• Manufacturer: Microsemi Corporation
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO
• Power - Max: 2.2W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 200mA
• Voltage - Collector Emitter Breakdown (Max): 16V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 5V
• Frequency - Transition: 870MHz
• Gain: 8dB ~ 9.5dB

• Manufacturer: NXP USA Inc.
• Mounting Type: Surface Mount
• Operating Temperature: 175°C (TJ)
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SC-70
• Power - Max: 270mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 10V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 6V
• Frequency - Transition: 8.5GHz
• Noise Figure (dB Typ @ f): 1.3dB ~ 1.8dB @ 1GHz ~ 2GHz

• Manufacturer: Microsemi Corporation
• Mounting Type: Chassis Mount
• Operating Temperature: 200°C (TJ)
• Package / Case: 55AW-1
• Supplier Device Package: 55AW-1
• Power - Max: 125W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 5A
• Voltage - Collector Emitter Breakdown (Max): 50V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
• Frequency - Transition: 1.2GHz ~ 1.4GHz
• Gain: 7.8dB ~ 8.9dB

• Manufacturer: CEL
• Mounting Type: Surface Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SC-70
• Power - Max: 150mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 65mA
• Voltage - Collector Emitter Breakdown (Max): 10V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 7mA, 3V
• Frequency - Transition: 7GHz
• Gain: 12dB
• Noise Figure (dB Typ @ f): 1.4dB @ 1GHz

• Manufacturer: Rochester Electronics, LLC
• Mounting Type: Surface Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: SC-70, SOT-323
• Supplier Device Package: PG-SOT323-3
• Power - Max: 280mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 35mA
• Voltage - Collector Emitter Breakdown (Max): 20V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
• Frequency - Transition: 800MHz
• Noise Figure (dB Typ @ f): 3dB @ 100MHz

• Manufacturer: Renesas Electronics America Inc
• Mounting Type: Surface Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: SC-82A, SOT-343
• Supplier Device Package: SOT-343
• Power - Max: 200mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 6V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 30mA, 3V
• Frequency - Transition: 12GHz
• Gain: 13dB
• Noise Figure (dB Typ @ f): 1.7dB @ 2GHz

• Manufacturer: Cree/Wolfspeed
• Package / Case: Die
• Supplier Device Package: Die

• Manufacturer: Cree/Wolfspeed
• Package / Case: 440199
• Supplier Device Package: 440199
• Frequency: 3GHz
• Voltage - Rated: 125V
• Power - Output: 218W
• Transistor Type: HEMT
• Gain: 20.1dB
• Current Rating (Amps): 18.7A

• Manufacturer: Renesas Electronics America Inc

• Manufacturer: onsemi
• Mounting Type: Surface Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: SC-70, SOT-323
• Supplier Device Package: 3-MCP
• Power - Max: 400mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 70mA
• Voltage - Collector Emitter Breakdown (Max): 10V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
• Frequency - Transition: 1.5GHz
• Gain: 13dB @ 0.4GHz
• Noise Figure (dB Typ @ f): 1.6dB @ 0.4GHz

• Manufacturer: Renesas Electronics America Inc
• Mounting Type: Surface Mount
• Package / Case: 8-SMD, Flat Lead Exposed Pad
• Supplier Device Package: 8-MINIMOLD
• Power - Max: 410mW
• Transistor Type: 2 NPN (Dual)
• Current - Collector (Ic) (Max): 75mA, 250mA
• Voltage - Collector Emitter Breakdown (Max): 4.5V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 6mA, 3V / 80 @ 20mA, 3V

• Manufacturer: Microsemi Corporation
• Mounting Type: Chassis Mount
• Operating Temperature: 200°C
• Package / Case: 55AW
• Supplier Device Package: 55AW
• Power - Max: 58W
• Current - Collector (Ic) (Max): 3A
• Voltage - Collector Emitter Breakdown (Max): 40V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 160mA, 5V
• Frequency - Transition: 2.3GHz ~ 2.4GHz
• Gain: 7dB

• Manufacturer: STMicroelectronics
• Mounting Type: Chassis, Stud Mount
• Operating Temperature: 200°C (TJ)
• Package / Case: M122
• Supplier Device Package: M122
• Power - Max: 58W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 2.5A
• Voltage - Collector Emitter Breakdown (Max): 16V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
• Gain: 7dB

• Manufacturer: NXP USA Inc.
• Mounting Type: Surface Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: SOT-343F
• Supplier Device Package: 4-DFP
• Power - Max: 136mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 10mA
• Voltage - Collector Emitter Breakdown (Max): 5.5V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 1mA, 2V
• Frequency - Transition: 15GHz
• Gain: 13.5dB ~ 23.5dB
• Noise Figure (dB Typ @ f): 0.9dB ~ 1.7dB @ 1.5GHz ~ 5.8GHz

• Manufacturer: Rochester Electronics, LLC
• Mounting Type: Surface Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: SC-101, SOT-883
• Supplier Device Package: PG-TSLP-3
• Power - Max: 360mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 90mA
• Voltage - Collector Emitter Breakdown (Max): 4.7V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 60mA, 3V
• Frequency - Transition: 37GHz
• Gain: 21dB
• Noise Figure (dB Typ @ f): 0.6dB ~ 1.1dB @ 1.8GHz ~ 6GHz