Semiconductors, Transistors, Transistors - JFETs max power 350mW package TO-236

    • FET Type
    • Drain to Source Voltage (Vdss)
    • Input Capacitance (Ciss) (Max) @ Vds
    • Current - Drain (Idss) @ Vds (Vgs=0)
    • Voltage - Cutoff (VGS off) @ Id
    • Resistance - RDS(On)
    • Series
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List Table
Found: 2
  • SST174-E3
    JFET N-CH 30V 20MA SOT-23
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: TO-236
    • FET Type: P-Channel
    • Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 0V
    • Power - Max: 350mW
    • Voltage - Breakdown (V(BR)GSS): 30V
    • Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V
    • Voltage - Cutoff (VGS off) @ Id: 5V @ 10nA
    • Resistance - RDS(On): 85 Ohms
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  • SST4119-T1-E3
    JFET N-CH 70V 200UA SOT-23
    Vishay Siliconix
    • Manufacturer: Vishay Siliconix
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 175°C (TJ)
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: TO-236
    • FET Type: N-Channel
    • Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
    • Power - Max: 350mW
    • Voltage - Breakdown (V(BR)GSS): 40V
    • Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 10V
    • Voltage - Cutoff (VGS off) @ Id: 2V @ 1nA
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  • 10
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  • 50
  • 100