• FET Type
    • Drain to Source Voltage (Vdss)
    • Input Capacitance (Ciss) (Max) @ Vds
    • Current - Drain (Idss) @ Vds (Vgs=0)
    • Voltage - Cutoff (VGS off) @ Id
    • Resistance - RDS(On)
    • Series
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List Table
Found: 5
Partnumber Description Manufacturer
Package / Case
Voltage - Breakdown (V(BR)GSS)
Power - Max
Current Drain (Id) - Max
Mounting Type
Operating Temperature
Supplier Device Package
FET Type
Drain to Source Voltage (Vdss)
Input Capacitance (Ciss) (Max) @ Vds
Current - Drain (Idss) @ Vds (Vgs=0)
Voltage - Cutoff (VGS off) @ Id
Series
MQ2N2608 P-CHANNEL J-FET Microchip Technology TO-206AA, TO-18-3 Metal Can 30V 300mW 5 mA Through Hole -65°C ~ 200°C (TJ) TO-18 (TO-206AA) P-Channel 10pF @ 5V 1 mA @ 5 V 6V @ 1µA Military, MIL-PRF-19500/295
2N2609 JFETS Microchip Technology TO-206AA, TO-18-3 Metal Can 30V 300mW 10 mA Through Hole -65°C ~ 200°C (TJ) TO-18 (TO-206AA) P-Channel 10pF @ 5V 2mA @ 5V 750mV @ 1A
2N2608 JFET Microchip Technology TO-206AA, TO-18-3 Metal Can 30V 300mW Through Hole -65°C ~ 200°C (TJ) TO-18 (TO-206AA) P-Channel 10pF @ 5V 1 mA @ 5 V 750mV @ 1µA Military, MIL-PRF-19500/295
MQ2N2609 JFET Microchip Technology TO-206AA, TO-18-3 Metal Can 30V 300mW Through Hole -65°C ~ 200°C (TJ) TO-18 (TO-206AA) P-Channel 30V 10pF @ 5V 2mA @ 5V 750mV @ 1µA
2N2609 JFETS Microsemi Corporation TO-206AA, TO-18-3 Metal Can 30V 300mW Through Hole -65°C ~ 200°C (TJ) TO-18 (TO-206AA) P-Channel 10pF @ 5V 2mA @ 5V 750mV @ 1A
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  • 100