• Configuration
    • Current Rating (Amps)
    • Transistor Type
    • Technology
    • Operating Temperature
    • Supplier Device Package
    • Input Type
    • FET Type
    • IGBT Type
    • Resistor - Base (R1)
    • Vce Saturation (Max) @ Ib, Ic
    • Power - Output
    • Current - Collector Cutoff (Max)
    • DC Current Gain (hFE) (Min) @ Ic, Vce
    • Frequency - Transition
    • Gain
    • Noise Figure
    • Vce(on) (Max) @ Vge, Ic
    • Input Capacitance (Cies) @ Vce
    • Input
    • Resistor - Emitter Base (R2)
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Test Condition
    • Voltage - Test
    • Current - Test
    • Current - Collector Pulsed (Icm)
    • Noise Figure (dB Typ @ f)
    • Reverse Recovery Time (trr)
    • NTC Thermistor
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Switching Energy
    • Gate Charge
    • Td (on/off) @ 25°C
    • Voltage - Breakdown (V(BR)GSS)
    • Current - Drain (Idss) @ Vds (Vgs=0)
    • Voltage - Cutoff (VGS off) @ Id
    • Resistance - RDS(On)
    • Current Drain (Id) - Max
    • Series
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List Table
Found: 94756
Partnumber Description Manufacturer
Package / Case
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Power - Max
Mounting Type
Frequency
Voltage - Rated
Configuration
Current Rating (Amps)
Transistor Type
Technology
Operating Temperature
Supplier Device Package
Input Type
FET Type
IGBT Type
Resistor - Base (R1)
Vce Saturation (Max) @ Ib, Ic
Power - Output
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency - Transition
Gain
Noise Figure
Vce(on) (Max) @ Vge, Ic
Input Capacitance (Cies) @ Vce
Input
Resistor - Emitter Base (R2)
Power Dissipation (Max)
Drain to Source Voltage (Vdss)
Test Condition
Voltage - Test
Current - Test
Current - Collector Pulsed (Icm)
Noise Figure (dB Typ @ f)
Reverse Recovery Time (trr)
NTC Thermistor
Current - Continuous Drain (Id) @ 25°C
FET Feature
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
Switching Energy
Gate Charge
Td (on/off) @ 25°C
Voltage - Breakdown (V(BR)GSS)
Current - Drain (Idss) @ Vds (Vgs=0)
Voltage - Cutoff (VGS off) @ Id
Resistance - RDS(On)
Current Drain (Id) - Max
Series
AO7800 MOSFET 2N-CH 20V SC70-6 Alpha & Omega Semiconductor Inc. 6-TSSOP, SC-88, SOT-363 300mW Surface Mount -55°C ~ 150°C (TJ) SC-70-6 2 N-Channel (Dual) 20V 900mA Logic Level Gate 300mOhm @ 900mA, 4.5V 900mV @ 250µA 1.9nC @ 4.5V 120pF @ 10V
ZVP1320ASTOA MOSFET P-CH 200V 0.07A TO92-3 Diodes Incorporated E-Line-3 Through Hole MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) E-Line (TO-92 compatible) P-Channel 625mW (Ta) 200V 70mA (Ta) 80Ohm @ 50mA, 10V 10V 3.5V @ 1mA 50pF @ 25V ±20V
ZXMN10A25GTA MOSFET N-CH 100V 2.9A SOT223 Diodes Incorporated TO-261-4, TO-261AA Surface Mount MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) SOT-223 N-Channel 2W (Ta) 100V 2.9A (Ta) 125mOhm @ 2.9A, 10V 10V 4V @ 250µA 17nC @ 10V 859pF @ 50V ±20V
DMN3013LFG-13 MOSFET BVDSS: 25V-30V POWERDI333 Diodes Incorporated 8-PowerLDFN 2.16W (Ta) Surface Mount -55°C ~ 150°C (TJ) PowerDI3333-8 (Type D) 2 N-Channel (Dual) 30V 9.5A (Ta), 15A (Tc) Standard 14.3mOhm @ 4A, 8V 1.2V @ 250µA 5.7nC @ 4.5V 600pF @ 15V
NZT749 TRANS PNP 25V 4A SOT223-4 Fairchild Semiconductor TO-261-4, TO-261AA 4A 25V 1.2W Surface Mount PNP -55°C ~ 150°C (TJ) SOT-223-4 300mV @ 100mA, 1A 100nA (ICBO) 80 @ 1A, 2V 75MHz
APTGT50TA60PG IGBT MODULE 600V 80A 176W SP6P Microchip Technology SP6 80A 600V 176W Chassis Mount Three Phase -40°C ~ 175°C (TJ) SP6-P Trench Field Stop 250µA 1.9V @ 15V, 50A 3.15nF @ 25V Standard No
SMP3003-DL-1EX MOSFET P-CH 75V 100A SMP-FD onsemi
DMA561070R TRANS PREBIAS DUAL PNP SMINI5 Panasonic Electronic Components 5-SMD, Flat Leads 100mA 50V 150mW Surface Mount 2 PNP - Pre-Biased (Dual) SMini5-F3-B 22kOhms 250mV @ 500µA, 10mA 500nA 160 @ 5mA, 10V
FQNL1N50BBU N-CHANNEL POWER MOSFET Rochester Electronics, LLC TO-226-3, TO-92-3 Long Body (Formed Leads) Through Hole MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) TO-92-3 N-Channel 1.5W (Tc) 500V 270mA (Tc) 9Ohm @ 135mA, 10V 10V 3.7V @ 250µA 5.5nC @ 10V 150pF @ 25V ±30V QFET®
BDP947E6327 GENERAL PURPOSE TRANSISTOR Rochester Electronics, LLC
MPS2907AG SMALL SIGNAL BIPOLAR TRANSISTOR Rochester Electronics, LLC TO-226-3, TO-92-3 (TO-226AA) 600mA 60V 625mW Through Hole PNP -55°C ~ 150°C (TJ) TO-92-3 1.6V @ 50mA, 500mA 10nA (ICBO) 100 @ 150mA, 10V 200MHz
SP8K33TB1 MOSFET 2N-CH 60V 8SOP Rohm Semiconductor
STL100N6LF6 MOSFET N CH 60V 100A PWRFLAT 5X6 STMicroelectronics 8-PowerVDFN Surface Mount MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) PowerFlat™ (5x6) N-Channel 4.8W (Tc) 60V 100A (Tc) 4.5mOhm @ 11A, 10V 4.5V, 10V 2.5V @ 250µA 130nC @ 10V 8900pF @ 25V ±20V DeepGATE™, STripFET™ VI
ULN2067B TRANS 4NPN DARL 80V 1.75A 16DIP STMicroelectronics 16-PowerDIP (0.300", 7.62mm) 1.75A 80V 1W Through Hole 4 NPN Darlington (Quad) -20°C ~ 85°C (TA) 16-PowerDIP (20x7.10) 1.5V @ 2.25mA, 1.5A
IRLI540GPBF MOSFET N-CH 100V 17A TO220FP Vishay Siliconix TO-220-3 Full Pack, Isolated Tab Through Hole MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) TO-220-3 N-Channel 48W (Tc) 100V 17A (Tc) 77mOhm @ 10A, 5V 4V, 5V 2V @ 250µA 64nC @ 5V 2200pF @ 25V ±10V
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