Semiconductors, Transistors, Transistors - IGBTs - Arrays IC(MAX) 117A Pmax 694W

Found: 4
  • IGBT 1200V 117A 694W TO264
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-264-3, TO-264AA
    • Supplier Device Package: TO-264
    • Power - Max: 694W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 117A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Test Condition: 600V, 50A, 4.3Ohm, 15V
    • IGBT Type: NPT
    • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 50A
    • Current - Collector Pulsed (Icm): 200A
    • Switching Energy: 2.14mJ (on), 1.48mJ (off)
    • Gate Charge: 445nC
    • Td (on/off) @ 25°C: 28ns/237ns
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  • IGBT 1200V 117A 694W TO247
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247
    • Power - Max: 694W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 117A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Test Condition: 600V, 50A, 4.3Ohm, 15V
    • IGBT Type: NPT
    • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 50A
    • Current - Collector Pulsed (Icm): 200A
    • Switching Energy: 2.14mJ (on), 1.48mJ (off)
    • Gate Charge: 445nC
    • Td (on/off) @ 25°C: 28ns/237ns
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  • IGBT 1200V 117A 694W TO247
    Microchip Technology
    • Manufacturer: Microchip Technology
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247
    • Power - Max: 694W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 117A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Test Condition: 600V, 50A, 4.3Ohm, 15V
    • IGBT Type: NPT
    • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 50A
    • Current - Collector Pulsed (Icm): 200A
    • Switching Energy: 2.14mJ (on), 1.48mJ (off)
    • Gate Charge: 445nC
    • Td (on/off) @ 25°C: 28ns/237ns
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  • IGBT 1200V 117A 694W TO264
    Microsemi Corporation
    • Manufacturer: Microsemi Corporation
    • Mounting Type: Through Hole
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: TO-264-3, TO-264AA
    • Supplier Device Package: TO-264
    • Power - Max: 694W
    • Input Type: Standard
    • Current - Collector (Ic) (Max): 117A
    • Voltage - Collector Emitter Breakdown (Max): 1200V
    • Test Condition: 600V, 50A, 4.3Ohm, 15V
    • IGBT Type: NPT
    • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 50A
    • Current - Collector Pulsed (Icm): 200A
    • Switching Energy: 2.14mJ (on), 1.48mJ (off)
    • Gate Charge: 445nC
    • Td (on/off) @ 25°C: 28ns/237ns
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