-
- FET Type
- Drain to Source Voltage (Vdss)
- Input Capacitance (Ciss) (Max) @ Vds
- Current - Drain (Idss) @ Vds (Vgs=0)
- Voltage - Cutoff (VGS off) @ Id
- Resistance - RDS(On)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Voltage - Breakdown (V(BR)GSS)
|
Power - Max
|
Current Drain (Id) - Max
|
Mounting Type
|
Operating Temperature
|
Supplier Device Package
|
FET Type
|
Drain to Source Voltage (Vdss)
|
Input Capacitance (Ciss) (Max) @ Vds
|
Current - Drain (Idss) @ Vds (Vgs=0)
|
Voltage - Cutoff (VGS off) @ Id
|
Resistance - RDS(On)
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 2SK3796-3-TL-E | JFET N-CH 10MA 100MW SMCP | onsemi | TO-236-3, SC-59, SOT-23-3 | 100mW | 10 mA | Surface Mount | 150°C (TJ) | SMCP | N-Channel | 30V | 4pF @ 10V | 1.2mA @ 10V | 180mV @ 1µA | 200 Ohms | |
| 2SK3666-4-TB-E | JFET N-CH 30V 0.2W CP | onsemi | TO-236-3, SC-59, SOT-23-3 | 30V | 200mW | 10 mA | Surface Mount | 150°C (TJ) | SMCP | N-Channel | 30V | 4pF @ 10V | 2.5mA @ 10V | 180mV @ 1µA | 200 Ohms |
| 2SK3796-2-TL-E | JFET N-CH 10MA 100MW SMCP | onsemi | TO-236-3, SC-59, SOT-23-3 | 100mW | 10 mA | Surface Mount | 150°C (TJ) | SMCP | N-Channel | 30V | 4pF @ 10V | 600µA @ 10V | 180mV @ 1µA | 200 Ohms | |
| 2SK3666-3-TB-E | JFET N-CH 10MA 200MW 3CP | onsemi | TO-236-3, SC-59, SOT-23-3 | 200mW | 10 mA | Surface Mount | 150°C (TJ) | SMCP | N-Channel | 30V | 4pF @ 10V | 1.2mA @ 10V | 180mV @ 1µA | 200 Ohms | |
| 2SK3796-4-TL-E | JFET N-CH 10MA 100MW SMCP | onsemi | TO-236-3, SC-59, SOT-23-3 | 100mW | 10 mA | Surface Mount | 150°C (TJ) | SMCP | N-Channel | 30V | 4pF @ 10V | 2.5mA @ 10V | 180mV @ 1µA | 200 Ohms |
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