Semiconductors, Transistors, Transistors - Bipolar (BJT) - RF NTE Electronics, Inc

    • Current Rating (Amps)
    • Transistor Type
    • Operating Temperature
    • Supplier Device Package
    • Power - Output
    • DC Current Gain (hFE) (Min) @ Ic, Vce
    • Frequency - Transition
    • Gain
    • Noise Figure
    • Voltage - Test
    • Current - Test
    • Noise Figure (dB Typ @ f)
    • Series
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List Table
Found: 6
  • 2N5486
    T-JFET N CHANNEL
    NTE Electronics, Inc
    • Manufacturer: NTE Electronics, Inc
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
    • Supplier Device Package: TO-92
    • Frequency: 400MHz
    • Voltage - Rated: 25V
    • Current - Test: 4mA
    • Transistor Type: N-Channel JFET
    • Voltage - Test: 15V
    • Noise Figure: 4dB
    • Current Rating (Amps): 30mA
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  • 2N5485
    T-JFET N CHANNEL
    NTE Electronics, Inc
    • Manufacturer: NTE Electronics, Inc
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
    • Supplier Device Package: TO-92
    • Voltage - Rated: 25V
    • Transistor Type: N-Channel JFET
    • Gain: 20dB
    • Voltage - Test: 15V
    • Noise Figure: 2.5dB
    • Current Rating (Amps): 10mA
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  • 2N3819
    T- JFET N CHANNEL
    NTE Electronics, Inc
    • Manufacturer: NTE Electronics, Inc
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
    • Supplier Device Package: TO-92
    • Voltage - Rated: 25V
    • Transistor Type: N-Channel JFET
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  • MPSH10
    T-NPN SI- VHF OSC
    NTE Electronics, Inc
    • Manufacturer: NTE Electronics, Inc
    • Mounting Type: Through Hole
    • Operating Temperature: -65°C ~ 150°C (TJ)
    • Power - Max: 350mW
    • Transistor Type: NPN
    • Voltage - Collector Emitter Breakdown (Max): 25V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
    • Frequency - Transition: 650MHz
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  • MPSH17
    T-NPN SI- VHF OSC/MXR
    NTE Electronics, Inc
    • Manufacturer: NTE Electronics, Inc
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
    • Supplier Device Package: TO-92-3
    • Power - Max: 350mW
    • Transistor Type: NPN
    • Voltage - Collector Emitter Breakdown (Max): 15V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 5mA, 10V
    • Frequency - Transition: 800MHz
    • Gain: 24dB
    • Noise Figure (dB Typ @ f): 6dB @ 200MHz
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  • MMBT918
    T-NPN SI- VHF
    NTE Electronics, Inc
    • Manufacturer: NTE Electronics, Inc
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: SOT-23-3 (TO-236)
    • Power - Max: 225mW
    • Transistor Type: NPN
    • Current - Collector (Ic) (Max): 50mA
    • Voltage - Collector Emitter Breakdown (Max): 15V
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
    • Frequency - Transition: 600MHz
    • Gain: 15dB
    • Noise Figure (dB Typ @ f): 6dB @ 60MHz
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