-
- Configuration
- Current Rating (Amps)
- Transistor Type
- Technology
- Operating Temperature
- Supplier Device Package
- Input Type
- FET Type
- IGBT Type
- Resistor - Base (R1)
- Vce Saturation (Max) @ Ib, Ic
- Power - Output
- Current - Collector Cutoff (Max)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Frequency - Transition
- Gain
- Noise Figure
- Vce(on) (Max) @ Vge, Ic
- Input Capacitance (Cies) @ Vce
- Input
- Resistor - Emitter Base (R2)
- Power Dissipation (Max)
- Drain to Source Voltage (Vdss)
- Test Condition
- Voltage - Test
- Current - Test
- Current - Collector Pulsed (Icm)
- Noise Figure (dB Typ @ f)
- Reverse Recovery Time (trr)
- NTC Thermistor
- Current - Continuous Drain (Id) @ 25°C
- FET Feature
- Rds On (Max) @ Id, Vgs
- Drive Voltage (Max Rds On, Min Rds On)
- Vgs(th) (Max) @ Id
- Gate Charge (Qg) (Max) @ Vgs
- Input Capacitance (Ciss) (Max) @ Vds
- Vgs (Max)
- Switching Energy
- Gate Charge
- Td (on/off) @ 25°C
- Voltage - Breakdown (V(BR)GSS)
- Current - Drain (Idss) @ Vds (Vgs=0)
- Voltage - Cutoff (VGS off) @ Id
- Resistance - RDS(On)
- Current Drain (Id) - Max
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Collector (Ic) (Max)
|
Voltage - Collector Emitter Breakdown (Max)
|
Power - Max
|
Mounting Type
|
Frequency
|
Voltage - Rated
|
Configuration
|
Current Rating (Amps)
|
Transistor Type
|
Technology
|
Operating Temperature
|
Supplier Device Package
|
Input Type
|
FET Type
|
IGBT Type
|
Resistor - Base (R1)
|
Vce Saturation (Max) @ Ib, Ic
|
Power - Output
|
Current - Collector Cutoff (Max)
|
DC Current Gain (hFE) (Min) @ Ic, Vce
|
Frequency - Transition
|
Gain
|
Noise Figure
|
Vce(on) (Max) @ Vge, Ic
|
Input Capacitance (Cies) @ Vce
|
Input
|
Resistor - Emitter Base (R2)
|
Power Dissipation (Max)
|
Drain to Source Voltage (Vdss)
|
Test Condition
|
Voltage - Test
|
Current - Test
|
Current - Collector Pulsed (Icm)
|
Noise Figure (dB Typ @ f)
|
Reverse Recovery Time (trr)
|
NTC Thermistor
|
Current - Continuous Drain (Id) @ 25°C
|
FET Feature
|
Rds On (Max) @ Id, Vgs
|
Drive Voltage (Max Rds On, Min Rds On)
|
Vgs(th) (Max) @ Id
|
Gate Charge (Qg) (Max) @ Vgs
|
Input Capacitance (Ciss) (Max) @ Vds
|
Vgs (Max)
|
Switching Energy
|
Gate Charge
|
Td (on/off) @ 25°C
|
Voltage - Breakdown (V(BR)GSS)
|
Current - Drain (Idss) @ Vds (Vgs=0)
|
Voltage - Cutoff (VGS off) @ Id
|
Resistance - RDS(On)
|
Current Drain (Id) - Max
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DMN60H080DS-13 | MOSFET N-CH 600V 80MA SOT23 | Diodes Incorporated | TO-236-3, SC-59, SOT-23-3 | Surface Mount | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | SOT-23-3 | N-Channel | 1.1W (Ta) | 600V | 80mA (Ta) | 100Ohm @ 60mA, 10V | 4.5V, 10V | 3V @ 250µA | 1.7nC @ 10V | 25pF @ 25V | ±20V | |||||||||||||||||||||||||||||||||||||||
| 2N5552-1 | TRANS 80V 10A TO5 | General Semiconductor | TO-205AA, TO-5-3 Metal Can | 10A | 80V | 15W | Through Hole | TO-5 | 500mV @ 500mA, 5A | 50 @ 5A, 2V | 30MHz | |||||||||||||||||||||||||||||||||||||||||||||
| HGTP10N50E1D | 17.5A, 500V, N-CHANNEL IGBT | Harris Corporation | TO-220-3 | 17.5 A | 500V | 75W | Through Hole | -55°C ~ 150°C (TJ) | TO-220 | Standard | 3.2V @ 20V, 17.5A | 19nC | ||||||||||||||||||||||||||||||||||||||||||||
| SPB100N03S2-03 G | MOSFET N-CH 30V 100A D2PAK | Infineon Technologies | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Surface Mount | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | PG-TO263-3-2 | N-Channel | 300W (Tc) | 30V | 100A (Tc) | 3mOhm @ 80A, 10V | 10V | 4V @ 250µA | 150nC @ 10V | 7020pF @ 25V | ±20V | OptiMOS™ | ||||||||||||||||||||||||||||||||||||||
| IPP80N06S3L-08 | MOSFET N-CH 55V 80A TO-220 | Infineon Technologies | TO-220-3 | Through Hole | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | PG-TO220-3-1 | N-Channel | 105W (Tc) | 55V | 80A (Tc) | 7.9mOhm @ 43A, 10V | 5V, 10V | 2.2V @ 55µA | 134nC @ 10V | 6475pF @ 25V | ±16V | OptiMOS™ | ||||||||||||||||||||||||||||||||||||||
| MPSA42,126 | TRANS NPN 300V 0.1A TO92-3 | NXP USA Inc. | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 100mA | 300V | 500mW | Through Hole | NPN | 150°C (TJ) | TO-92-3 | 500mV @ 2mA, 20mA | 100nA (ICBO) | 40 @ 30mA, 10V | 50MHz | ||||||||||||||||||||||||||||||||||||||||||
| FQPF9N50CYDTU | MOSFET N-CH 500V 9A TO-220F | onsemi | TO-220-3 Full Pack, Formed Leads | Through Hole | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | TO-220F-3 (Y-Forming) | N-Channel | 44W (Tc) | 500V | 9A (Tc) | 800mOhm @ 4.5A, 10V | 10V | 4V @ 250µA | 35nC @ 10V | 1030pF @ 25V | ±30V | QFET® | ||||||||||||||||||||||||||||||||||||||
| QPD1008L | RF TRANSISTOR 125W 50V NI-360 | RFMD | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK3617-S-TL-E | NCH 4V DRIVE SERIES | Rochester Electronics, LLC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MJD243T4 | POWER BIPOLAR TRANSISTOR, NPN | Rochester Electronics, LLC | TO-252-3, DPak (2 Leads + Tab), SC-63 | 4A | 100V | 12.5W | Surface Mount | NPN | -65°C ~ 150°C (TJ) | DPAK | 300mV @ 50mA, 500mA | 40 @ 200mA, 1V | 40MHz | |||||||||||||||||||||||||||||||||||||||||||
| 2SB1508R | PNP SILICON TRANSISTOR | Rochester Electronics, LLC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BCM847DS/DG/B2 115 | SMALL SIGNAL BIPOLAR TRANSISTOR | Rochester Electronics, LLC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BCW60CE6327 | SMALL SIGNAL BIPOLAR TRANSISTOR | Rochester Electronics, LLC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STB6N60M2 | MOSFET N-CH 600V D2PAK | STMicroelectronics | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Surface Mount | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | D2PAK | N-Channel | 60W (Tc) | 600V | 4.5A (Tc) | 1.2Ohm @ 2.25A, 10V | 10V | 4V @ 250µA | 8nC @ 10V | 232pF @ 100V | ±25V | MDmesh™ II Plus | ||||||||||||||||||||||||||||||||||||||
| SSM3J35AMFV,L3F | X34 SMALL LOW ON RESISTANCE PCH | Toshiba Semiconductor and Storage | SOT-723 | Surface Mount | MOSFET (Metal Oxide) | 150°C | VESM | P-Channel | 150mW (Ta) | 20V | 250mA (Ta) | 1.4Ohm @ 150mA, 4.5V | 1.2V, 4.5V | 1V @ 100µA | 42pF @ 10V | ±10V | U-MOSVII |
- 10
- 15
- 50
- 100