• Configuration
    • Current Rating (Amps)
    • Transistor Type
    • Technology
    • Operating Temperature
    • Supplier Device Package
    • Input Type
    • FET Type
    • IGBT Type
    • Resistor - Base (R1)
    • Vce Saturation (Max) @ Ib, Ic
    • Power - Output
    • Current - Collector Cutoff (Max)
    • DC Current Gain (hFE) (Min) @ Ic, Vce
    • Frequency - Transition
    • Gain
    • Noise Figure
    • Vce(on) (Max) @ Vge, Ic
    • Input Capacitance (Cies) @ Vce
    • Input
    • Resistor - Emitter Base (R2)
    • Power Dissipation (Max)
    • Drain to Source Voltage (Vdss)
    • Test Condition
    • Voltage - Test
    • Current - Test
    • Current - Collector Pulsed (Icm)
    • Noise Figure (dB Typ @ f)
    • Reverse Recovery Time (trr)
    • NTC Thermistor
    • Current - Continuous Drain (Id) @ 25°C
    • FET Feature
    • Rds On (Max) @ Id, Vgs
    • Drive Voltage (Max Rds On, Min Rds On)
    • Vgs(th) (Max) @ Id
    • Gate Charge (Qg) (Max) @ Vgs
    • Input Capacitance (Ciss) (Max) @ Vds
    • Vgs (Max)
    • Switching Energy
    • Gate Charge
    • Td (on/off) @ 25°C
    • Voltage - Breakdown (V(BR)GSS)
    • Current - Drain (Idss) @ Vds (Vgs=0)
    • Voltage - Cutoff (VGS off) @ Id
    • Resistance - RDS(On)
    • Current Drain (Id) - Max
    • Series
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List Table
Found: 94756
Partnumber Description Manufacturer
Package / Case
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Power - Max
Mounting Type
Frequency
Voltage - Rated
Configuration
Current Rating (Amps)
Transistor Type
Technology
Operating Temperature
Supplier Device Package
Input Type
FET Type
IGBT Type
Resistor - Base (R1)
Vce Saturation (Max) @ Ib, Ic
Power - Output
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency - Transition
Gain
Noise Figure
Vce(on) (Max) @ Vge, Ic
Input Capacitance (Cies) @ Vce
Input
Resistor - Emitter Base (R2)
Power Dissipation (Max)
Drain to Source Voltage (Vdss)
Test Condition
Voltage - Test
Current - Test
Current - Collector Pulsed (Icm)
Noise Figure (dB Typ @ f)
Reverse Recovery Time (trr)
NTC Thermistor
Current - Continuous Drain (Id) @ 25°C
FET Feature
Rds On (Max) @ Id, Vgs
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
Switching Energy
Gate Charge
Td (on/off) @ 25°C
Voltage - Breakdown (V(BR)GSS)
Current - Drain (Idss) @ Vds (Vgs=0)
Voltage - Cutoff (VGS off) @ Id
Resistance - RDS(On)
Current Drain (Id) - Max
Series
AOTF4126 MOSFET N-CH 100V 6A TO220F Alpha & Omega Semiconductor Inc. TO-220-3 Full Pack Through Hole MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) TO-220-3F N-Channel 2.1W (Ta), 42W (Tc) 100V 6A (Ta), 27A (Tc) 24mOhm @ 20A, 10V 7V, 10V 4V @ 250µA 42nC @ 10V 2200pF @ 50V ±25V SDMOS™
IRF7494TR MOSFET N-CH 150V 5.2A 8-SOIC Infineon Technologies 8-SOIC (0.154", 3.90mm Width) Surface Mount MOSFET (Metal Oxide) 8-SO N-Channel 150V 5.2A (Ta) 44mOhm @ 3.1A, 10V 4V @ 250µA 54nC @ 10V 1750pF @ 25V HEXFET®
2N3490 POWER BJT Microchip Technology
2N4036L SMALL-SIGNAL BJT Microchip Technology
APT56M60B2 MOSFET N-CH 600V 56A T-MAX Microsemi Corporation TO-247-3 Variant Through Hole MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) TO-247 [B] N-Channel 1040W (Tc) 600V 60A (Tc) 130mOhm @ 28A, 10V 10V 5V @ 2.5mA 280nC @ 10V 11300pF @ 25V ±30V POWER MOS 8™
PMV170UN,215 MOSFET N-CH 20V 1A TO-236AB NXP USA Inc. TO-236-3, SC-59, SOT-23-3 Surface Mount MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) TO-236AB (SOT23) N-Channel 325mW (Ta), 1.14W (Tc) 20V 1A (Ta) 165mOhm @ 1A, 4.5V 1.8V, 4.5V 1V @ 250µA 1.65nC @ 4.5V 83pF @ 10V ±8V
KSD261CYBU TRANS NPN 20V 0.5A TO92-3 onsemi TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 500mA 20V 500mW Through Hole NPN 150°C (TJ) TO-92-3 400mV @ 50mA, 500mA 100nA (ICBO) 120 @ 100mA, 1V
FDC697P_F077 MOSFET P-CH 20V 8A SSOT-6 onsemi 6-SSOT Flat-lead, SuperSOT™-6 FLMP Surface Mount MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) SuperSOT™-6 FLMP P-Channel 2W (Ta) 20V 8A (Ta) 20mOhm @ 8A, 4.5V 1.8V, 4.5V 1.5V @ 250µA 55nC @ 4.5V 3524pF @ 10V ±8V PowerTrench®
BC558CRL1 SMALL SIGNAL BIPOLAR TRANSISTOR onsemi
KST64MTF TRANS PNP DARL 30V 0.5A SOT23-3 onsemi TO-236-3, SC-59, SOT-23-3 500mA 30V 350mW Surface Mount PNP - Darlington SOT-23-3 1.5V @ 100µA, 100mA 100nA (ICBO) 20000 @ 100mA, 5V 125MHz
KSD1616GBU TRANS NPN 50V 1A TO92-3 onsemi TO-226-3, TO-92-3 (TO-226AA) 1A 50V 750mW Through Hole NPN 150°C (TJ) TO-92-3 300mV @ 50mA, 1A 100nA (ICBO) 200 @ 100mA, 2V 160MHz
NTQD4154ZR2 MOSFET 2N-CH 20V 7.5A 8-TSSOP onsemi 8-TSSOP (0.173", 4.40mm Width) 1.52W Surface Mount -55°C ~ 150°C (TJ) 8-TSSOP 2 N-Channel (Dual) 20V 7.5A Logic Level Gate 19mOhm @ 7.5A, 4.5V 1.5V @ 250µA 21.5nC @ 4.5V 1485pF @ 16V
3SK318YB-TL-E TRANS N-CH CMPAK-4 Renesas Electronics America Inc SC-82A, SOT-343 6V N-Channel Dual Gate CMPAK-4 21dB 1.4dB 3.5V 10mA
BCX68-16E6327 SMALL SIGNAL BIPOLAR TRANSISTOR Rochester Electronics, LLC
SI3457BDV-T1-GE3 MOSFET P-CH 30V 3.7A 6-TSOP Vishay Siliconix SOT-23-6 Thin, TSOT-23-6 Surface Mount MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) 6-TSOP P-Channel 1.14W (Ta) 30V 3.7A (Ta) 54mOhm @ 5A, 10V 4.5V, 10V 3V @ 250µA 19nC @ 10V ±20V TrenchFET®
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