- Manufacturer
- Frequency
-
- Current Rating (Amps)
- Transistor Type
- Operating Temperature
- Supplier Device Package
- Power - Output
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Frequency - Transition
- Gain
- Noise Figure
- Voltage - Test
- Current - Test
- Noise Figure (dB Typ @ f)
- Series
-
- Manufacturer: Microsemi Corporation
- Mounting Type: Surface Mount
- Operating Temperature: 200°C
- Package / Case: M150
- Supplier Device Package: M150
- Power - Max: 180W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 30A
- Voltage - Collector Emitter Breakdown (Max): 15V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 14mA, 10V
- Frequency - Transition: 5.5GHz
- Gain: 17dB
- Noise Figure (dB Typ @ f): 2.5dB @ 1GHz
-
- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SOT-723
- Supplier Device Package: PG-TSFP-3
- Power - Max: 210mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 35mA
- Voltage - Collector Emitter Breakdown (Max): 9V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
- Frequency - Transition: 14GHz
- Gain: 15.5dB
- Noise Figure (dB Typ @ f): 1dB @ 1.8GHz
-
- Manufacturer: NXP USA Inc.
- Series: Automotive, AEC-Q101
- Mounting Type: Surface Mount
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23 (TO-236AB)
- Power - Max: 450mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 12V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 8V
- Frequency - Transition: 11GHz
- Gain: 18dB
- Noise Figure (dB Typ @ f): 0.6dB @ 900MHz
-
- Manufacturer: Broadcom Limited
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70-3
- Power - Max: 225mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 12V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Gain: 9dB ~ 15.5dB
- Noise Figure (dB Typ @ f): 1dB ~ 1.9dB @ 900MHz ~ 2.4GHz
-
- Manufacturer: onsemi
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
- Supplier Device Package: TO-92 (TO-226)
- Power - Max: 200W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 12V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
- Frequency - Transition: 2GHz
-
- Manufacturer: Microsemi Corporation
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
- Power - Max: 2.2W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 16V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 5V
- Frequency - Transition: 870MHz
- Gain: 8dB ~ 9.5dB
-
- Manufacturer: NXP USA Inc.
- Mounting Type: Surface Mount
- Operating Temperature: 175°C (TJ)
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70
- Power - Max: 270mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 10V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 6V
- Frequency - Transition: 8.5GHz
- Noise Figure (dB Typ @ f): 1.3dB ~ 1.8dB @ 1GHz ~ 2GHz
-
- Manufacturer: Microsemi Corporation
- Mounting Type: Chassis Mount
- Operating Temperature: 200°C (TJ)
- Package / Case: 55AW-1
- Supplier Device Package: 55AW-1
- Power - Max: 125W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
- Frequency - Transition: 1.2GHz ~ 1.4GHz
- Gain: 7.8dB ~ 8.9dB
-
- Manufacturer: CEL
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70
- Power - Max: 150mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 65mA
- Voltage - Collector Emitter Breakdown (Max): 10V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 7mA, 3V
- Frequency - Transition: 7GHz
- Gain: 12dB
- Noise Figure (dB Typ @ f): 1.4dB @ 1GHz
-
- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323-3
- Power - Max: 280mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 35mA
- Voltage - Collector Emitter Breakdown (Max): 20V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
- Frequency - Transition: 800MHz
- Noise Figure (dB Typ @ f): 3dB @ 100MHz
-
- Manufacturer: Renesas Electronics America Inc
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: SOT-343
- Power - Max: 200mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 6V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 30mA, 3V
- Frequency - Transition: 12GHz
- Gain: 13dB
- Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
-
- Manufacturer: onsemi
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-70, SOT-323
- Supplier Device Package: 3-MCP
- Power - Max: 400mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 70mA
- Voltage - Collector Emitter Breakdown (Max): 10V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
- Frequency - Transition: 1.5GHz
- Gain: 13dB @ 0.4GHz
- Noise Figure (dB Typ @ f): 1.6dB @ 0.4GHz
-
- Manufacturer: Renesas Electronics America Inc
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead Exposed Pad
- Supplier Device Package: 8-MINIMOLD
- Power - Max: 410mW
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 75mA, 250mA
- Voltage - Collector Emitter Breakdown (Max): 4.5V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 6mA, 3V / 80 @ 20mA, 3V
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