- Power - Max
- Manufacturer
- Voltage - Breakdown (V(BR)GSS)
- Current Drain (Id) - Max
- Supplier Device Package
-
- FET Type
- Drain to Source Voltage (Vdss)
- Input Capacitance (Ciss) (Max) @ Vds
- Current - Drain (Idss) @ Vds (Vgs=0)
- Voltage - Cutoff (VGS off) @ Id
- Resistance - RDS(On)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Voltage - Breakdown (V(BR)GSS)
|
Power - Max
|
Current Drain (Id) - Max
|
Mounting Type
|
Operating Temperature
|
Supplier Device Package
|
FET Type
|
Drain to Source Voltage (Vdss)
|
Input Capacitance (Ciss) (Max) @ Vds
|
Current - Drain (Idss) @ Vds (Vgs=0)
|
Resistance - RDS(On)
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IJW120R100T1FKSA1 | JFET N-CHAN 26A TO247-3 | Infineon Technologies | TO-247-3 | 1.2 V | 190W | 26 A | Through Hole | -55°C ~ 175°C (TJ) | PG-TO247-3 | N-Channel | 1.2V | 1550pF @ 19.5V (VGS) | 1.5µA @ 1.2V | 100 mOhms | CoolSiC™+ |
| IJW120R100T1FKSA1 | POWER FIELD-EFFECT TRANSISTOR | Rochester Electronics, LLC | TO-247-3 | 190W | Through Hole | -55°C ~ 175°C (TJ) | PG-TO247-3 | N-Channel | 1.2V | 1550pF @ 19.5V (VGS) | 1.5µA @ 1.2V | 100 mOhms | |||
| UJ3N065080K3S | 650V 80 MOHM SIC JFET, G3, N-ON, | UnitedSiC | TO-247-3 | 650V | 190W | 32 A | Through Hole | -55°C ~ 175°C (TJ) | TO-247-3 | N-Channel | 650V | 630pF @ 100V | 95 mOhms |
- 10
- 15
- 50
- 100