pre-Biased CST3 2.2kOhms 150mV @ 250µA, 5mA 500nA 120 @ 10mA, 5V 47kOhms
SI7164DP-T1-GE3 MOSFET N-CH 60V 60A PPAK SO-8 Vishay Siliconix PowerPAK® SO-8 Surface Mount MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) PowerPAK® SO-8 N-Channel 6.25W (Ta), 104W (Tc) 60V 60A (Tc) 6.25mOhm @ 10A, 10V 10V 4.5V @ 250µA 75nC @ 10V 2830pF @ 30V ±20V TrenchFET®
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