Semiconductors, Transistors, Transistors - IGBTs - Arrays IC(MAX) 110A Pmax 625W

    • Supplier Device Package
    • Input Type
    • IGBT Type
    • Current - Collector Cutoff (Max)
    • Vce(on) (Max) @ Vge, Ic
    • Input Capacitance (Cies) @ Vce
    • Input
    • Test Condition
    • Current - Collector Pulsed (Icm)
    • Reverse Recovery Time (trr)
    • NTC Thermistor
    • Switching Energy
    • Gate Charge
    • Td (on/off) @ 25°C
    • Series
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List Table
Found: 1
  • BSM75GB170DN2HOSA1
    IGBT MOD 1700V 110A 625W
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Chassis Mount
    • Operating Temperature: 150°C (TJ)
    • Package / Case: Module
    • Supplier Device Package: Module
    • Configuration: Half Bridge
    • Power - Max: 625W
    • Current - Collector (Ic) (Max): 110A
    • Voltage - Collector Emitter Breakdown (Max): 1700V
    • Input: Standard
    • Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 75A
    • Input Capacitance (Cies) @ Vce: 11nF @ 25V
    • NTC Thermistor: No
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