Semiconductors, Transistors, Transistors - JFETs max power 100mW package TO-92-3

    • FET Type
    • Drain to Source Voltage (Vdss)
    • Input Capacitance (Ciss) (Max) @ Vds
    • Current - Drain (Idss) @ Vds (Vgs=0)
    • Voltage - Cutoff (VGS off) @ Id
    • Resistance - RDS(On)
    • Series
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List Table
Found: 4
  • KSK30YTA
    JFET N-CH 50V 0.1W TO92
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: 125°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    • Supplier Device Package: TO-92-3
    • FET Type: N-Channel
    • Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 0V
    • Power - Max: 100mW
    • Voltage - Breakdown (V(BR)GSS): 50V
    • Current - Drain (Idss) @ Vds (Vgs=0): 1.2mA @ 10V
    • Voltage - Cutoff (VGS off) @ Id: 400mV @ 100nA
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  • KSK30OBU
    JFET N-CH 50V 0.1W TO92
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: 125°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
    • Supplier Device Package: TO-92-3
    • FET Type: N-Channel
    • Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 0V
    • Power - Max: 100mW
    • Voltage - Breakdown (V(BR)GSS): 50V
    • Current - Drain (Idss) @ Vds (Vgs=0): 600µA @ 10V
    • Voltage - Cutoff (VGS off) @ Id: 400mV @ 100nA
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  • KSK30YBU
    JFET N-CH 50V 0.1W TO92
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: 125°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
    • Supplier Device Package: TO-92-3
    • FET Type: N-Channel
    • Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 0V
    • Power - Max: 100mW
    • Voltage - Breakdown (V(BR)GSS): 50V
    • Current - Drain (Idss) @ Vds (Vgs=0): 1.2mA @ 10V
    • Voltage - Cutoff (VGS off) @ Id: 400mV @ 100nA
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  • KSK30RBU
    JFET N-CH 50V 0.1W TO92
    onsemi
    • Manufacturer: onsemi
    • Mounting Type: Through Hole
    • Operating Temperature: 125°C (TJ)
    • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
    • Supplier Device Package: TO-92-3
    • FET Type: N-Channel
    • Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 0V
    • Power - Max: 100mW
    • Voltage - Breakdown (V(BR)GSS): 50V
    • Current - Drain (Idss) @ Vds (Vgs=0): 300µA @ 10V
    • Voltage - Cutoff (VGS off) @ Id: 400mV @ 100nA
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  • 10
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  • 50
  • 100