-
- FET Type
- Drain to Source Voltage (Vdss)
- Input Capacitance (Ciss) (Max) @ Vds
- Current - Drain (Idss) @ Vds (Vgs=0)
- Voltage - Cutoff (VGS off) @ Id
- Resistance - RDS(On)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Voltage - Breakdown (V(BR)GSS)
|
Power - Max
|
Mounting Type
|
Operating Temperature
|
Supplier Device Package
|
FET Type
|
Drain to Source Voltage (Vdss)
|
Input Capacitance (Ciss) (Max) @ Vds
|
Current - Drain (Idss) @ Vds (Vgs=0)
|
Voltage - Cutoff (VGS off) @ Id
|
Resistance - RDS(On)
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| J111,126 | JFET N-CH 40V 400MW TO92-3 | Rochester Electronics, LLC | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 40V | 400mW | Through Hole | 150°C (TJ) | TO-92-3 | N-Channel | 40V | 6pF @ 10V (VGS) | 20mA @ 15V | 10V @ 1µA | 30 Ohms |
| J112,126 | SMALL SIGNAL N-CHANNEL MOSFET | Rochester Electronics, LLC | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 40V | 400mW | Through Hole | 150°C (TJ) | TO-92-3 | N-Channel | 40V | 6pF @ 10V (VGS) | 5mA @ 15V | 1V @ 1µA | 50 Ohms |
- 10
- 15
- 50
- 100