- Manufacturer
- Frequency
-
- Current Rating (Amps)
- Transistor Type
- Operating Temperature
- Supplier Device Package
- Power - Output
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Frequency - Transition
- Gain
- Noise Figure
- Voltage - Test
- Current - Test
- Noise Figure (dB Typ @ f)
- Series
-
- Manufacturer: CEL
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89
- Power - Max: 1.2W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 12V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
- Frequency - Transition: 6.5GHz
- Gain: 12dB
- Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
-
- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: 4-SMD, Flat Leads
- Supplier Device Package: 4-TSFP
- Power - Max: 500mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 4.5V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V
- Frequency - Transition: 42GHz
- Gain: 11dB ~ 21.5dB
- Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
-
- Manufacturer: CEL
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
- Power - Max: 150mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 65mA
- Voltage - Collector Emitter Breakdown (Max): 10V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 7mA, 3V
- Frequency - Transition: 7GHz
- Gain: 9dB
- Noise Figure (dB Typ @ f): 1.4dB @ 1GHz
-
- Manufacturer: Central Semiconductor Corp
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: Die
- Supplier Device Package: Die
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 20V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
- Frequency - Transition: 600MHz
-
- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: PG-SOT343-3D
- Power - Max: 75mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 25mA
- Voltage - Collector Emitter Breakdown (Max): 5V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
- Frequency - Transition: 25GHz
- Gain: 23dB
- Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
-
- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 Short Body
- Supplier Device Package: TO-92S
- Power - Max: 250mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 20mA
- Voltage - Collector Emitter Breakdown (Max): 20V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
- Frequency - Transition: 600MHz
- Gain: 18dB ~ 22dB
- Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz
-
- Manufacturer: onsemi
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: 3-CP
- Power - Max: 200mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 70mA
- Voltage - Collector Emitter Breakdown (Max): 10V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
- Frequency - Transition: 4.5GHz
- Gain: 9.5dB
- Noise Figure (dB Typ @ f): 1.9dB @ 1GHz
-
- Manufacturer: Central Semiconductor Corp
- Mounting Type: Surface Mount
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
- Power - Max: 350mW
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 25V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
- Frequency - Transition: 650MHz
-
- Manufacturer: Intersil
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 16-SOIC
- Power - Max: 150mW
- Transistor Type: 3 NPN + 2 PNP
- Current - Collector (Ic) (Max): 65mA
- Voltage - Collector Emitter Breakdown (Max): 12V, 15V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V / 20 @ 10mA, 2V
- Frequency - Transition: 8GHz, 5.5GHz
- Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
-
- Manufacturer: CEL
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
- Power - Max: 200mW
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 12V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 7mA, 3V
- Frequency - Transition: 4.5GHz
- Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
-
- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: PG-SOT343-4
- Power - Max: 450mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 65mA
- Voltage - Collector Emitter Breakdown (Max): 12V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
- Frequency - Transition: 8GHz
- Gain: 22dB
- Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
-
- Manufacturer: Toshiba Semiconductor and Storage
- Mounting Type: Surface Mount
- Operating Temperature: 125°C (TJ)
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: USQ
- Power - Max: 100mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 80mA
- Voltage - Collector Emitter Breakdown (Max): 12V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
- Frequency - Transition: 7GHz
- Gain: 18dB
- Noise Figure (dB Typ @ f): 1dB @ 500MHz
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